| Literature DB >> 29972298 |
Yasuyuki Kusaka1, Naoki Shirakawa1, Shintaro Ogura1, Jaakko Leppäniemi2, Asko Sneck2, Ari Alastalo2, Hirobumi Ushijima1, Nobuko Fukuda1.
Abstract
The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoO x and a plasma-protecting layer of ZrO x situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.Entities:
Keywords: Printing; hydrogen plasma; metal complex; metal oxide; solution process; transistor
Year: 2018 PMID: 29972298 DOI: 10.1021/acsami.8b07465
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN: 1944-8244 Impact factor: 9.229