Literature DB >> 29972298

Reverse Offset Printing of Semidried Metal Acetylacetonate Layers and Its Application to a Solution-Processed IGZO TFT Fabrication.

Yasuyuki Kusaka1, Naoki Shirakawa1, Shintaro Ogura1, Jaakko Leppäniemi2, Asko Sneck2, Ari Alastalo2, Hirobumi Ushijima1, Nobuko Fukuda1.   

Abstract

The submicrometer resolution printing of various metal acetylacetonate complex inks including Fe, V, Mn, Co, Ni, Zn, Zr, Mo, and In was enabled by a robust ink formulation scheme which adopted a ternary solvent system where solubility, surface wettability, and drying as well as absorption behavior on a polydimethylsiloxane sheet were optimized. Hydrogen plasma in heated conditions resulted in bombarded, resistive, or conductive state depending on the temperature and the metal species. With a conductivity-bestowed layer of MoO x and a plasma-protecting layer of ZrO x situated on the top of an IGZO layer, a solution-processed TFT exhibiting an average mobility of 0.17 cm2/(V s) is demonstrated.

Entities:  

Keywords:  Printing; hydrogen plasma; metal complex; metal oxide; solution process; transistor

Year:  2018        PMID: 29972298     DOI: 10.1021/acsami.8b07465

Source DB:  PubMed          Journal:  ACS Appl Mater Interfaces        ISSN: 1944-8244            Impact factor:   9.229


  1 in total

1.  Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel.

Authors:  Liuhui Lei; Yuanyuan Tan; Xing Yuan; Wei Dou; Jiale Zhang; Yongkang Wang; Sizhe Zeng; Shenyi Deng; Haoting Guo; Weichang Zhou; Dongsheng Tang
Journal:  RSC Adv       Date:  2021-05-18       Impact factor: 3.361

  1 in total

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