| Literature DB >> 29968708 |
Jessica Lindlau1, Malte Selig2,3, Andre Neumann1, Léo Colombier1, Jonathan Förste1, Victor Funk1, Michael Förg1, Jonghwan Kim4, Gunnar Berghäuser2, Takashi Taniguchi5, Kenji Watanabe5, Feng Wang4, Ermin Malic2, Alexander Högele6.
Abstract
Monolayer transition metal dichalcogenides (TMDs) undergo substantial changes in the single-particle band structure and excitonic optical response upon the addition of just one layer. As opposed to the single-layer limit, the bandgap of bilayer (BL) TMD semiconductors is indirect which results in reduced photoluminescence with richly structured spectra that have eluded a detailed understanding to date. Here, we provide a closed interpretation of cryogenic emission from BL WSe2 as a representative material for the wider class of TMD semiconductors. By combining theoretical calculations with comprehensive spectroscopy experiments, we identify the crucial role of momentum-indirect excitons for the understanding of BL TMD emission. Our results shed light on the origin of quantum dot formation in BL crystals and will facilitate further advances directed at opto-electronic applications of layered TMD semiconductors in van der Waals heterostructures and devices.Entities:
Year: 2018 PMID: 29968708 PMCID: PMC6030057 DOI: 10.1038/s41467-018-04877-3
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Photoluminescence spectroscopy of bilayer WSe2. a Optical micrograph of a WSe2 flake exfoliated onto Si/SiO2 with monolayer (ML) and bilayer (BL) regions indicated by the arrows (scale bar, 15 μm). b Cryogenic raster-scan photoluminescence map of the upper corner indicated by the dashed square in a. False-color plot of the photoluminescence maxima in the spectral range of 1.43–1.59 eV. The bilayer exhibits extended and punctual regions of brightening attributed to strain at local folds. c Normalized photoluminescence spectrum (brown, magnified by a factor of 20 in the range of 1.62–1.82 eV) at a representative bilayer position away from defects with model fit shown as red solid line. The energy positions of momentum-bright (X and D) and momentum-dark BL excitons (Q↑Γ, Q↑K, K↓Γ, , K↑Γ, and , labeled by the capital letters of electron and empty state valleys and the electron out-of-plane spin as subscript) are indicated by dashed lines. All spectroscopy measurements were performed at 4.2 K with excitation at 1.95 eV
Fig. 2Excitons in bilayer WSe2. a Schematic single-particle band diagram of the conduction and the valence bands of bilayer WSe2 along high-symmetry lines of the hexagonal Brillouin zone shown on the right. Zero-momentum spin-bright (X) and spin-dark (D) excitons are formed in the K valley by electrons from spin-up and spin-down conduction sub-bands indicated in black and gray, respectively, paired with a spin-up valence band empty state. Momentum-indirect excitons with electrons and unoccupied states in dissimilar valleys are indicated by dashed ellipses. b Calculated dispersions of lowest-energy exciton manifolds in bilayer WSe2 with energy minima given in eV with respect to the bright exciton X
Fig. 3Effects of strain and localization on the photoluminescence of bilayer WSe2. a Photoluminescence from a strained bilayer region without (red) and with (orange) spectrally narrow and intense quantum dot (QD) emission recorded at a factor of 1000 lower-excitation power. The bilayer spectrum away from strained regions (brown) is shown for reference. Note the strain-induced emergence of the shoulder at 1.615 eV labeled as Q↑K. Inset: typical second-order coherence of a single quantum dot with pronounced antibunching on ~10 ns timescale. b Distribution of quantum dot intensities as a function of their peak emission energies (filled circles, extracted from the map of Fig. 1b), and photoluminescence excitation spectra of the quantum dot and strained bilayer emission in a (orange and red open circles, respectively). The dashed lines mark the energy positions of the relevant exciton states
Fig. 4Field-effect control of bilayer WSe2 photoluminescence. a Normalized photoluminescence (brown) of a bilayer WSe2 encapsulated in hexagonal boron nitride and tuned toward charge neutrality with positive gate voltages. Best fit to the spectrum (red) was obtained with the same set of excitons energies as in Fig. 1c and an overall redshift of 2 meV. b Evolution of the photoluminescence with gate voltage from −30 to 30 V. Note the cross-over to the charged regime below −20 V signified by a simultaneous redshift of 22 meV for all peaks as indicated by the red arrows below the dashed line
Fig. 5Quantum dots in bilayer WSe2. a False-color plot of quantum dot magneto-luminescence under σ+ (σ−) polarized excitation for positive (negative) magnetic fields in Faraday geometry. b The quantum dot emission doublet (upper panel) is characterized by linearly polarized peaks with orthogonal polarization axes (lower panel; note the anti-correlation in the intensities of the higher- and lower-energy peaks shown in red and blue together with squared sine and cosine fits). c Energy dispersion of the doublet splitting Δ in magnetic field. Best fit to the data with a hyperbolic function (solid line) was obtained for a zero-field fine-structure splitting Δ0 of 500 μeV and an exciton g-factor of 9.5. d Distribution of exciton g-factors around the mean value of 9.5 plotted for ten quantum dots with respect to their zero-field splitting