| Literature DB >> 29861996 |
Jiajun Xie1, Ke Shi1, Kang Cai1, Di Zhang1, Jie-Yu Wang1, Jian Pei1, Dahui Zhao1.
Abstract
A novel hetero-polycyclic aromatic compound manifesting strong near-infrared (NIR) absorption as well as high-performance n-type semiconducting properties is developed. With an exceptionally low LUMO level at -4.7 eV, this NIR dye (λmax ≈ 1100 nm, ε ≈ 105 mol-1 L cm-1) exhibits adequate stability under ambient conditions, with electron mobility up to 0.96 cm2 V-1 s-1 measured in solution-processed organic field-effect transistors. A special metal-free C-C coupling serves as a pivotal step in constructing the polycyclic π-framework of this low-bandgap chromophore, by fusing an electron-deficient naphthalenediimide moiety with an electron-donating naphthalenediamine. Such a rare combination of extraordinary optical and semiconductive attributes is quite valuable for organic small molecules, and promising for unique applications in the opto-electronic field.Entities:
Year: 2015 PMID: 29861996 PMCID: PMC5952312 DOI: 10.1039/c5sc03045e
Source DB: PubMed Journal: Chem Sci ISSN: 2041-6520 Impact factor: 9.825
Scheme 1Synthetic route.
Scheme 2Proposed reaction pathways to 1 and 5.
Fig. 1(a) UV-vis-NIR absorption spectra (at 1.0 × 10–5 M in CHCl3); (b) cyclic voltammograms of 1–3 recorded in CHCl3.
Optical and electronic properties
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|
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| LUMO | HOMO [eV] | LUMO–HOMO |
| |
| 1 | 1000 | 1.2 × 105 | 1043 | –4.35 | –5.27 | 0.92 | 1.09 |
| 2 | 1101 | 1.4 × 105 | 1133 | –4.72 | –5.30 | 0.58 | 0.99 |
| 3 | 1004 | 4.7 × 103 | — | –4.66 | –5.80 | — | 1.14 |
Absorption maxima of the S0 → S1 transition in CHCl3 solution.
Molar extinction coefficient at λabs.
Emission maxima in CHCl3.
Data from CV.
Optical bandgap from the absorption onset.
Calculated from the optical bandgap and LUMO in CV.
Fig. 2DFT calculated geometry (side view) and HOMO/LUMO (top view) of 1 and 2 (alkyl side groups are replaced by methyl in the calculations).
Fig. 3(a) Transfer (VDS = 100 V) and (b) output profiles of 2 (annealed at 220 °C) in OFET (μe = 0.96 cm2 V–1 s–1).
Fig. 4AFM height images of thin films of 2 upon thermal annealing at (a) 100 °C, (b) 180 °C and (c) 220 °C.
Fig. 5XRD profiles of thin films of 2 after thermal annealing at varied temperatures.