| Literature DB >> 29673207 |
Thomas A Welsh1, Audrey Laventure2, Gregory C Welch3.
Abstract
Herein we report on the synthesis of an N-annulated perylene diimide (Entities:
Keywords: bulk heterojunction solar cells; direct heteroarylation; non-fullerene acceptors; organic dyes; perylene diimide; thieno[3,4-c]pyrrole-4,6-dione
Mesh:
Substances:
Year: 2018 PMID: 29673207 PMCID: PMC6017723 DOI: 10.3390/molecules23040931
Source DB: PubMed Journal: Molecules ISSN: 1420-3049 Impact factor: 4.411
Figure 1PDI-substituted non-fullerene acceptors previously reported and presented in this work.
Figure 2Reaction scheme for the synthesis of compounds 1 and 2. (i) Toluene, 120 °C, Cs2CO3, pivalic acid, Pd(Herrmann-Beller), and P(o-anisyl)3; (ii) DMA, 80 °C, Cs2CO3, pivalic acid, and SiliaCat® DPP-Pd; and iii) toluene, 120 °C, Cs2CO3, pivalic acid, and SiliaCat® DPP-Pd.
Reaction results for conditions i, ii, and iii with octTPD and ehTPD. (i) Toluene, 120 °C, Cs2CO3, pivalic acid, and Pd(Herrmann-Beller, and P(o-anisyl)3; (ii) DMA, 80 °C, Cs2CO3, pivalic acid, and SiliaCat® DPP-Pd; and (iii) toluene, 120 °C, Cs2CO3, pivalic acid, and SiliaCat® DPP-Pd.
| TPD R Group | Conditions | Yield (%) 1 |
|---|---|---|
| octyl | i | 49 |
| octyl | ii | 0 |
| octyl | iii | 46 |
| ethylhexyl | i | 56 |
| ethylhexyl | ii | 0 |
| ethylhexyl | iii | 0 |
1 Yields were ~50% due to product lost during the purification process. See the Materials and Methods section.
Figure 3(a) Compounds 1 and 2; (b) cyclic voltammograms (with ferrocene internal standard) with onset potentials and E1/2 potentials shown; (c) solution and thin film absorption and emission profiles with λmax and intercept between absorption and emission profiles, λint, shown. Emission spectra were recorded with excitation at 530 nm.
Summary of experimental optoelectronic properties of compounds 1 and 2.
| Property | Compound 1 | Compound 2 |
|---|---|---|
| EOx Onset (V) | 1.08 | 1.08 |
| E1/2 Ox (V) | 1.17 | 1.17 |
| ERed Onset (V) | −1.13 | −1.12 |
| E1/2 Red (V) | −1.23, −1.49 | −1.21, −1.48 |
| IP (eV) 1 | 5.88 | 5.88 |
| EA (eV) 1 | 3.67 | 3.68 |
| Eelec (eV) | 2.21 | 2.20 |
| Solution λabs (nm) | 530 | 530 |
| Solution λem (nm) | 581 | 582 |
| Solution Eopt (eV) 2 | 2.24 | 2.23 |
| Solution Stokes Shift (eV) 3 | 0.21 | 0.21 |
| Thin Film λabs (nm) | 538 | 538 |
| Thin Film λem (nm) | 634 | 637 |
| Thin Film Eopt (eV) 2 | 2.09 | 2.11 |
| Thin Film Stokes Shift (eV) 3 | 0.35 | 0.36 |
1 Energies were calculated by (Onset V + 4.8) where Fc HOMO = 4.8 eV [47]. 2 Optical band gaps were calculated from the intercept of absorption and emission profiles where (Eλint = h × c/λint; h = Planck’s Constant, c = speed of light). 3 Stokes Shifts were calculated by (Eλabs – Eλems) where (Eλmax = h × c/λmax).
Figure 4(a) Optimized geometry of 1 with methyl groups substituted for alkyl chains; (b) calculated electronic energy levels and energy gap for 1; (c) calculated optical absorption profile for 1. Calculations were done on Gaussian16 [61], input files and results were visualized using GausView05 [62]. All alkyl chains were replaced with a methyl group. The B3LYP [51,52,53] level of theory with 6-31G(d,p) [54,55,56,57,58,59] basis set were used for the calculations. TD-SCF [60] calculations were performed from the optimized geometry. The single point calculation was performed on this structure in order to generate molecular orbitals and electrostatic potential maps.
Figure 5Optical absorption profiles of 1 with (a) thermal annealing; (b) o-DCB solvent vapour annealing; (c) DPE solvent additive. POM images of (d) 150 °C TA film; (e) 15 min o-DCB SVA film; and (f) 3% v/v DPE additive film under normal (top) and cross-polarized light (bottom). Images were taken at 20× magnification.
Figure 6Absorption profiles of 50:50 PBDB-T/1 blend with (a) TA; (b) o-DCB SVA; (c) DPE solvent additive. POM images of (d) 150 °C TA film; (e) 15 min o-DCB SVA film; and (f) 3% v/v DPE additive film under normal (top) and cross-polarized light (bottom). Images were taken at 20× magnification.
Figure 7(a) PBDB-T donor polymer PBDB-T and (PDI)2octTPD (1) acceptor; (b) thin film absorption profiles; (c) device architecture; (d) electronic energy levels.
Optimized organic solar cell data for 50:50 PBDB-T/1 blends 1.
| Parameters | VOC (V) Avg. (Best) | Jsc (mA/cm2) Avg. (Best) | FF (%) Avg. (Best) | PCE (%) Avg. (Best) |
|---|---|---|---|---|
| As Cast | 1.06 (1.07) | 4.66 (4.84) | 34.66 (35.15) | 1.71 (1.81) |
| TA 150 °C 5 min | 1.07 (1.07) | 4.91 (5.04) | 37.14 (38.59) | 1.96 (2.09) |
| SVA | 1.03 (1.03) | 3.92 (4.00) | 36.33 (36.52) | 1.46 (1.50) |
| DPE 3% | 1.04 (1.05) | 7.02 (7.40) | 42.85 (42.37) | 3.14 (3.28) |
1 Device architecture: ITO/ZnO/BHJ/MoOx/Ag. Active layers were spin cast at 1500 rpm from 10 mg/mL solutions in o-DCB.
Figure 8(a) JV curves for best devices; (b) thin film absorption profiles for 50:50 PBDB-T/1 blends; (c) thin film emission profiles for pure PBDB-T and 50:50 PBDB-T/1 blends. Plots are for devices as cast, TA at 150 °C for 5 min, SVA from o-DCB for 15 min, and with a DPE 3% (v/v) additive.
Figure 9Atomic force microscopy (AFM) images for OSC devices with PBDB-T/1 (50:50) active layers measured “as cast,” thermally annealed (TA) at 150 °C for 5 min, solvent vapor annealed (SVA) from o-DCB for 15 min, and processed with a diphenylether (DPE) 3% (v/v) additive.