| Literature DB >> 29662955 |
Shigeki Kawai1, Soichiro Nakatsuka2, Takuji Hatakeyama2, Rémy Pawlak3, Tobias Meier3, John Tracey4, Ernst Meyer3, Adam S Foster4,5,6.
Abstract
Substituting heteroatoms into nanostructuredEntities:
Year: 2018 PMID: 29662955 PMCID: PMC5898832 DOI: 10.1126/sciadv.aar7181
Source DB: PubMed Journal: Sci Adv ISSN: 2375-2548 Impact factor: 14.136
Fig. 1Synthesis of multiple heteroatom-substituted GNR.
(A) Schematic drawing of 5-(10-chloroanthracen-9-yl)-10-(10-iodoanthracen-9-yl)-5,10-dihydrodibenzo[b,e][1,4]azaborinine. (B) On-surface reaction paths of long- and (C) short-periodicity boron-nitrogen GNRs (BN-GNR). Gray and purple triangles indicate boron- and nitrogen-centered membered rings, respectively. (D) STM topography of the synthesized BN-GNR on Au(111). (E and F) Corresponding AFM images. Measurement parameters: Vtip = −200 mV and I = 0.8 pA in (D). Vtip = 0 mV and A = 60 pm in (E) and (F).
Fig. 2AFM results of BN-GNR.
(A) Simulated atomic structure from above (left) and to the side (right), with carbon atoms shown in cyan, gold in yellow, boron in blue, nitrogen in green, and hydrogen in white. (B) Simulated AFM images at decreasing tip height. (C to J) Series of high-resolution AFM images taken at different Z distances. (K) Force spectroscopic measurements taken at different elements in the BN-GNR. (L) Close view. (M) Calculated frequency change (Δf) over labeled atomic sites as a function of tip-surface distance (note that this is referenced to the fixed part of the tip, and the effective distance is about 4.0 Å smaller once the CO molecule is included). Measurement parameters: Vtip = 0 mV and A = 60 pm.
Fig. 3Apparent bond analysis.
(A) Analysis of the bond lengths in the AFM image. (B) Calculated valence electron density (at an isocontour of 1.0 eÅ−3).
Summary of apparent bond lengths.
| C1–C2 | 142 | 142 | 145 |
| C3–N | 196 | 196 | 142 |
| B–C4 | 135 | 130 | 138 |
Fig. 4Electronic structure of BN-GNR.
(A) STM topography and (B) the corresponding AFM image. STS taken at the center in (C) and the edge in (D). CBE, conduction band edge. Six different positions were measured as labeled in (A). (E to L) Series of constant height dI/dV maps measured with a lock-in amplifier (root mean square amplitude = 14 mV and frequency = 512 Hz) at the different bias voltages. Arrows indicate the positions of the STS measurements. (M) Simulated STM topographies at a bias of −1.0 V (left) and +1.5 V (right). (N) Calculated DOS.