| Literature DB >> 29572485 |
Sinheui Kim1, Hye Jin Bae2, Sangho Park2, Wook Kim3, Joonghyuk Kim2, Jong Soo Kim2, Yongsik Jung2, Soohwan Sul2, Soo-Ghang Ihn4, Changho Noh2, Sunghan Kim5, Youngmin You6.
Abstract
Degradation of organic materials is responsible for tEntities:
Year: 2018 PMID: 29572485 PMCID: PMC5865184 DOI: 10.1038/s41467-018-03602-4
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1Exciton-induced generation of polaron pairs. Electronic processes for the charge-neutral, exciton-mediated generation of radical ion pairs within an emitting layer consisting of a host and a dopant. Direct formation of a dopant exciton (e.g., dopant*) is not included, because intermolecular electron transfer between a host and a dopant exciton is usually forbidden due to negative driving forces
Fig. 2Prediction of the formation of radical ion pairs. a Chemical structures of the blue-phosphorescent dopants (Ir1−Ir4) and the host molecule (H). b Cyclic voltammograms of the Ir dopants. Conditions: a standard three-electrode cell assembly consisting of a Pt disc working electrode, a Pt wire counter electrode, and an Ag/AgNO3 pseudo reference electrode were employed. Solutions of 2.0 mM compounds in THF were deaerated prior to taking the measurements. c Photoluminescence spectra of 10 μM Ir dopant solutions (THF, deaerated). Photoexcitation wavelengths used were 341 nm (for Ir1), 340 nm (for Ir2), 396 nm (for Ir3), and 400 nm (for Ir4). d Comparison of the electrochemical potentials of the host and dopants involved in reductive quenching of the host exciton. e Comparison of the electrochemical potentials of the host and dopants involved in charge recombination within a pair of the radical anion of the host and the radical cation of the dopant
Photophysical and electrochemical data for the Ir dopant and H host materials
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| PLQYc |
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|
|
| ||
|---|---|---|---|---|---|---|---|
| Ir1 | 467 | 2.7 | 0.13 | 0.81 ( | -h | −1.85 | NDi |
| Ir2 | 467 | 2.0 | 0.25 | 0.82 ( | -h | −1.84 | NDi |
| Ir3 | 460 | 3.8 | 0.28 | 1.12 ( | -h | −1.59 | NDi |
| Ir4 | 474 | 2.3 | 0.50 | 1.10 ( | -h | −1.63 | NDi |
| H | 400 | 0.0075 | NDi | 1.50 ( | −1.82 ( | −1.60 | 1.28 |
r reversible, ir irreversible
a 10 μM in deaerated THF, 298 K
b Photoluminescence lifetimes determined employing time-correlated single-photon-counting techniques, after picosecond pulsed laser excitation at 377 nm. The measurements were taken for deaerated THF solutions containing 50 μM Ir dopant or 50 μM H host
c Photoluminescence quantum yields of the Ir dopants measured for mCBP films (50 nm) molecularly dispersed with 5 wt % Ir
d Oxidation potentials
e Reduction potentials. Cyclic (scan rate = 100 mV s−1), differential pulse (scan rate = 4 mV s−1) and second harmonic alternating current (scan rate = 25 mV s−1) voltammetry experiments were performed to determine the potentials. The electrochemical measurements were taken for deaerated THF solutions of 2.0 mM Ir or 2.0 mM H employing a three-electrode cell assembly consisting of a Pt disc working electrode, a Pt wire counter electrode, and an Ag/AgNO3 pseudo reference electrode
f Excited-state oxidation potentials
g Excited-state reduction potentials
h Not observed before solvent breakdown
i Not determined
Fig. 3Formation of radical ion pairs. a Photoluminescence spectra of 100 μM H with added Ir3 (0–60 μM). Photoexcitation wavelength used was 300 nm. The inset figure is a Stern–Volmer analysis of the fluorescence of H in the absence (I0) and presence (I) of Ir3. The value of the intensity of the host fluorescence was corrected by considering the absorbance of the dopant, following the relationship I = Iobs × (Abs/Abs0) × 1/(1 − 10−) where Iobs, Abs, and Abs0 are the observed fluorescence intensity, the absorbance at 300 nm in the presence of Ir3, and the absorbance at 300 nm in the absence of Ir3, respectively. The I0/I values were fit to the Stern–Volmer equation I0/I = (1 + Ka·[Ir3]) × (1 + kq·τ0·[Ir3]). In this equation, Ka, kq, τ0, and [Ir3] are the association constant, the quenching constant, the fluorescence lifetime in the absence of Ir3 (3.8 ns), and the molar concentration of Ir3, respectively. The Stern–Volmer analysis yielded kq and Ka to be >1012 M−1 s−1 and 6.8 × 103 M−1, respectively. The non-negligible contribution of the static quenching (i.e., the (1 + Ka·[Ir3]) term in the Stern–Volmer equation) may indicate the existence of excited-state interactions between H and Ir3. Stern–Volmer analyses for other Ir dopants are shown in Supplementary Fig. 2. b Phosphorescence intensities of 10, 20, 30, 40, 50, and 60 μM Ir3 (deaerated THF) upon photoexcitation at 300 nm in the absence (gray bars) and presence (black bars) of equimolar concentrations of H. The decrease in the difference between the gray and black bars corresponded to the formation of radical ion pairs. c Photoinduced EPR spectra of Ar-saturated THF solutions of 1.0 mM H, 1.0 mM Ir3, and a mixture of 1.0 mM H and 1.0 mM Ir3 in the absence and presence of photoirradiation. Peaks marked with asterisks may correspond to the rhombic signals due to an Ir(IV) species of the radical cation of Ir3
Fig. 4Annihilation of radical ion pairs. a Transient absorption spectra of a THF solution containing 150 μM Ir3 and 3.0 mM H after nanosecond pulsed photoexcitation. The negative and positive absorbance were due to the emission of Ir3 and the generation of Ir3•+, respectively. b Comparisons of the simulated (TD−B3LYP) electronic transition spectra of the radical anion of H (magenta curve) and the radical cation of Ir3 (blue curve) with the transient absorption spectra obtained at delay times of 0.2 μs (black triangles) and 16.4 μs (empty circles), and the absorption spectrum of Ir3 obtained during oxidative electrolysis at 1.30 V vs. SCE (black curve). c Decay traces (top panel) and a second-order plot (bottom panel) of the transient absorption signals observed at a wavelength of 1100 nm. d Plot of the rate constant for back electron transfer for charge recombination (kBeT, black squares) as a function of the driving force and the Marcus plots for outer-sphere electron transfer calculated for the reorganization energies (λ) at 1.7 eV (magenta), 1.9 eV (orange), 2.2 eV (turquoise), and 2.3 eV (blue). The Marcus plots were constructed from the equation, kBeT = Z exp[−(ΔGBeT + λ)2/4λkBT]. In this equation, Z, kB, and T are the collisional frequency taken as 1.0 × 1012 M−1 s−1, the Boltzmann constant, and absolute temperature (298 K), respectively
Fig. 5Degradation of radical ion pairs. a UV–vis absorption difference spectra of a deaerated THF solution containing 3.0 mM H and 100 μM Ir4 during continuous photoirradiation using a 300 W Xenon lamp for 10 min. b UV–vis absorption difference spectra of a vacuum evaporated thin film of H molecularly doped with 15 wt % Ir4 during continuous photoirradiation using a 300 W Xenon lamp for 10 min. c UV–vis absorption difference spectra of a spincoated poly(methyl methacrylate) film molecularly doped with 15 wt % Ir4 during continuous photoirradiation using a 300 W Xenon lamp for 10 min. d Evolution of liquid chromatograms taken for the THF solution containing 3.0 mM H and 100 μM Ir4 during the continuous photoirradiation using a 300 W Xenon lamp for 10 min. e Comparison of the liquid chromatograms of the THF solution of 3.0 mM H and 100 μM Ir4 before (black) and after (magenta) the photoirradiation (10 min). The peaks marked with asterisks were byproducts and subjected to mass analyses. f Electrospray mass spectrum (positive mode) of the photolyzed THF solution containing 3.0 mM H and 100 μM Ir4. The inset structures correspond to the observed m/z values (a.m.u.). The inset graph shows a comparison of the isotopic distribution of the peak at m/z 827.39 (black bars) with theoretical values calculated for the structure shown on the left (magenta bars). g Electrospray mass spectrum (positive mode) of an oxidatively electrolyzed THF solution of 2.0 mM Ir4. The inset structures correspond to the observed m/z values (a.m.u.)
Fig. 6Device performance. a Schematic diagram of the configuration of the electroluminescence devices tested, including the energy levels of their component materials. b Electroluminescence spectra. c Current density–voltage curves. d External quantum efficiencies as a function of luminance. e Luminance decays during operation of the devices in a constant current driving mode. f Correlation between the operation lifetime (LT70) of the devices and the rate constant for back electron transfer (kBeT)