| Literature DB >> 29379022 |
Ada Onwubiko1, Wan Yue2,3, Cameron Jellett4, Mingfei Xiao5, Hung-Yang Chen4, Mahesh Kumar Ravva6, David A Hanifi7, Astrid-Caroline Knall4, Balaji Purushothaman6, Mark Nikolka5, Jean-Charles Flores8, Alberto Salleo7, Jean-Luc Bredas6, Henning Sirringhaus5, Pascal Hayoz8, Iain McCulloch9,10.
Abstract
Conventional semiconducting polymer synthesis typically involves transition metal-mediated coupling reactions that link aromatic units with single bonds along the backbone. Rotation around these bonds contributes to conformational and energetic disorder and therefore potentially limits charge delocalisation, whereas the use of transition metals presents difficulties for sustainability and application in biological environments. Here we show that a simple aldol condensation reaction can prepare polymers where double bonds lock-in a rigid backbone conformation, thus eliminating free rotation along the conjugated backbone. This polymerisation route requires neither organometallic monomers nor transition metal catalysts and offers a reliable design strategy to facilitate delocalisation of frontier molecular orbitals, elimination of energetic disorder arising from rotational torsion and allowing closer interchain electronic coupling. These characteristics are desirable for high charge carrier mobilities. Our polymers with a high electron affinity display long wavelength NIR absorption with air stable electron transport in solution processed organic thin film transistors.Entities:
Year: 2018 PMID: 29379022 PMCID: PMC5789062 DOI: 10.1038/s41467-018-02852-6
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Fig. 1The generic scheme for the preparation of rigid polymers synthesised via aldol polymerisation. The polymers are made from bis-isatin and bis-oxindole monomers. The aldol condensation polymers reported here are P1, P2, P3, P4 and P5. The polymer repeat units are described as PP for phenyl homopolymer, NN for naphthalene homopolymer and TN for thieno[3,2-b]thiophene and naphthalene copolymer. R is a solubilising alkyl chain
Fig. 2Synthesis of phenyl bis-isatin, phenyl bis-oxindole, naphthalene bis-oxindole and naphthalene bis-isatin monomers. The letter R represents different solubilising alkyl chains used in the synthesis of each monomer as outlined in Supplementary Methods
Fig. 3Synthesis of thieno[3,2-b]thiophene bis-isatin monomer. The monomer was synthesised in five steps from dimethyl thieno[3,2-b]thiophene-3,6-dicarboxylate. This synthesis makes use of a Curtius rearrangement reaction to introduce a Boc protected amine to avoid a thieno[3,2-b]thiophene-3,6-diamine intermediate due to their instability
Polymer molecular weight, ionisation energies, electron affinities, optical properties and thin film transistor mobilities
| Polymer | IPa (eV) | EAb (eV) | |||||
|---|---|---|---|---|---|---|---|
| P1 | 14 | 19 | 5.4 | 4.4 | 850 | 1.01 | 10−5 |
| P2 | 58 | 131 | 5.6 | 4.5 | 900 | 1.10 | − |
| P3 | 214 | 677 | 5.3 | 4.2 | 927 | 1.07 | 0.0012 |
| P4 | 134 | 538 | 5.2 | 4.2 | 927 | 1.01 | 0.03 |
| P5 | 8.3 | 9.0 | 5.0 | 4.2 | 1128 | 0.84 | 0.001 |
a IP measured by photoelectron spectroscopy in air (PESA)
b EA is crudely estimated by addition of the UV-Vis absorption onset to IP (EA = IP−Eopt), a procedure that neglects the exciton binding energy
c Thin films were spin-cast on glass substrates from chlorobenzene solution, λ is the peak of the first low energy absorption band of the polymers
d Estimated optical gap was calculated using onset of the thin-film absorption spectra (Eopt = 1240/λonset)
Fig. 4Thin film UV-Vis-NIR absorption spectra and DFT conformational analysis of the polymers. The films were spun from chlorobenzene solutions. P1 and P2 have an all-phenyl core structure (PP), P3 and P4 have an all-naphthalene core and P5 has a thieno[3,2-b]thiophene−naphthalene structure (TN). The molecular geometries were optimised at the ωB97XD/6-31g(d,p) level of theory. The optimal dihedral angles (in degrees) between adjacent aromatic units are shown in blue; the inter-unit double bonds (also highlighted in blue) are 1.37 Å long
Fig. 5Transistor properties of P4 and N2200. Transistor transfer curves of (a) p(NDI2OD-T2)[41] (N2200) and (b) P4 highlighting the air stability of n-charge transport of P4 in comparison to the state of the art p(NDI2OD-T2)
Fig. 6Grazing-incidence wide angle scattering of P4. a P4 as cast gives a representative 2D-GIWAXS pattern of some edge-on texture. b A horizontal 1D linecut of P4 as cast showing the strong layered ordering (100), (200) and the (010) respectively