| Literature DB >> 29303305 |
D J Groenendijk1, C Autieri2, J Girovsky1, M Carmen Martinez-Velarte1, N Manca1, G Mattoni1, A M R V L Monteiro1, N Gauquelin3, J Verbeeck3, A F Otte1, M Gabay4, S Picozzi2, A D Caviglia1.
Abstract
We investigate the thickness-dependent electronic properties of ultrathin SrIrO_{3} and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO_{3} is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO_{3} requires antiferromagnetic order.Entities:
Year: 2017 PMID: 29303305 DOI: 10.1103/PhysRevLett.119.256403
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161