Literature DB >> 29255292

A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9.

Jun Yoneda1,2, Kenta Takeda3,4, Tomohiro Otsuka3,4,5, Takashi Nakajima3,4, Matthieu R Delbecq3,4, Giles Allison3, Takumu Honda6, Tetsuo Kodera6, Shunri Oda6, Yusuke Hoshi7, Noritaka Usami8, Kohei M Itoh9, Seigo Tarucha10,11.   

Abstract

The isolation of qubits from noise sources, such as surrounding nuclear spins and spin-electric susceptibility 1-4 , has enabled extensions of quantum coherence times in recent pivotal advances towards the concrete implementation of spin-based quantum computation. In fact, the possibility of achieving enhanced quantum coherence has been substantially doubted for nanostructures due to the characteristic high degree of background charge fluctuations 5-7 . Still, a sizeable spin-electric coupling will be needed in realistic multiple-qubit systems to address single-spin and spin-spin manipulations 8-10 . Here, we realize a single-electron spin qubit with an isotopically enriched phase coherence time (20 μs) 11,12 and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge noise-rather than conventional magnetic noise-as highlighted by a 1/f spectrum extended over seven decades of frequency. The qubit exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average, offering a promising route to large-scale spin-qubit systems with fault-tolerant controllability.

Year:  2017        PMID: 29255292     DOI: 10.1038/s41565-017-0014-x

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  43 in total

1.  Autotuning of double dot devices in situ with machine learning.

Authors:  Justyna P Zwolak; Thomas McJunkin; Sandesh S Kalantre; J P Dodson; E R MacQuarrie; D E Savage; M G Lagally; S N Coppersmith; Mark A Eriksson; Jacob M Taylor
Journal:  Phys Rev Appl       Date:  2020       Impact factor: 4.985

2.  A compact, ultra-high vacuum ion source for isotopically enriching and depositing 28Si thin films.

Authors:  K Tang; H S Kim; A N R Ramanayaka; D S Simons; J M Pomeroy
Journal:  Rev Sci Instrum       Date:  2019-08       Impact factor: 1.523

3.  A programmable two-qubit quantum processor in silicon.

Authors:  T F Watson; S G J Philips; E Kawakami; D R Ward; P Scarlino; M Veldhorst; D E Savage; M G Lagally; Mark Friesen; S N Coppersmith; M A Eriksson; L M K Vandersypen
Journal:  Nature       Date:  2018-02-14       Impact factor: 49.962

4.  A coherent spin-photon interface in silicon.

Authors:  X Mi; M Benito; S Putz; D M Zajac; J M Taylor; Guido Burkard; J R Petta
Journal:  Nature       Date:  2018-02-14       Impact factor: 49.962

5.  Coherent spin-state transfer via Heisenberg exchange.

Authors:  Yadav P Kandel; Haifeng Qiao; Saeed Fallahi; Geoffrey C Gardner; Michael J Manfra; John M Nichol
Journal:  Nature       Date:  2019-09-25       Impact factor: 69.504

6.  A four-qubit germanium quantum processor.

Authors:  Nico W Hendrickx; William I L Lawrie; Maximilian Russ; Floor van Riggelen; Sander L de Snoo; Raymond N Schouten; Amir Sammak; Giordano Scappucci; Menno Veldhorst
Journal:  Nature       Date:  2021-03-24       Impact factor: 69.504

7.  Fast universal quantum gate above the fault-tolerance threshold in silicon.

Authors:  Akito Noiri; Kenta Takeda; Takashi Nakajima; Takashi Kobayashi; Amir Sammak; Giordano Scappucci; Seigo Tarucha
Journal:  Nature       Date:  2022-01-19       Impact factor: 69.504

8.  Coherent spin qubit transport in silicon.

Authors:  J Yoneda; W Huang; M Feng; C H Yang; K W Chan; T Tanttu; W Gilbert; R C C Leon; F E Hudson; K M Itoh; A Morello; S D Bartlett; A Laucht; A Saraiva; A S Dzurak
Journal:  Nat Commun       Date:  2021-07-05       Impact factor: 14.919

9.  Conditional teleportation of quantum-dot spin states.

Authors:  Haifeng Qiao; Yadav P Kandel; Sreenath K Manikandan; Andrew N Jordan; Saeed Fallahi; Geoffrey C Gardner; Michael J Manfra; John M Nichol
Journal:  Nat Commun       Date:  2020-06-15       Impact factor: 14.919

10.  Tunable diameter and spacing of double Ge quantum dots using highly-controllable spacers and selective oxidation of SiGe.

Authors:  Tsung-Lin Huang; Kang-Ping Peng; Ching-Lun Chen; Horng-Chih Lin; Tom George; Pei-Wen Li
Journal:  Sci Rep       Date:  2019-08-05       Impact factor: 4.379

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