| Literature DB >> 29129936 |
Eunseong Moon1, David Blaauw1, Jamie D Phillips1.
Abstract
The design and characterization of mm-scale GaAs photovoltaic cells are presented and demonstrate highly efficient energy harvesting in the near infrared. Device performance is improved dramatically by optimization of the device structure for the near-infrared spectral region and improving surface and sidewall passivation with ammonium sulfide treatment and subsequent silicon nitride deposition. The power conversion efficiency of a 6.4 mm2 cell under 660 nW/mm2 NIR illumination at 850 nm is greater than 30 %, which is higher than commercial crystalline silicon solar cells under similar illumination conditions. Critical performance limiting factors of sub-mm scale GaAs photovoltaic cells are addressed and compared to theoretical calculations.Entities:
Keywords: gallium arsenide; photovoltaics; silicon; wireless energy harvesting
Year: 2017 PMID: 29129936 PMCID: PMC5679131 DOI: 10.1109/TED.2017.2746094
Source DB: PubMed Journal: IEEE Trans Electron Devices ISSN: 0018-9383 Impact factor: 2.917