Literature DB >> 28949587

Threshold Dynamics of a Semiconductor Single Atom Maser.

Y-Y Liu1, J Stehlik1, C Eichler1, X Mi1, T R Hartke1, M J Gullans2, J M Taylor2, J R Petta1.   

Abstract

We demonstrate a single atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high-quality-factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account.

Year:  2017        PMID: 28949587     DOI: 10.1103/PhysRevLett.119.097702

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  1 in total

1.  Microwave-Assisted Tunneling in Hard-Wall InAs/InP Nanowire Quantum Dots.

Authors:  Samuele Cornia; Francesco Rossella; Valeria Demontis; Valentina Zannier; Fabio Beltram; Lucia Sorba; Marco Affronte; Alberto Ghirri
Journal:  Sci Rep       Date:  2019-12-20       Impact factor: 4.379

  1 in total

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