Literature DB >> 28915006

Chemical and Electronic Repair Mechanism of Defects in MoS2 Monolayers.

Anja Förster1,2,3, Sibylle Gemming2,4,5, Gotthard Seifert2,3,6, David Tománek1.   

Abstract

Using ab initio density functional theory calculations, we characterize changes in the electronic structure of MoS2 monolayers introduced by missing or additional adsorbed sulfur atoms. We furthermore identify the chemical and electronic function of substances that have been reported to reduce the adverse effect of sulfur vacancies in quenching photoluminescence and reducing electronic conductance. We find that thiol-group-containing molecules adsorbed at vacancy sites may reinsert missing sulfur atoms. In the presence of additional adsorbed sulfur atoms, thiols may form disulfides on the MoS2 surface to mitigate the adverse effect of defects.

Entities:  

Keywords:  2D materials; ab initio calculations; defects; electronic structure; transition metal dichalcogenides

Year:  2017        PMID: 28915006     DOI: 10.1021/acsnano.7b04162

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  3 in total

Review 1.  Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications.

Authors:  Balakrishnan Kirubasankar; Yo Seob Won; Laud Anim Adofo; Soo Ho Choi; Soo Min Kim; Ki Kang Kim
Journal:  Chem Sci       Date:  2022-05-18       Impact factor: 9.969

2.  Two-Step Growth of Uniform Monolayer MoS2 Nanosheets by Metal-Organic Chemical Vapor Deposition.

Authors:  Sayema Chowdhury; Anupam Roy; Chison Liu; Md Hasibul Alam; Rudresh Ghosh; Harry Chou; Deji Akinwande; Sanjay K Banerjee
Journal:  ACS Omega       Date:  2021-04-06

3.  Defect Engineering of Two-Dimensional Molybdenum Disulfide.

Authors:  Xin Chen; Peter Denninger; Tanja Stimpel-Lindner; Erdmann Spiecker; Georg S Duesberg; Claudia Backes; Kathrin C Knirsch; Andreas Hirsch
Journal:  Chemistry       Date:  2020-04-21       Impact factor: 5.236

  3 in total

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