Literature DB >> 28850121

Valleytronics: Magnetization without polarization.

Hongyi Yu1, Wang Yao1.   

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Year:  2017        PMID： 28850121     DOI： 10.1038/nmat4979

Source DB:  PubMed          Journal:  Nat Mater        ISSN： 1476-1122            Impact factor:   43.841


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  6 in total

1.  Electrical control of the valley Hall effect in bilayer MoS2 transistors.

Authors:  Jieun Lee; Kin Fai Mak; Jie Shan
Journal:  Nat Nanotechnol       Date:  2016-01-25       Impact factor: 39.213

2.  Valley-contrasting physics in graphene: magnetic moment and topological transport.

Authors:  Di Xiao; Wang Yao; Qian Niu
Journal:  Phys Rev Lett       Date:  2007-12-07       Impact factor: 9.161

3.  Berry phase, hyperorbits, and the Hofstadter spectrum: Semiclassical dynamics in magnetic Bloch bands.

Authors: 
Journal:  Phys Rev B Condens Matter       Date:  1996-03-15

4.  Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides.

Authors:  Di Xiao; Gui-Bin Liu; Wanxiang Feng; Xiaodong Xu; Wang Yao
Journal:  Phys Rev Lett       Date:  2012-05-07       Impact factor: 9.161

5.  Valley magnetoelectricity in single-layer MoS2.

Authors:  Jieun Lee; Zefang Wang; Hongchao Xie; Kin Fai Mak; Jie Shan
Journal:  Nat Mater       Date:  2017-07-10       Impact factor: 43.841

6.  Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics.

Authors:  Ding Zhong; Kyle L Seyler; Xiayu Linpeng; Ran Cheng; Nikhil Sivadas; Bevin Huang; Emma Schmidgall; Takashi Taniguchi; Kenji Watanabe; Michael A McGuire; Wang Yao; Di Xiao; Kai-Mei C Fu; Xiaodong Xu
Journal:  Sci Adv       Date:  2017-05-31       Impact factor: 14.136
  6 in total
  1 in total

1.  Conduction band-edge valley splitting in two-dimensional ferroelectric AgBiP2S6 by magnetic doping: towards electron valley-polarized transport.

Authors:  Dongxue Zhang; Baozeng Zhou
Journal:  RSC Adv       Date:  2022-05-06       Impact factor: 4.036
  1 in total

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