| Literature DB >> 28788667 |
Francisco López-Huerta1, Blanca Cervantes2,3, Octavio González4,5, Julián Hernández-Torres6, Leandro García-González7, Rosario Vega8, Agustín L Herrera-May9, Enrique Soto10.
Abstract
We present the study of the biocompatibility and surface properties of titanium dioxide (TiO₂) thin films deposited by direct current magnetron sputtering. These films are deposited on a quartz substrate at room temperature and annealed with different temperatures (100, 300, 500, 800 and 1100 °C). The biocompatibility of the TiO₂ thin films is analyzed using primary cultures of dorsal root ganglion (DRG) of Wistar rats, whose neurons are incubated on the TiO₂ thin films and on a control substrate during 18 to 24 h. These neurons are activated by electrical stimuli and its ionic currents and action potential activity recorded. Through X-ray diffraction (XRD), the surface of TiO₂ thin films showed a good quality, homogeneity and roughness. The XRD results showed the anatase to rutile phase transition in TiO₂ thin films at temperatures between 500 and 1100 °C. This phase had a grain size from 15 to 38 nm, which allowed a suitable structural and crystal phase stability of the TiO₂ thin films for low and high temperature. The biocompatibility experiments of these films indicated that they were appropriated for culture of living neurons which displayed normal electrical behavior.Entities:
Keywords: TiO2; biocompatibility; direct current magnetron sputtering; dorsal root ganglion neurons; thin film
Year: 2014 PMID: 28788667 PMCID: PMC5455933 DOI: 10.3390/ma7064105
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Figure 1X-ray diffraction patterns for films annealed at different temperatures.
Average values of the crystalline grain size of anatase and rutile phase TiO2 films annealed at different temperatures.
| Heat Treatment (°C) | Crystalline Size (nm) | |
|---|---|---|
| Anatase TiO2 | Rutile TiO2 | |
| 500 | 15.9 | – |
| 800 | 20.8 | 37.5 |
| 1100 | – | 32.7 |
Figure 2Representative membrane ionic currents and membrane voltage response of DRG neurons cultured in control substrate and TiO2 thin films surfaces. (A,C,E) ionic currents generated with an 800 ms pulse (from −110 to +40 mV) followed by 200 ms test pulses to 0 mV (VH = −60 mV). Neurons grown on control glass surface and those grown on TiO2 films annealed at 100 and 800 °C showed similar set of currents with an initial rapid inward current followed by a slowly inactivating outward current; (B,D,F) representative voltage responses to current pulse injection (100, 400 and 300 pA, and Vm = −60 mV) of DRG neurons cultured in control substrate and TiO2 thin films annealed at 100 and 800 °C. Recordings of the voltage response of neurons to a current pulse showed typical action potential discharge showing the functionality of the neurons growth in control and TiO2 films.
Inward and outward current density in DRG neurons cultured in the control substrate and TiO2 thin films surfaces prepared at room temperature and annealed at temperatures between 100 and 1100 °C.
| Current Density | Control ( | TiO2 Room Temperature ( | TiO2 100 °C ( | TiO2 300 °C ( | TiO2 500 °C ( | TiO2 800 °C ( | TiO2 1100 °C ( |
|---|---|---|---|---|---|---|---|
| pA/pF inward current | −813 ± 195 | −218 ± 98 * | −462 ± 208 | −276 ± 126* | −375 ± 178 | −715 ± 126 | −164 ± 62 * |
| pA/pF outward current | 670 ± 121 | 285 ± 53 * | 362 ± 79 | 396 ± 103 | 555 ± 103 | 758 ± 107 | 298 ± 54 * |
Mean ± standard error, * p < 0.05.
Figure 3Inward and outward current density of the DRG neurons cultured in control substrate and TiO2 thin films. (A) Average inward current density as a function of voltage; (B) Average outward current density as a function of voltage.
Figure 4Representative action potential recordings of the DRG neurons on control substrate and TiO2 thin films annealed at 1100 °C. (A) Action potential produced by a 100 pA depolarizing current pulse; (B) Phase-plane plot of the action potential shown in panel A. 1—AHP, 2—threshold, 3—maximum depolarization rate, 4—maximum repolarization rate; (C) Action potential caused by 100 pA depolarizing current pulse in a neuron cultured on the TiO2 film; (D) Phase-plane plot for the action potential shown in panel C. 1—AHP, 2—threshold, 3—maximum depolarization rate, 4—maximum repolarization rate.
Properties of action potentials of DRG neurons grown on control substrate and TiO2 thin film.
| Action Potential Parameters | Control ( | TiO2 Room Temperature ( | TiO2 100 °C ( | TiO2 300 °C ( | TiO2 500 °C ( | TiO2 800 °C ( | TiO2 1100 °C ( |
|---|---|---|---|---|---|---|---|
| Resting membrane potential | −60 ± 0.5 | −62 ± 2 | −62 ± 1 | −60 ± 0.4 | −61 ± 2 | −60 ± 0.2 | −60 ± 1 |
| Amplitude of the action potential (mV) | 109 ± 7 | 106 ± 8 | 113 ± 8 | 109 ± 5 | 104 ± 3 | 108 ± 9 | 95 ± 10 |
| Duration 50% (ms) | 1.2 ± 0.3 | 1.3 ± 0.3 | 0.81 ± 0.1 | 1.2 ± 0.2 | 2.3 ± 0.6 | 0.84 ± 0.1 | 1.1 ± 0.3 |
| Maximum depolarization rate (mV/ms) | 318 ± 42 | 236 ± 53 | 334 ± 59 | 253 ± 50 | 181 ± 39 * | 311 ± 62 | 209 ± 66 |
| Maximum repolarization rate (mV/ms) | −118 ± 23 | −94 ± 17 | −170 ± 17 | −145 ± 21 | −91 ± 37 | −164 ± 23 | −155 ± 40 |
| Threshold (mV) | −36 ± 2 | −34 ± 4 | −24 ± 4 * | −30 ± 4 | −23 ± 4 * | −34 ± 2 | −32 ± 4 |
| Amplitude of the AHP (mV) | −10 ± 2 | −6 ± 2 | −8.5 ± 1 | −9 ± 1 | −9 ± 2 | −9 ± 0.4 | −10 ±0.5 |
Mean ± standard error, * p < 0.05.
Figure 5The parameters used in the deposition of TiO2 thin films were: pressure 5.6 × 10−6 Torr, Ar flow 15 sccm, time 60 min, power 100 W and substrate temperature 25 °C.
Composition of standard solutions (in mM).
| Solution | NaCl | KCl | CaCl2 | MgCl2 | HEPES | EGTA * |
|---|---|---|---|---|---|---|
| External | 140 | 5.4 | 1.8 | 1.2 | 10 | – |
| Internal | 10 | 135 | 0.134 | 5 | 5 | 10 |
EGTA *—ethylene glycol tetraacetic acid.