| Literature DB >> 28788423 |
Ivan Litzov1, Christoph J Brabec2,3.
Abstract
Solution-processed inverted bulk heterojunction (BHJ) solar cells have gained much more attention during the last decade, because of their significantly better environmental stability compared to the normal architecture BHJ solar cells. Transparent metal oxides (MeOx) play an important role as the dominant class for solution-processed interface materials in this development, due to their excellent optical transparency, their relatively high electrical conductivity and their tunable work function. This article reviews the advantages and disadvantages of the most common synthesis methods used for the wet chemical preparation of the most relevant n-type- and p-type-like MeOx interface materials consisting of binary compounds AxBy. Their performance for applications as electron transport/extraction layers (ETL/EEL) and as hole transport/extraction layers (HTL/HEL) in inverted BHJ solar cells will be reviewed and discussed.Entities:
Keywords: device stability; inverted structure; metal oxide interfaces; sol-gel methods
Year: 2013 PMID: 28788423 PMCID: PMC5452745 DOI: 10.3390/ma6125796
Source DB: PubMed Journal: Materials (Basel) ISSN: 1996-1944 Impact factor: 3.623
Figure 1Various sol-gel options to control the final morphology of the different product.
Scheme 1Thermal decomposition of metal alkoxide(carboxylate) precursors.
Scheme 2Reaction of different types of alcohols with halides.
Scheme 3Aprotic condensation reactions.
Scheme 4Formation of Zn-O-Zn bridge bonds and precipitation of ZnO via oxolation reaction.
Scheme 5Reaction between TiCl4 and benzyl alcohol: (a) alkyl halide elimination; and (b) ether elimination.
Figure 2(a) Schematic device structure of the conventional polymer solar cell; and (b) schematic device structure of the inverted polymer solar cell. SC (Semiconductor); BHJ (inverted bulk heterojunction); PEDOT:PSS (polyethylene dioxythiophene:polystyrene sulfonate); ITO (indium tin oxide); WF (work function).
Device parameters of i-BHJ solar cells with different electron transport/extraction interlayers. EEL, electron extraction layer; ETL, electron transport layer; VOC, open-circuit voltage; JSC, short-circuit current density; FF, fill factor; NP, nanoparticle.
| Reference (N°) | EEL/ETL | FF% | PCE% | ||
|---|---|---|---|---|---|
| [ | ZnO NP | 0.62 | 11.17 | 54.3 | 3.78 |
| [ | ZnO NP | 0.56 | 8.33 | 56.5 | 2.62 |
| [ | ZnO NP | 0.56 | 8.36 | 53.9 | 2.56 |
| [ | s(ZnO) | 0.55 | 9.23 | 51.8 | 2.65 |
| [ | s(ZnO) | 0.55 | 8.86 | 45.5 | 2.21 |
| [ | s(AZO) | 0.57 | 9.57 | 47.7 | 2.59 |
| [ | s(AZO) | 0.57 | 8.36 | 50.8 | 2.42 |
| [ | TiO2∙NP | 0.57 | 8.38 | 54.4 | 2.58 |
| [ | s(EA-TiO | 0.56 | 6.70 | 55.0 | 2.06 |
| [ | s(DEA-TiO | 0.55 | 5.31 | 36.0 | 1.06 |
| [ | s(AA-TiO | 0.55 | 7.00 | 60.0 | 2.31 |
| [ | sTiO2 | 0.55 | 9.06 | 51.9 | 2.61 |
Device parameters of i-BHJ solar cells with different hole transport/extraction interlayers. HEL, hole extraction layer; HTL, hole transport layer.
| Reference (N°) | HEL/HTL | FF% | PCE% | ||
|---|---|---|---|---|---|
| [ | V2O5 NP | 0.56 | 10.4 | 66.0 | 3.80 |
| [ | sV2O5 | 0.52 | 9.50 | 60.0 | 3.00 |
| [ | sVO | 0.57 | 10.1 | 67.0 | 3.90 |
| [ | eMoO3 | 0.55 | 8.86 | 45.5 | 2.21 |
| [ | eMoO3 | 0.88 | 10.4 | 68.8 | 6.08 |
| [ | sMoO3 | 0.57 | 7.96 | 66.7 | 2.92 |
| [ | sWO3 | 0.62 | 8.63 | 63.0 | 3.37 |
| [ | sWO3 | 0.53 | 8.56 | 52.6 | 2.68 |
| [ | sWO3 | 0.54 | 8.50 | 51.3 | 2.40 |