| Literature DB >> 28613812 |
Benoit Gobaut1, Pasquale Orgiani2, Alessia Sambri3,4, Emiliano di Gennaro3,4, Carmela Aruta3,4, Francesco Borgatti5, Valerio Lollobrigida6, Denis Céolin7, Jean-Pascal Rueff7,8, Regina Ciancio6, Chiara Bigi6,9, Pranab Kumar Das6,10, Jun Fujii6, Damjan Krizmancic6, Piero Torelli6, Ivana Vobornik6, Giorgio Rossi6,9, Fabio Miletto Granozio3,4, Umberto Scotti di Uccio3,4, Giancarlo Panaccione6.
Abstract
We report the study of anatase TiO2(001)-oriented thin films grown by pulsed laser deposition on LaAlO3(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti3+-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti3+ electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti3+ only in a well-defined range of deposition pressure; outside this range, Ti3+ and the strength of the in-gap states are reduced.Entities:
Keywords: anatase; defects; in-gap state; interdiffusion; oxygen vacancies; resonant photoemission; shear planes
Year: 2017 PMID： 28613812 DOI： 10.1021/acsami.7b03181
Source DB: PubMed Journal: ACS Appl Mater Interfaces ISSN： 1944-8244 Impact factor: 9.229