| Literature DB >> 28508059 |
Junzhang Ma1, Changjiang Yi1, Baiqing Lv1, ZhiJun Wang2, Simin Nie1, Le Wang1, Lingyuan Kong1, Yaobo Huang3, Pierre Richard1,4,5, Peng Zhang6, Koichiro Yaji6, Kenta Kuroda6, Shik Shin6, Hongming Weng1,4, Bogdan Andrei Bernevig2, Youguo Shi1, Tian Qian1,4, Hong Ding1,4,5.
Abstract
Topological insulators (TIs) host novel states of quantum matter characterized by nontrivial conducting boundary states connecting valence and conduction bulk bands. All TIs discovered experimentally so far rely on either time-reversal or mirror crystal symmorphic symmetry to protect massless Dirac-like boundary states. Several materials were recently proposed to be TIs with nonsymmorphic symmetry, where a glide mirror protects exotic surface fermions with hourglass-shaped dispersion. However, an experimental confirmation of this new fermion is missing. Using angle-resolved photoemission spectroscopy, we provide experimental evidence of hourglass fermions on the (010) surface of crystalline KHgSb, whereas the (001) surface has no boundary state, in agreement with first-principles calculations. Our study will stimulate further research activities of topological properties of nonsymmorphic materials.Entities:
Keywords: Hourglass fermion; nonsymmorphic materials; topological insulator
Year: 2017 PMID: 28508059 PMCID: PMC5419706 DOI: 10.1126/sciadv.1602415
Source DB: PubMed Journal: Sci Adv ISSN: 2375-2548 Impact factor: 14.136
Fig. 1Hourglass fermions predicted in KHgSb with nonsymmorphic spatial symmetry.
(A) Schematic surface state bands for materials with symmorphic and nonsymmorphic spatial symmetries. Panels (i) and (ii) present topologically trivial and nontrivial cases with symmorphic spatial symmetry, respectively. Panels (iii) and (iv) are the same as (i) and (ii), respectively, but with nonsymmorphic spatial symmetry showing hourglass-shaped surface band dispersion. (B) Crystal structure of double-layered KHgSb with space group P63/mmc (no. 194). The yellow plane indicates the glide mirror plane preserved on the (010) side surface. The arrows and coordinates indicate the operation of the glide reflection . (C) Three-dimensional (3D) bulk BZ of KHgSb as well as its projected (001) and (010) surface BZs. (D and E) Projections of calculated bulk and surface bands on the (001) and (010) surfaces of KHgSb, respectively. The calculations show hourglass-shaped surface bands along the glide-symmetric line on the (010) surface. The complex-conjugate eigenvalues are paired as ±i pairs at and +1 (or −1) pairs at . (F) Logarithmic plot of XRD data measured on the (001) plane of KHgSb single crystal. The peaks marked by stars are from the Sb flux. Inset: LEED pattern shows the hexagonal structure of the (001) surface. arb.u., arbitrary units. (G) Core-level photoemission spectrum showing characteristic peaks of K 3p, Hg 5d, and Sb 4d core levels.
Fig. 2Electronic structure on the KHgSb (001) surface.
(A) 3D intensity plot of ARPES spectra showing the electronic structure of valence bands in the k-k plane. (B) ARPES intensity plot along after in situ K doping, showing the bottom of the conduction bands. (C) ARPES intensity plot showing band dispersions along on the pristine (001) surface. The dashed curves represent the calculated bulk bands at k = 0. Because generalized gradient approximation (GGA) calculations usually underestimate the bandgap of semiconductors, we rigidly shifted the calculated conduction bands upward to have a 0.46-eV bandgap, which is the value determined experimentally in (B). For clarity, the chemical potential of the calculated band structure is chosen to have the best match with the measured valence band dispersions. (D) Corresponding curvature intensity plot of (C).
Fig. 3Band dispersions along on the KHgSb (010) surface.
(A) ARPES intensity plot at EF recorded along by varying the photon energy from 20 to 100 eV on the (010) surface, which maps the k-k plane at k = 0 of the 3D bulk BZ. The overlaid hexagons indicate the BZ structure in the k-k plane. (B and C) Band dispersions along cuts 1 and 2 indicated in (A), recorded with photon energy hv = 22 and 56 eV, respectively. The solid curves represent the calculated bulk bands along Γ − M. Note that the chemical potential on the (010) surface is slightly different from that on the (001) surface, most likely because of different surface chemistry effects. (D) Band dispersions along k at different k positions recorded with different photon energies from 22 to 56 eV. The dashed curve indicates the dispersion of one representative bulk band along Γ − K − M. (E) Calculated bulk bands along Γ − K − M. The red curves indicate the calculated bulk bands that correspond to the experimental band dispersion indicated in (D). (F) Near-EF band dispersions along k at different k positions recorded with different photon energies from 56 to 78 eV, showing a Dirac-like surface state band along . The momentum locations are indicated in (A).
Fig. 4Electronic structure of surface states on the KHgSb (010) surface.
(A to C) Calculated surface band dispersions along , , and , respectively. (D) 3D sketch of the band structure of hourglass fermions along high-symmetry lines. (E and G) ARPES intensity plots showing band dispersions along and , respectively. (F and H) Corresponding curvature intensity plots of momentum distribution curves of (E) and (G), respectively. (I and J) ARPES intensity plot and corresponding curvature intensity plot along , respectively. (K) FS intensity map recorded at hv = 70 eV. (L) Summary of the experimental results recorded on the (001) and (010) surfaces. Top: Curvature intensity plot of the band dispersions along on the (001) surface. Bottom: Surface band structure along on the (010) surface. The symbols represent the extracted bands from the experimental data in (E) to (J). Middle: 3D bulk BZ of KHgSb and its projected (001) and (010) surface BZs.