Literature DB >> 23005658

Prediction of weak topological insulators in layered semiconductors.

Binghai Yan1, Lukas Müchler, Claudia Felser.   

Abstract

We report the discovery of weak topological insulators by ab initio calculations in a honeycomb lattice. We propose a structure with an odd number of layers in the primitive unit cell as a prerequisite for forming weak topological insulators. Here, the single-layered KHgSb is the most suitable candidate for its large bulk energy gap of 0.24 eV. Its side surface hosts metallic surface states, forming two anisotropic Dirac cones. Although the stacking of even-layered structures leads to trivial insulators, the structures can host a quantum spin Hall layer with a large bulk gap, if an additional single layer exists as a stacking fault in the crystal. The reported honeycomb compounds can serve as prototypes to aid in the finding of new weak topological insulators in layered small-gap semiconductors.

Entities:  

Year:  2012        PMID: 23005658     DOI: 10.1103/PhysRevLett.109.116406

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  10 in total

1.  Topological insulators: Quasi-1D topological insulators.

Authors:  Huaqing Huang; Wenhui Duan
Journal:  Nat Mater       Date:  2016-02       Impact factor: 43.841

2.  A weak topological insulator state in quasi-one-dimensional bismuth iodide.

Authors:  Ryo Noguchi; T Takahashi; K Kuroda; M Ochi; T Shirasawa; M Sakano; C Bareille; M Nakayama; M D Watson; K Yaji; A Harasawa; H Iwasawa; P Dudin; T K Kim; M Hoesch; V Kandyba; A Giampietri; A Barinov; S Shin; R Arita; T Sasagawa; Takeshi Kondo
Journal:  Nature       Date:  2019-02-11       Impact factor: 49.962

3.  A novel quasi-one-dimensional topological insulator in bismuth iodide β-Bi4I4.

Authors:  Gabriel Autès; Anna Isaeva; Luca Moreschini; Jens C Johannsen; Andrea Pisoni; Ryo Mori; Wentao Zhang; Taisia G Filatova; Alexey N Kuznetsov; László Forró; Wouter Van den Broek; Yeongkwan Kim; Keun Su Kim; Alessandra Lanzara; Jonathan D Denlinger; Eli Rotenberg; Aaron Bostwick; Marco Grioni; Oleg V Yazyev
Journal:  Nat Mater       Date:  2015-12-14       Impact factor: 43.841

4.  Superlattice valley engineering for designer topological insulators.

Authors:  Xiao Li; Fan Zhang; Qian Niu; Ji Feng
Journal:  Sci Rep       Date:  2014-09-30       Impact factor: 4.379

5.  Mirror-symmetry protected non-TRIM surface state in the weak topological insulator Bi2TeI.

Authors:  I P Rusinov; T V Menshchikova; A Isaeva; S V Eremeev; Yu M Koroteev; M G Vergniory; P M Echenique; E V Chulkov
Journal:  Sci Rep       Date:  2016-02-11       Impact factor: 4.379

6.  Engineering Dirac electrons emergent on the surface of a topological insulator.

Authors:  Yukinori Yoshimura; Koji Kobayashi; Tomi Ohtsuki; Ken-Ichiro Imura
Journal:  Sci Technol Adv Mater       Date:  2015-01-16       Impact factor: 8.090

7.  Experimental evidence of hourglass fermion in the candidate nonsymmorphic topological insulator KHgSb.

Authors:  Junzhang Ma; Changjiang Yi; Baiqing Lv; ZhiJun Wang; Simin Nie; Le Wang; Lingyuan Kong; Yaobo Huang; Pierre Richard; Peng Zhang; Koichiro Yaji; Kenta Kuroda; Shik Shin; Hongming Weng; Bogdan Andrei Bernevig; Youguo Shi; Tian Qian; Hong Ding
Journal:  Sci Adv       Date:  2017-05-05       Impact factor: 14.136

8.  Driving a GaAs film to a large-gap topological insulator by tensile strain.

Authors:  Mingwen Zhao; Xin Chen; Linyang Li; Xiaoming Zhang
Journal:  Sci Rep       Date:  2015-02-13       Impact factor: 4.379

9.  Quasi one dimensional Dirac electrons on the surface of Ru₂Sn₃.

Authors:  Q D Gibson; D Evtushinsky; A N Yaresko; V B Zabolotnyy; Mazhar N Ali; M K Fuccillo; J Van den Brink; B Büchner; R J Cava; S V Borisenko
Journal:  Sci Rep       Date:  2014-06-04       Impact factor: 4.379

10.  Strain induced band inversion and topological phase transition in methyl-decorated stanene film.

Authors:  Dongchao Wang; Li Chen; Hongmei Liu; Changmin Shi; Xiaoli Wang; Guangliang Cui; Pinhua Zhang; Yeqing Chen
Journal:  Sci Rep       Date:  2017-12-06       Impact factor: 4.379

  10 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.