Literature DB >> 28447707

Thickness-dependent Schottky barrier height of MoS2 field-effect transistors.

Junyoung Kwon1, Jong-Young Lee, Young-Jun Yu, Chul-Ho Lee, Xu Cui, James Hone, Gwan-Hyoung Lee.   

Abstract

2D semiconductors, including transition metal dichalcogenides (TMDs), have been widely studied recently. However, the device performance is deteriorated due to the significant contact resistance. The contact resistance of MoS2-metal contacts decreases with the thickness of MoS2. We obtained a Schottky barrier height as low as about 70 meV when MoS2 is trilayer-thick. It is important to find the optimal choice of contact metal and layer thickness of MoS2.

Entities:  

Year:  2017        PMID： 28447707     DOI： 10.1039/c7nr01501a

Source DB:  PubMed          Journal:  Nanoscale        ISSN： 2040-3364            Impact factor:   7.790


  6 in total

1.  Control of polarity in multilayer MoTe2 field-effect transistors by channel thickness.

Authors:  Asha Rani; Kyle DiCamillo; Sergiy Krylyuk; Ratan Debnath; Payam Taheri; Makarand Paranjape; Can E Korman; Mona E Zaghloul; Albert V Davydov
Journal:  Proc SPIE Int Soc Opt Eng       Date:  2018

2.  Improved Contact Resistance by a Single Atomic Layer Tunneling Effect in WS2 /MoTe2 Heterostructures.

Authors:  Jihoon Kim; A Venkatesan; Hanul Kim; Yewon Kim; Dongmok Whang; Gil-Ho Kim
Journal:  Adv Sci (Weinh)       Date:  2021-03-15       Impact factor: 16.806

3.  Ultralow contact resistance between semimetal and monolayer semiconductors.

Authors:  Pin-Chun Shen; Cong Su; Yuxuan Lin; Ang-Sheng Chou; Chao-Ching Cheng; Ji-Hoon Park; Ming-Hui Chiu; Ang-Yu Lu; Hao-Ling Tang; Mohammad Mahdi Tavakoli; Gregory Pitner; Xiang Ji; Zhengyang Cai; Nannan Mao; Jiangtao Wang; Vincent Tung; Ju Li; Jeffrey Bokor; Alex Zettl; Chih-I Wu; Tomás Palacios; Lain-Jong Li; Jing Kong
Journal:  Nature       Date:  2021-05-12       Impact factor: 69.504

4.  All-2D ReS2 transistors with split gates for logic circuitry.

Authors:  Junyoung Kwon; Yongjun Shin; Hyeokjae Kwon; Jae Yoon Lee; Hyunik Park; Kenji Watanabe; Takashi Taniguchi; Jihyun Kim; Chul-Ho Lee; Seongil Im; Gwan-Hyoung Lee
Journal:  Sci Rep       Date:  2019-07-17       Impact factor: 4.379

5.  Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors.

Authors:  Nihar R Pradhan; Carlos Garcia; Bridget Isenberg; Daniel Rhodes; Simin Feng; Shahriar Memaran; Yan Xin; Amber McCreary; Angela R Hight Walker; Aldo Raeliarijaona; Humberto Terrones; Mauricio Terrones; Stephen McGill; Luis Balicas
Journal:  Sci Rep       Date:  2018-08-24       Impact factor: 4.379

6.  Effects of Annealing Temperature and Ambient on Metal/PtSe2 Contact Alloy Formation.

Authors:  Gioele Mirabelli; Lee A Walsh; Farzan Gity; Shubhadeep Bhattacharjee; Conor P Cullen; Cormac Ó Coileáin; Scott Monaghan; Niall McEvoy; Roger Nagle; Paul K Hurley; Ray Duffy
Journal:  ACS Omega       Date:  2019-10-10
  6 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.