| Literature DB >> 28317881 |
Jongjin Kim1, Binyang Hou2, Changyong Park2, Chi Bum Bahn3, Jason Hoffman1, Jennifer Black4, Anand Bhattacharya1, Nina Balke4, Hawoong Hong5, Ji Hyun Kim6, Seungbum Hong1,7.
Abstract
In order to understand the role of defects in chemical reactions, we used two types of samples, which are molecular beam epitaxy (MBE) grown NiO(001) film on Mg(001) substrate as the defect free NiO prototype and NiO grown on Ni(110) single crystal as the one with defects. In-situ observations for oxide-liquid interfacial structure and surface morphology were performed for both samples in water and Pb-contained solution using high-resolution X-ray reflectivity and atomic force microscopy. For the MBE grown NiO, no significant changes were detected in the high-resolution X-ray reflectivity data with monotonic increase in roughness. Meanwhile, in the case of native grown NiO on Ni(110), significant changes in both the morphology and atomistic structure at the interface were observed when immersed in water and Pb-contained solution. Our results provide simple and direct experimental evidence of the role of the defects in chemical reaction of oxide surfaces with both water and Pb-contained solution.Entities:
Year: 2017 PMID: 28317881 PMCID: PMC5357842 DOI: 10.1038/srep44805
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1X-ray reflectivity of as grown NiO on Ni(110) single crystal exposed to helium and water environments.
Figure 2X-ray reflectivity of MBE grown NiO on MgO(001): in helium gas, and immersed in deionized water, and in 10 mM Pb-contained solution.
Figure 3In-situ AFM images for as-grown NiO on Ni(110) (a–c) and MBE grown NiO on MgO(001) (d–f) in air (a), (d), water (b), (e) and 10 mM Pb-contained solution (c), (f) for 15 hrs, respectively. (g) Plot of roughness in each environment.
Figure 4(a) Measured reflectivity intensity of NiO/Ni(110) with/without X-ray in water as function of time at L = 0.25 r.l.u. (near the Bragg peak). (b) Plot of average intensity drop with and without X-ray exposure.