Dataset demonstrating the modeling of a high performance Cu(In,Ga)Se2 absorber based thin film photovoltaic cell.

The physical data of the semiconductor materials used in the design of a CIGS absorber based thin film photovoltaic cell have been presented in this data article. Besides, the values of the contact parameter and operating conditions of the cell have been reported. Furthermore, by conducting the simulation with data corresponding to the device structure: soda-lime glass (SLG) substrate/Mo back-contact/CIGS absorber/CdS buffer/intrinsic ZnO/Al-doped ZnO window/Al-grid front-contact, the solar cell performance parameters such as open circuit voltage [Formula: see text], short circuit current density [Formula: see text], fill factor [Formula: see text], efficiency [Formula: see text], and collection efficiency [Formula: see text] have been analyzed.

Specifications Table

Value of the data

The numerical data described in Table 1 provide the properties of the constituent materials used to design a CIGS solar cell.

Table 1

Physical data of materials used for simulation of CIGS solar cell.

Parameters	n-ZnO: Al	i-ZnO	n-CdS	p-CIGS
Thickness, t_m(µm)	0.20	0.02	0.05	3.00
Dielectric constant, K_s	7.80	7.80	8.28	13.60
Refractive index, N_dx	2.00	2.00	3.16	3.67
Band gap, E_g(eV)	3.30	3.30	2.42	1.21
Electron affinity, χ_e(eV)	4.60	4.60	4.40	4.21
Electron mobility, µ_n(cm^2V^−1s^−1)	160	130	350	100
Hole mobility, µ_p(cm^2V^−1s^−1)	40	30	50	25
Conduction band effective density of states, N_c(cm^−3)	2.2×1018	1.5×1018	1.7×1018	2×1018
Valence band effective density of states, N_v(cm^−3)	1.8×1019	1.6×1019	2.4×1019	1.6×1019
Donor concentration, N_d(cm^−3)	1×1018	2×1017	5×1018	0
Acceptor concentration, N_a(cm^−3)	0	0	0	1×1019
Electron lifetime, τ_n(s)	5×10−8	3×10−8	2×10−8	1×10−8
Hole lifetime, τ_p(s)	5×10−9	3×10−9	6×10−8	5×10−8

Researchers could be able to use this dataset to design and analyze another theoretical model of a photovoltaic cell.

Analyzing these data, one can compare and ensure the validity of other simulation approaches and models.

The values of the performance parameters can be used to compare the simulation results of CIGS solar cell.

Data

The physical data for input parameters of different materials used for designing a highly efficient CIGS solar cell have been presented in Table 1. Along with this dataset, the contact parameters and the conditions under which the simulation was conducted have been demonstrated in Table 2, Table 3 respectively. All of these data has been extracted from the published literatures [1], [2], [3], [4], [5], [6], [7], [8], [9]. Fig. 2 and Table 4 describe the performance measurement parameters of the optimized CIGS absorber based photovoltaic cell.

Table 2

Contact parameters for simulation of CIGS solar cell.

Parameters	Front contact	Back contact
Reflectance	0.1	0.8
Recombination velocity for holes	107	107
Recombination velocity for electrons	107	107

Table 3

Operating conditions based on which the simulation was carried out.

Operating conditions	Description
Illumination condition	AM1.5G
Solar irradiance on earth, E(Wcm^−2)	0.1
Temperature, T_k(K)	300.15
Shadowing factor	0.05

Fig. 2

J-V characteristic curve for optimized CIGS solar cell.

Table 4

Optimized performance parameters of simulated CIGS solar cell.

Performance parameters	Parametric value
Open circuit voltage, V_oc(mV)	856.43
Short circuit current density, J_sc(mAcm^−2)	33.09
Fill factor, FF(%)	85.73
Efficiency, η(%)	24.27
Collection efficiency, η_c(%)	79.46

Experimental design, materials and methods

Device structure of CIGS thin film photovoltaic cell

The schematic design for CIGS absorber based solar cell has been depicted in Fig. 1. A soda lime glass (SLG) has been used as a substrate of the cell. After that, a stack of materials: Mo/Cu(In,Ga)Se2/CdS/i-ZnO/ZnO:Al/Al-grid was proposed for epitaxial growth on the substrate.

Fig. 1

Schematic design of CIGS thin film solar cell.

Performance analysis of CIGS solar cell

ADEPT 2.1 [10], an online device simulator, has been used to simulate the design and analyze the performance of the proposed cell. The performance parameters such as and of the cell has been measured from the J-V characteristic curve as depicted in Fig. 2. Consequently, the , , and have been determined from the simulation outcome of the cell. All of these data describing the performance of the cell are presented in Table 4.

Subject area	Applied physics
More specific subject area	Solar cell device physics
Type of data	Table and figure
How data was acquired	Numerical data for different layer materials of CIGS solar cell has been accumulated from ref[1], [2], [3], [4], [5], [6], [7], [8], [9]and an online simulator, ADEPT 2.1[10], has been used to extract the dataset for performance parameters of the cell.
Data format	Filtered and analyzed
Experimental features	A CIGS solar cell has been structured as SLG/Mo/CIGS/CdS/i-ZnO/ZnO/Al-grid stack. Afterwards, based on the impacts of band gap, thickness, doping concentration, and others mechanical and electrical properties of the materials the values of the performance parameters have been analyzed.
Data accessibility	Dataset is within the data article