Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2 Field-Effect Transistors.

Although monolayer transition metal dichalcogenides (TMDs) exhibit superior optical and electrical characteristics, their use in digital switching devices is limited by incomplete understanding of the metal contact. Comparative studies of Au top and edge contacts with monolayer MoS2 reveal a temperature-dependent ideality factor and Schottky barrier height (SBH). The latter originates from inhomogeneities in MoS2 caused by defects, charge puddles, and grain boundaries, which cause local variation in the work function at Au-MoS2 junctions and thus different activation temperatures for thermionic emission. However, the effect of inhomogeneities due to impurities on the SBH varies with the junction structure. The weak Au-MoS2 interaction in the top contact, which yields a higher SBH and ideality factor, is more affected by inhomogeneities than the strong interaction in the edge contact. Observed differences in the SBH and ideality factor in different junction structures clarify how the SBH and inhomogeneities can be controlled in devices containing TMD materials.