Literature DB >> 28174272

Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes.

Nozomi Nishizawa1, Kazuhiro Nishibayashi1, Hiro Munekata2.   

Abstract

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlO x spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density (J) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm2 There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

Entities:  

Keywords:  circular polarization; nonlinear effect; semiconductors; spin injection; spintronics

Year:  2017        PMID: 28174272      PMCID: PMC5338395          DOI: 10.1073/pnas.1609839114

Source DB:  PubMed          Journal:  Proc Natl Acad Sci U S A        ISSN: 0027-8424            Impact factor:   11.205


  17 in total

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2.  Room-temperature spin injection from Fe into GaAs.

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Journal:  Phys Rev Lett       Date:  2001-06-15       Impact factor: 9.161

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Journal:  Phys Rev Lett       Date:  2002-09-16       Impact factor: 9.161

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Journal:  Appl Opt       Date:  1988-03-15       Impact factor: 1.980

5.  Highly spin-polarized room-temperature tunnel injector for semiconductor spintronics using MgO(100).

Authors:  X Jiang; R Wang; R M Shelby; R M Macfarlane; S R Bank; J S Harris; S S P Parkin
Journal:  Phys Rev Lett       Date:  2005-02-11       Impact factor: 9.161

6.  Coherent manipulation of coupled electron spins in semiconductor quantum dots.

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Journal:  Science       Date:  2005-09-01       Impact factor: 47.728

7.  Single-atom single-photon quantum interface.

Authors:  Tatjana Wilk; Simon C Webster; Axel Kuhn; Gerhard Rempe
Journal:  Science       Date:  2007-06-21       Impact factor: 47.728

8.  Electrical spin injection and threshold reduction in a semiconductor laser.

Authors:  M Holub; J Shin; D Saha; P Bhattacharya
Journal:  Phys Rev Lett       Date:  2007-04-05       Impact factor: 9.161

9.  Integrating fault tolerance algorithm and circularly polarized ellipsometer for point-of-care applications.

Authors:  Chia-Ming Jan; Yu-Hsun Lee; Kuang-Chong Wu; Chih-Kung Lee
Journal:  Opt Express       Date:  2011-03-14       Impact factor: 3.894

10.  Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions.

Authors:  Igor Zutić; Jaroslav Fabian; S Das Sarma
Journal:  Phys Rev Lett       Date:  2002-01-29       Impact factor: 9.161

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  4 in total

1.  Ultrafast spin-lasers.

Authors:  Markus Lindemann; Gaofeng Xu; Tobias Pusch; Rainer Michalzik; Martin R Hofmann; Igor Žutić; Nils C Gerhardt
Journal:  Nature       Date:  2019-04-03       Impact factor: 49.962

2.  In situ tunable circular dichroism of flexible chiral metasurfaces composed of plasmonic nanorod trimers.

Authors:  Hsiang-Ting Lin; Yao-Yu Hsu; Pi-Ju Cheng; Wei-Ting Wang; Shu-Wei Chang; Min-Hsiung Shih
Journal:  Nanoscale Adv       Date:  2022-03-14

Review 3.  Lateral-Type Spin-Photonics Devices: Development and Applications.

Authors:  Nozomi Nishizawa; Hiro Munekata
Journal:  Micromachines (Basel)       Date:  2021-05-31       Impact factor: 2.891

4.  Spin Laser Local Oscillators for Homodyne Detection in Coherent Optical Communications.

Authors:  Nobuhide Yokota; Hiroshi Yasaka
Journal:  Micromachines (Basel)       Date:  2021-05-18       Impact factor: 2.891

  4 in total

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