| Literature DB >> 11461483 |
H J Zhu1, M Ramsteiner, H Kostial, M Wassermeier, H P Schönherr, K H Ploog.
Abstract
Injection of spin polarized electrons from a metal into a semiconductor is demonstrated for a GaAs/(In,Ga)As light emitting diode covered with Fe. The circular polarization degree of the observed electroluminescence reveals a spin injection efficiency of 2%. The underlying injection mechanism is explained in terms of a tunneling process.Entities:
Year: 2001 PMID: 11461483 DOI: 10.1103/PhysRevLett.87.016601
Source DB: PubMed Journal: Phys Rev Lett ISSN: 0031-9007 Impact factor: 9.161