| Literature DB >> 28157636 |
Tao Wan1, Bo Qu1, Haiwei Du1, Xi Lin1, Peiyuan Guan1, Qianru Lin1, Nan Chen1, Thiam Teck Tan1, Tao Hang2, Dewei Chu3.
Abstract
In this work, resistance switching behaviours in solution processed chromium (Cr)-doped strontium titanate (SrTiO3) films have been investigated. Undoped SrTiO3 film shows I-V characteristics of typical nonlinear resistor and no resistance hysteresis loops are observed. On the contrary, Cr-doped SrTiO3 films show stable and reversible hysteresis loops, which can be controlled by applying different voltage bias. Based on a series of characterization results, including X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS), we infer that Ti4+ is substituted by Cr3+, giving rise to increased concentration of oxygen vacancies. Therefore, the observed resistance switching phenomenon is attributed to voltage driven oxygen vacancy migration. Furthermore, gradually decreased overall resistance is also realized under repeated sweeping cycles.Entities:
Keywords: Cr-doped SrTiO(3); Oxygen vacancies; Resistance switching; Solution processed
Year: 2017 PMID: 28157636 DOI: 10.1016/j.jcis.2017.01.095
Source DB: PubMed Journal: J Colloid Interface Sci ISSN: 0021-9797 Impact factor: 8.128