Literature DB >> 28157636

Tunable resistance switching in solution processed chromium-doped strontium titanate nanoparticles films.

Tao Wan1, Bo Qu1, Haiwei Du1, Xi Lin1, Peiyuan Guan1, Qianru Lin1, Nan Chen1, Thiam Teck Tan1, Tao Hang2, Dewei Chu3.   

Abstract

In this work, resistance switching behaviours in solution processed chromium (Cr)-doped strontium titanate (SrTiO3) films have been investigated. Undoped SrTiO3 film shows I-V characteristics of typical nonlinear resistor and no resistance hysteresis loops are observed. On the contrary, Cr-doped SrTiO3 films show stable and reversible hysteresis loops, which can be controlled by applying different voltage bias. Based on a series of characterization results, including X-ray diffraction (XRD), Raman and X-ray photoelectron spectroscopy (XPS), we infer that Ti4+ is substituted by Cr3+, giving rise to increased concentration of oxygen vacancies. Therefore, the observed resistance switching phenomenon is attributed to voltage driven oxygen vacancy migration. Furthermore, gradually decreased overall resistance is also realized under repeated sweeping cycles.
Copyright © 2017 Elsevier Inc. All rights reserved.

Entities:  

Keywords:  Cr-doped SrTiO(3); Oxygen vacancies; Resistance switching; Solution processed

Year:  2017        PMID: 28157636     DOI: 10.1016/j.jcis.2017.01.095

Source DB:  PubMed          Journal:  J Colloid Interface Sci        ISSN: 0021-9797            Impact factor:   8.128


  1 in total

1.  Study on the Multi-level Resistance-Switching Memory and Memory-State-Dependent Photovoltage in Pt/Nd:SrTiO3 Junctions.

Authors:  Shengkai Wang; Xianwen Sun; Guanghui Li; Caihong Jia; Guoqiang Li; Weifeng Zhang
Journal:  Nanoscale Res Lett       Date:  2018-01-12       Impact factor: 4.703

  1 in total

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