Mohammad Aghazadeh Meshgi1, Judith Baumgartner2, Viatcheslav V Jouikov3, Christoph Marschner1. 1. Institut für Anorganische Chemie, Technische Universität Graz , Stremayrgasse 9, 8010 Graz, Austria. 2. Institut für Chemie, Universität Graz , Stremayrgasse 9, 8010 Graz, Austria. 3. UMR 6226, Chimie et Photonique Moléculaires, Université de Rennes 1 , 35042 Rennes, France.
Abstract
Several silatranyl -substituted oligosilanes were prepared starting from bis(trimethylsilyl)silatranylsilanide. Electrochemical and theoretical investigations of some oligosilanes revealed that electrooxidation occurs by formation of a short-lived cation radical. This species undergoes structural relaxation to form a pair of conformers, with endo and exo relationships with respect to the Si-N interaction. Reaction of a 1,4-disilatranyl-1,4-disilanide with 1,2-dichlorotetramethyldisilane gave a mixture of cis and trans diastereomers of a cyclohexasilane with the trans isomer showing a diminished Si-N distance.
Several silatranyl -substituted oligosilanes were prepared starting from bis(trimethylsilyl)silatranylsilanide. Electrochemical and theoretical investigations of some oligosilanes revealed that electrooxidation occurs by formation of a short-lived cation radical. This species undergoes structural relaxation to form a pair of conformers, with endo and exo relationships with respect to the Si-N interaction. Reaction of a 1,4-disilatranyl-1,4-disilanide with 1,2-dichlorotetramethyldisilane gave a mixture of cis and trans diastereomers of a cyclohexasilane with the trans isomer showing a diminished Si-N distance.
Among hypercoordinated
siliconcompounds silatranes (Figure ) occupy a prominent position.[1−4] The suffix “atrane”
was originally proposed by Voronkov
in 1966 for compounds where a central metalloid element such as silicon,
boron, or aluminum is coordinated by a triethanolamine ligand, causing
a transannular interaction of the donornitrogen moiety and the acceptor
element.[5]
Figure 1
Silatrane structure.
Silatrane structure.With respect to a substituent Z occupying silicon’s
remaining
valence there is a general relationship between the Si–Z and
Si–N distances: longer Si–Z bond lengths (implying weaker
Si–Z bonding interactions) usually result in shorter Si–N
distances (suggesting stronger Si–N bonding interactions).
This is consistent with the notion that the axial bonding in pentacoordinated
compounds may be described in terms of three-center–four-electron
(3c-4e) bonding.[6]According to X-ray
diffraction studies of silatranes with Z = H,
halogen, aryl, alkyl, O, the Si–N distance ranges from 2.05
to 2.20 Å, which is significantly shorter than the sum of the
van der Waals radii of silicon and nitrogen at 3.5 Å but is slightly
longer than the typical covalent single Si–N bond distance
of approximately 1.7–1.8 Å. In the gas phase the Si–N
distance increases, suggesting a weaker Si–N interaction.[7] The high flexibility of the trigonal-bipyramidal
structure of silatranes along the Si–N dative bond reflects
the nature of Si–N bonding. In fact the Si–N bonding
neither is covalent nor is based on intermolecular charge transfer.[8] What happens with this unusual bond upon electron
withdrawal, for instance during electrooxidation, is of a great interest
(for classical bonds see ref (9)) but is not known so far. Only scarce reports exist on
the oxidation of 1-organosilatranes,[10−12] though preliminary data
on the cation radicals of organogermatranes[13] suggest it might be very insightful.Interestingly, a survey
of known sila- and germatranes with different
triethanolamine substituents reveals that, despite the large variety
of attached groups Z which have been studied, almost no compounds
of atranes with bonds to other heavy group 14 elements exist.[14] After the first studies by Zaitsev et al., addressing
germylated germatranes,[15] and Yamamoto
et al., studying the potential of silylated silatranes as silyltransfer
regents,[16] we have disclosed our initial
studies on oligosilylated silatranes including some derivatization
chemistry.[17] In the current account we
wish to extend this.
Results and Discussion
Synthesis
In the
view of our recent effort concerning
the investigation of conformational properties of oligosilanes,[18−23] we were interested in studying the effects of silatranyl groups
on the electronic properties of oligosilanes. For this reason we prepared
tris(trimethylsilyl)silylsilatrane (1) by reaction of
tris(trimethylsilyl)silylpotassium[24] with
silatranyl triflate (Scheme ).[17] An analogous reaction of silatranyl
triflate was done with tris(trimethylsilyl)germylpotassium,[25] and the respective tris(trimethylsilyl)germylsilatrane
(1a) was obtained. The related tris(trimethylsilyl)germylgermatrane
was obtained previously by Zaitsev et al. using germatranyl triflate.[15] The NMR spectroscopic properties of 1a are very similar to those of 1. The 1H and 13Csignatures of the silatranecage are almost identical (Table ). In the 29Si NMR spectrum the silatranyl signal at −53.3 ppm is clearly
indicating that there is a hypercoordinative interaction between the
nitrogen and the SiO3 unit.[1−4] The analogous signal of (Me3Si)3SiSi(OMe)3,[26,27] where the silicon atom
has the same substitution pattern but no hypercoordinative interaction,
can be found at −32.2 ppm.
Scheme 1
Formation of Oligosilanylsilatranes
using Salt Elimination Reactions
Table 1
NMR Spectroscopic Data of Oligosilanyl
and Silylgermyl Silatranes and Related Compounds
29Si
SiMe3
SiO3
Siq
other
13C (OCH2/CH2N)
1H (OCH2/CH2N)
1a,b
–9.9
–52.6
–133.9
58.6/52.2b
3.65/2.72b
58.6/51.5c
3.30/1.83c
1ab
–5.6
–53.2
na
58.6/52.2
3.67/2.73
(Me3Si)3SiSi(OMe)3c,d
–9.8
–32.2
–141.1
na
na
2c
–3.2
–11.8
–210.5
61.0/54.3
3.86/2.84
2ac
–2.0
–13.0
na
60.9/54.2
3.84/2.83
7c
–2.3
–9.9
–209.0
–24.1 (Me2Si)
61.0/54.5
3.92/2.91
cis-8c
–7.8
–50.7
–129.9
–37.5 (Me2Si)
59.0/51.9
3.40/1.92
trans-8c
–6.4
–52.3
–130.3
–36.2
(Me2Si)
58.9/51.7
3.37/1.90
Data taken from ref (17).
Measured in CDCl3.
Measured in C6D6.
Data
taken from refs (26 and 27.)
Data taken from ref (17).Measured in CDCl3.Measured in C6D6.Data
taken from refs (26 and 27.)The only significant differences
in the 29Si spectra
of 1 and 1a are the missing quaternary silicon
atom for 1a and the signal for the Me3Si groups
located at −5.6 ppm, which is a perfectly reasonable chemical
shift for (Me3Si)3Ge groups.[24]The solid-state structure of 1a (Figure ) in the crystal
is also similar
to that of 1. Cell parameters of both compounds crystallizing
in the triclinic space group P1̅ are rather
similar. The Si···N distance of 2.250(9) Å for 1a is a bit shorter than the 2.292(3) Å found for 1, which indicates that the (Me3Si)3Ge unit is less electron donating than (Me3Si)3Si (Table ).
Figure 2
Molecular structure of 1a (thermal ellipsoid plot
drawn at the 30% probability level). All hydrogen atoms are omitted
for clarity. Bond lengths (Å) and angles (deg): Si(1)–C(1)
1.87(2), Si(1)–Ge(1) 2.379(5), Si(2)–Ge(1) 2.358(5),
Si(3)–Ge(1) 2.367(5), Si(4)–Ge(1) 2.378(3), O(1)–C(10)
1.42(2), O(1)–Si(4) 1.674(13), C(10)–C(11) 1.49(3),
C(11)–N(1) 1.54(2), Si(4)–N(1) 2.250(10); Si(2)–Ge(1)–Si(11)
81.0(3), Si(2)–Ge(1)–Si(3) 109.99(18), O(3)–Si(4)–O(2)
117.3(7), O(1)–Si(4)–O(2) 117.1(7), N(1)–Si(4)–Ge(1)
179.2(3).
Table 2
Compilation of Structural Data Derived
by Single-Crystal XRD Analysis of 1a, 2a, , and
d(Si···N) (Å)
d(E–SiO3)
(Å)
d(E–SiMe3) (Å)
∠Me3SiESi (deg)
∑∠SiSiR (deg)
1
2.292(3)
2.351(2)
2.335(2)–2.341(2)
1a
2.250(10)
2.378(3)
2.367(6), 2.358(5), 2.380(6)
110.0(2), 109.8(2), 110.3(2)
330.1(2)
2
3.134(4)
2.308(2)
2.312(2)/2.318(2)
2a
3.131(5)
2.355(2)
2.355(2), 2.359(2)
101.95(6)
359.40(5)
cis-8
2.2912(15)/2.3326(15)
2.3447(8)/2.3429(7)
2.3427(8), 2.3455(8)
331.41(2), 336.31(2)
trans-8
2.194(2)
2.3639(10)
2.339(1)
327.18(3)
Molecular structure of 1a (thermal ellipsoid plot
drawn at the 30% probability level). All hydrogen atoms are omitted
for clarity. Bond lengths (Å) and angles (deg): Si(1)–C(1)
1.87(2), Si(1)–Ge(1) 2.379(5), Si(2)–Ge(1) 2.358(5),
Si(3)–Ge(1) 2.367(5), Si(4)–Ge(1) 2.378(3), O(1)–C(10)
1.42(2), O(1)–Si(4) 1.674(13), C(10)–C(11) 1.49(3),
C(11)–N(1) 1.54(2), Si(4)–N(1) 2.250(10); Si(2)–Ge(1)–Si(11)
81.0(3), Si(2)–Ge(1)–Si(3) 109.99(18), O(3)–Si(4)–O(2)
117.3(7), O(1)–Si(4)–O(2) 117.1(7), N(1)–Si(4)–Ge(1)
179.2(3).As our previous studies on oligosilanes
and germanes have relied
on the faciletrimethylsilyl group abstraction using KOBu, we were pleased to find that compounds 1 and 1a smoothly undergo reactions with KOBu in the presence of 18-crown-6 to form
the respective silanide 2(17) and germanide 2a (Scheme ). Again 2 and 2a are very similar with respect to their spectroscopic properties.
The 1H and 13C spectra are almost identical
(Table ), and for
the case of the 29Si spectra only the missing silanide
resonance at −210.5 ppm distinguishes 2 from 2a (Table ). The SiO3 resonance at −13.0 ppm, which is a
typical value for a tetracoordinate silicon atom with this particular
substitution pattern, clearly shows that no Si···N
interaction is any longer present. Confirmation for this is provided
by the crystal structure of 2a (Figure ), which exhibits a long Si–N distance
of 3.131(5) Å (Table ). Again the structures of 2 and 2a are very similar, both crystallizing in the monoclinic space group P21/n with nearly identical
cell parameters.[17]
Scheme 2
Derivatization of
Oligosilanylsilatranes
Figure 3
Molecular structure of 2a (thermal ellipsoid plot
drawn at the 30% probability level). All hydrogen atoms are omitted
for clarity. Bond lengths (Å) and angles (deg): O(1)–C(1)
1.475(10), O(1)–Si(1) 1.633(5), C(1)–C(2) 1.492(11),
Ge(1)–Si(1) 2.3552(16), Ge(1)–Si(3) 2.3554(19), Ge(1)–Si(2)
2.3588(16), Ge(1)–K(1) 3.3393(14), N(1)–C(2) 1.444(10),
Si(2)–C(7) 1.875(7); Si(1)–Ge(1)–Si(3) 96.29(6),
Si(1)–Ge(1)–Si(2) 97.87(6), Si(3)–Ge(1)–Si(2)
101.94(6), Si(1)–Ge(1)–K(1) 81.98(4), Si(3)–Ge(1)–K(1)
126.17(5), Si(2)–Ge(1)–K(1) 131.73(5), O(1)–Si(1)–O(3)
109.2(3), N(1)–C(6)–C(5) 119.8(7).
Molecular structure of 2a (thermal ellipsoid plot
drawn at the 30% probability level). All hydrogen atoms are omitted
for clarity. Bond lengths (Å) and angles (deg): O(1)–C(1)
1.475(10), O(1)–Si(1) 1.633(5), C(1)–C(2) 1.492(11),
Ge(1)–Si(1) 2.3552(16), Ge(1)–Si(3) 2.3554(19), Ge(1)–Si(2)
2.3588(16), Ge(1)–K(1) 3.3393(14), N(1)–C(2) 1.444(10),
Si(2)–C(7) 1.875(7); Si(1)–Ge(1)–Si(3) 96.29(6),
Si(1)–Ge(1)–Si(2) 97.87(6), Si(3)–Ge(1)–Si(2)
101.94(6), Si(1)–Ge(1)–K(1) 81.98(4), Si(3)–Ge(1)–K(1)
126.17(5), Si(2)–Ge(1)–K(1) 131.73(5), O(1)–Si(1)–O(3)
109.2(3), N(1)–C(6)–C(5) 119.8(7).For an understanding of the influence of a silatranyl substituent
on the σ-electron delocalization of oligosilanes, compound 1 is of limited use, as UV spectroscopic studies of the delocalization
phenomenon typically require chains of at least five or six linearly
connected silicon atoms.[22] Therefore, we
used silatranylsilanide 2 to prepare the hexasilanes 3(17) and 4(17) by reacting it with the appropriate chlorosilanesCl(SiMe2)2Cl and Cl(SiMe2)2Si(SiMe3)3 (Scheme ).[17]The
UV spectra of compounds 3 and 4 were
compared to those of the structurally related compounds 2,2,5,5-tetrakis(trimethylsilyl)decamethylhexasilane
(5)[28] and 2,5-bis(trimethylsilyl)dodecamethylhexasilane
(6),[29] which also contain
hexasilane units as the longest chain segments. Comparison of the
low-energy bands associated with the longest chain segments revealed
that for compound 3, containing one silatranyl group,
the longest wavelength absorption band (254 nm) shows a 2 nm hypsochromic
shift with respect to 5.[17]The same band is shifted further toward blue by another 2
nm for
compound 4. While the molecular structure of 4 in the solid state indicates the silatranyl units to be part of
the all-transoid hexasilaneconformer, it needs to be pointed out
that for 3 and 4 in solution rotational
processes of the bulky tris(trimethylsilyl)silyl and bis(trimethylsilyl)silatranylsilyl
groups are likely to be facile and therefore all-transoid hexasilaneconformers with trimethylsilyl end groups are presumably contributing
to the hexasilane absorption band. Conversely, for 2,5-bis(trimethylsilyl)dodecamethylhexasilane
(6), where two trimethylsilyl groups are exchanged for
methyl groups, the hexasilane band shows a bathochromic shift of 7
nm to an absorption maximum of 263 nm.[17] This behavior is consistent with the typically observed trend of
electron-withdrawing substituents causing a bathochromic shift of
the absorption maxima and electron-donating groups being responsible
for a contrary behavior.[30]
Voltammetry
In order to gain further insight into the
electronic structures of 3 and 4, electrochemical
measurements were conducted. Oxidation of these oligosilanyl silatranes
was carried out in CH3CN/0.1 M Bu4NPF6 at Pt and glassy-carbon (GC) disk electrodes. Although solubility
does not allow obtaining solutions more concentrated than 2–3
mmol L–1 in this media, both compounds exhibit reasonably
well shaped oxidation peaks in the range 1.3–1.5 V vs SCE.
On the reduction side, 3 and 4 do not show
any cathodic reduction up to −3.1 V, which is in line with
the fact that neither polysilanechains[31,32] nor the silatranyl
moiety (a strong electron donor itself)[33] are reducible electrochemically.The first oxidation potentials
of 3 and 4 (Ep = 1.332 and 1.335 V, respectively) are practically similar, showing
that there is no noticeable electronic interaction between the two
silatrane units in 4. Their oxidation peaks are diffusion-controlled
(ip/v1/2 is
invariable with the scan rate for v = 0.1–10
V s–1), which allows determining the number of electrons
transferred at
the first step using the diffusion-controlled one-electron oxidation
current of ferrocene under similar conditions or else combining ipv–1/2 with
the Cottrell slope it1/2 from chronoamperometry.[34] Both methods converge at the electron stoichiometry n = 1. With this, the half-widths of the first oxidation
peaks (Ep-p/2 = 160 mV for 3 and 147 mV for 4) are much larger than that
for an electrochemically reversible process (ΔEp-p/2 = 57 mV). The reverse peaks (reduction of
the species issued from the oxidation at Epa) observed for these silatranes at reasonably high scan
rates (Figure ) are
also shifted to less positive potentials with Epa–Epc peak separations of 80–85 mV at 20 °C. These facts characterize
the primary oxidation steps of 3 and 4 as
quasi-reversible (apparent E0endo), resulting in the corresponding cation radicals whose relaxation
to the stable geometry requires substantial reorganization energy.
Figure 4
(a) Cyclic
voltammogram of the oxidation of 3 (2.2
mmol L–1) in CH3CN/0.1 M Bu4NPF6 at a GC disk electrode. Conditions: T = 20 °C, v = 0.2 V s–1.
(b) Irreversible oxidation of N(CH2CH2OH)3 under similar conditions.
(a) Cyclic
voltammogram of the oxidation of 3 (2.2
mmol L–1) in CH3CN/0.1 M Bu4NPF6 at a GC disk electrode. Conditions: T = 20 °C, v = 0.2 V s–1.
(b) Irreversible oxidation of N(CH2CH2OH)3 under similar conditions.For 4, the first oxidation peak is followed
by a second
oxidation (Ep2 = 1.62 V), which
has a similar electron stoichiometry of n = 1 and
is apparently electrochemically (quasi-)reversible; this step was
assigned to the oxidation of the second silatranyl unit occurring
at slightly more positive potentials because of the positive charge
carried by the oxidized first silatranyl group. Increasing the scan
rate reveals that the electron transfer (ET) kinetics of the first
step starts limiting the overall rate of oxidation at v > 2–5 V s–1 and the peak width ΔEp-p/2 increases above 300 mV with no
substantial increase in the cathodiccounterpart of the main anodic
peak.At more positive potentials, silatrane 3—like
other known silatranes—shows a small peak (Ep ≅ 1.8 V) supposedly arising from further oxidation
of its cation radical to the dication. It is noteworthy that on the
reverse scan in square-wave cyclic voltammetry (SWCV) one can notice
a weak signal corresponding to the reduction of the 32+ back to 3 (Figure ). For 4, two one-electron consecutive oxidations of two silatranyl
units (peaks 1 and 2) take place before the potential of formation
of the dication, which is now shifted to ca. 2 V. The SWCV of 4 shows both oxidation steps to have cathodiccounterparts.
Interestingly, an additional reduction signal appears on the reverse
scan in CV of 3 (Figure ), corresponding to a new redox couple with less anodic
standard potential (E0exo =
0.67 V), quite close to but slightly higher than Ep of the irreversible oxidation of N(CH2CH2OH)3. The reduction component of this new redox
couple is well seen in SWCV (Figure ). Since the nitrogen lone pair in the exo form (with
stretched N–Si distance) is supposed to be much less involved
in a 3c-4e interaction and hence be better available for ET, this
redox pair was assigned to the exo form 3/3 (E0exo).
Figure 5
SWCV curves of the oxidation of (a) 3 and (b) 4 (both at 2.2 mmol L–1) in CH3CN/0.1 M Bu4NPF6 at a GC disk electrode. Conditions: T = 20 °C, v = 0.333 V s–1. Two reversible one-electron oxidations of both silatranyl units
are seen for 4.
SWCVcurves of the oxidation of (a) 3 and (b) 4 (both at 2.2 mmol L–1) in CH3CN/0.1 M Bu4NPF6 at a GC disk electrode. Conditions: T = 20 °C, v = 0.333 V s–1. Two reversible one-electron oxidations of both silatranyl units
are seen for 4.
DFT Modeling
The oxidation of di- and polysilane derivatives
usually requires potentials of 1.3–1.7 V vs SCE,[31,32,35−41] which are overlapping with the range of the few known oxidation Ep values of silatranes, 1.4–1.8 V.[10−12] Since the silatranyl moiety is a good electron donor[2,33] and is able to ease the oxidation of the connected redox units,[42] it might create a confusion as to the place
of electron withdrawal from 3 and 4. In
this respect, germanium analogues of silatranes were earlier classified
into two groups, according to their oxidation pattern which depends
on the substituent at Ge—“proper” germatranes,
i.e. those where the oxidation affects the atranecage, and the others,
with a substituent whose own oxidation potential is lower than that
of the atrane unit.[13]A similar principle
is expected to apply to the silatrane family. In order to reveal the
reaction site of oxidation in 3 and 4, DFT
calculations on the model compound [(trimethylsilyl)silyl]silatrane—both
on its neutral form (1) and on its cation radical (1•+)—were carried out at the B3LYP/Lanl2DZ
level under vacuum and in acetonitrile (AN) solution (accounted for
through the CPCM model with ε = 36). Along with the main geometrical
parameters, the N–Si distance (2.3 Å in AN vs 2.29 Å
from X-ray diffractometry)[17] was very well
reproduced by the calculations. Both calculations localize the HOMO
on the silatrane unit, with the dominant contribution from the N lone
pair and the 3e-4ccharacter of HOMO being well-defined in both cases;
the separation of HOMO from HOMO-1 and HOMO-2 being similar in AN
(Figure ). The next
lower lying orbitals, HOMO-1 and HOMO-2 (the combinations of Si–Si
σ-bonds of the oligosilyl substituent orthogonal to the 3c-4e
system), are 0.13 and 0.18 eV (vacuum) and 0.02 eV (AN) lower in energy;
therefore, the electron withdrawal upon oxidation most probably affects
the N-based 3c-4e silatrane system of this compound, as in other “proper”
silatranes.[11,12] Note that though the energy difference
in the solution is very small (ca. 0.5 kcal mol–1), the orthogonality of HOMO and HOMO-1,2 preserves them from hybrid
formation so that they remain individual orbitals. Thus, though irreversible oxidation of the related oligosilane (Me3Si)4Si—the substituent-forming unit in 1, 3, and 4—occurs at Ep = 1.43 V vs SCE, i.e. very close to Ep(3) and Ep(4), the reversible ET from
the atranecage in these compounds seems more probable than the oxidation
of the substituent. The DFT calculations agree well with the experimental
observation of only one oxidation step for 3 and of two
steps for 4 corresponding to the electron withdrawal
from one or two silatranyl units, respectively (Figures and 5), and with
quasi-reversible character of their oxidation. Note that the oxidation
of linear and cyclicpolysilanes is usually electrochemically irreversible
and involves Si–Si bond cleavage.[35,38,39]
Figure 6
Atrane cage-located HOMO of (Me3Si)3Si–Si(OCH2CH2)3N (1) and lower-lying
filled orbitals under vacuum (left) and in acetonitrile (right) from
DFT B3LYP/Lanl2DZ calculations. The N lone pair electrons and the
Si–Si σ-bond components of the 3c-4e system are clearly
seen in the HOMO.
Atranecage-located HOMO of (Me3Si)3Si–Si(OCH2CH2)3N (1) and lower-lying
filled orbitals under vacuum (left) and in acetonitrile (right) from
DFT B3LYP/Lanl2DZ calculations. The N lone pair electrons and the
Si–Si σ-bond components of the 3c-4e system are clearly
seen in the HOMO.In neutral silatranes,
the length of the N→Si intramolecular
bond is very sensitive to the polarity of the substituents at Si[2,3] so that the positive charge induced by one-electron withdrawal is
expected to provoke even stronger changes in the atranecage geometry.
The potential energy (PE) profiles of 1 and 1+• at different N–Si distances were therefore
calculated at the B3LYP/Lanl2DZ level. The neutral silatrane has a
sole energy minimum corresponding to its endoconfiguration (Figure ). In contrast and
very interestingly, 1•+ exhibits two
stable geometries, endo and exo. Under vacuum, the endo form (with
an N–Si distance 0.25 Å shorter than that in 1) is preferred over the exo form (0.65 Å longer N–Si
distance), which is in contrast with the data of voltammetry suggesting,
on the basis of the ip values assigned
to the corresponding forms, the inverse order, in favor of the exo
form. In solution, the situation is reversed and agrees with the experiment: 1•+exo is now at −0.134
eV (Kexo/endo = 1.8 × 102), an energetically favored global minimum. The value of Kexo/endo supports the quite high reorganization
requirement responsible for the quasi-reversible character of electron
withdrawal and the observed absence of an increase in ic/ia ratio with scan rate.
This is in line with the narrower (smaller Ep–Ep/2) reduction peak of 1•+exo in comparison to the endo
form. The difference in orbital energies εSOMO of
the two cation radicals is 0.34 eV (7.85 kcal mol–1) in favor of 1•+exo, which
is also in good agreement with the difference of E0exo/endo from CV.
Figure 7
Gas-phase PE profiles
of neutral 1 (a) and of its
cation radical (b), plotted at zero driving force (from DFT B3LYP/Lanl2DZ).
The inset shows λf and λb, the forward
and backward reorganization energies, and the standard activation
barrier ΔG0⧧ for
the 1•+endo/1 redox pair.
Gas-phase PE profiles
of neutral 1 (a) and of its
cation radical (b), plotted at zero driving force (from DFT B3LYP/Lanl2DZ).
The inset shows λf and λb, the forward
and backward reorganization energies, and the standard activation
barrier ΔG0⧧ for
the 1•+endo/1 redox pair.In AN, structural differentiation
of both forms from neutral 1 is more distinct: the N–Si
distance in 1•+endo and 1•+exo is respectively 0.4 Å
shorter and 0.8 Å
longer than that in 1. The practically parabolic PE profile
of 1+•exo (Figure ) is separated from the endo
form by an interconversion barrier of 0.38 eV (≅10 kcal mol–1; i.e. 4 times that under vacuum). Both experiment
and calculations in AN are thus in agreement with the character of
hypercoordination at Si2, implying that a longer N–Si
distance (and a shorter (N→)Si–Si(1) length) should
be observed in case of the atrane-localized oxidation (weakening N→Si
interaction), while oxidation on the oligosilanyl substituent would
shorten this distance, similarly to the effect of acceptor substituents
at Si.[2,3]
Figure 8
PE profiles of neutral 1 (a) and
of the cation radical 1•+ (b) in AN
solution at zero driving force
(from DFT B3LYP/Lanl2DZ CPCM calculations). The corresponding entities
λf, λb, and ΔG0⧧ are as in Figure .
PE profiles of neutral 1 (a) and
of the cation radical 1•+ (b) in AN
solution at zero driving force
(from DFT B3LYP/Lanl2DZ CPCM calculations). The corresponding entities
λf, λb, and ΔG0⧧ are as in Figure .The PE profile of the cation radical not being symmetrical,
the
minimum of 1 falls between those of the two forms of 1•+. In this case, applying a Marcus ET
treatment on the basis of the harmonic oscillator model[43] is somewhat tricky because of a complex nonparabolic
pattern of the PE curve between the two minima: first, the standard
activation energy ΔG0⧧ no longer equals λ/4; its values can therefore be directly
taken from the calculated PE for 1 and 1•+ (Figure ; note that a small ΔG0⧧ value is consistent with the reversible character
of ET).Second, the reorganization energy λf from the
ground state of 1 to the crossing with the PE profile
of the cation radical is 0.287 eV; an additional 0.096 eV (λf′) is required to reach the transition state between
the endo and exo forms of 1•+. This
totals 0.383 eV needed for accomplishing the transition 1 → 1•+exo on the
reaction coordinate. A classical parabolic approach (Figure , dotted line) would imply
a much higher reorganization energy, λf + λf′ + λf″ ≅ 1.44 eV, which
seems improbable. Adiabaticionization potentials (ΔG0) related to 1•+exo and 1•+endo and the reorganization (λf) and activation (ΔG0⧧) parameters from DFT calculations[44] allow assessing the relative rates of ET within
these redox pairs by simply combining two quadratic activation-driving
force equations:[43,45]Then, supposing the
practical equality of the pre-exponential factors Z for both cation radicals, the ET rate constants can be
related from exp(ΔG⧧endo – ΔG⧧exo) as ksendo ≅
9.48ksexo.The situation
can be rationalized (Scheme ) as the formation of an endocation radical
(implied by the least motion principle)[46] with its following conversion to the thermodynamic product 1•+exo. In fact, ET to form 1•+endo is faster (from ΔG⧧), but the formation of 1•+exo is preferable because its activation
barrier is lower than the total gain in energy (ΔG0). However, practical invariance of the reduction peaks
of the two forms (ipendo/ipexo) with the scan rate suggests
that they are not related by an ECE-type sequence[47] but rather belong to a common Curtin–Hammett kinetic
scheme[46] realized in the electrochemical
context.
Scheme 3
Redox Transformations at the Oxidation of 1
Derivatization
The fact that compounds 1 and 1a can easily
be converted into 2 and 2a (Scheme ) is highly encouraging, as
it allows the facile use of the respective
anions as building blocks.[17] Further extending
this chemistry, we were interested in reacting compound 4 with 2 equiv of KOBu (Scheme ). Similar to an analogous
reaction of 5,[29,48] it was possible to
obtain the 1,4-disilanide 7 in the presence of 2 equiv
of 18-crown-6 (Scheme ). The NMR spectroscopic properties of 7 are very similar
to those of 2 (Table ). Again in the 29Si spectrum the SiO3 resonance at −9.9 ppm clearly indicates no Si–N
interaction. The SiMe3 resonances at −2.3 ppm are
typical for trimethylsilyl groups attached to a silanide. The most
interesting peak in the 29Si spectrum is that at −209.0
ppm (Table ), which
shows the typical upfield shift for silylated silanides. While such
resonances are usually found around −190 ppm, the further upfield
shift results from coordination of the potassium ion to a silatraneoxygen atom. This causes a higher degree of ion pair separation, which
is reflected by the chemical shift.
Scheme 4
Conversion of the
1,4-Disilatranyloligosilane 4 to the
Respective 1,4-Disilanide 7 and Further to the 1,4-Disilatranylcyclohexasilane 8, Which Forms as a Mixture of Two Diastereomers
Further reaction of 7 with 1,2-dichlorotetramethyldisilane
proceeded to the expected cyclohexasilane 8, which formed
as a mixture of the cis and trans diastereomers (Scheme ). Compounds 8 and -8 could be separated by crystallization from
different solvent mixtures. Single-crystal X-ray diffraction studies
of both diastereomers showed that the six-membered ring in the cis
isomer (Figure ) resembles
the previously reported 1,1,4,4-tetrakis(trimethylsilyl)octamethylcyclohexasilane,[49] which exhibits a twisted-boat conformation.[50] In contrast to this, -8 (Figure ) was found to engage in the typical chair conformation,
with the silatranyl units occupying the axial positions. In cases
of cyclohexanes typically the sterically more demanding substituents
prefer the equatorial positions. This seems to indicate that the local
steric demand of the silatranyl units is smaller than that of the
trimethylsilyl groups. Given that Si–O bonds are shorter than
Si–C bonds, this makes some sense. However, the oxygen atoms
around the silatranesilicon atom are located in pseudoequatorial
positions, bringing them in closer proximity to the tetrasilylated
silicon atom in comparison to the methyl carbon atoms of the trimethylsilyl
groups. This seems to suggest that the silatrane preference for axial
positions is not only caused by steric reasons. It is likely that
the orientation of the rather polar Si–Si–N units in
the crystal plays a role. The NMR spectroscopic properties of -8 and -8 (Table ) are very similar. The SiO3 resonance of -8 (−50.7 ppm) is slightly
less shielded than that of -8 (−52.3 ppm), indicating less Si–N interaction.
This assumption is supported by the XRD data of -8 and -8 (Table ), which show profoundly different Si–N distances of 2.2912(15)/2.3326(15)
Å for -8 and 2.194(2)
Å for -8. It
seems likely that the very short Si–N distance for -8 is in part caused by the
crystal packing and the trans geometry seems also to facilitate this
interaction by a compensation of dipole moment.
Figure 9
Molecular structure of -8 (thermal ellipsoid plot drawn at the 30%
probability level). All
hydrogen atoms are omitted for clarity. Bond lengths (Å) and
angles (deg): Si(1)–Si(7) 2.3447(8), Si(1)–Si(8) 2.3454(7),
Si(1)–Si(6) 2.3527(8), Si(1)–Si(2) 2.3540(7), Si(2)–C(1)
1.8966(17), Si(4)–Si(9) 2.3429(7), Si(7)–O(1) 1.6676(12),
Si(7)–N(1) 2.2912(15), Si(9)–O(4) 1.6572(12), Si(9)–N(2)
2.3326(15), N(1)–C(16) 1.460(2), N(2)–C(21) 1.462(3),
O(1)–C(15) 1.418(2), O(4)–C(23) 1.421(2), C(17)–C(18)
1.512(2); Si(7)–Si(1)–Si(8) 104.75(2), Si(5)–Si(4)–Si(9)
109.97(2), O(2)–Si(7)–O(1) 117.62(6), O(4)–Si(9)–O(5)
115.53(7), O(4)–Si(9)–O(6) 116.64(7), C(16)–N(1)–C(18)
114.20(13).
Figure 10
Molecular structure
of -8 (thermal ellipsoid
plot drawn at the 30% probability level).
All hydrogen atoms are omitted for clarity. Bond lengths (Å)
and angles (deg): Si(1)–Si(2) 2.3639(10), Si(4)–C(10)
1.890(3), Si(2)–O(1) 1.6731(18), Si(2)–N(1) 2.194(2),
O(1)–C(1) 1.421(3), N(1)–C(2) 1.470(3), C(2)–C(1)
1.522(4); Si(3)–Si(1)–Si(4) 107.57(4), Si(3)–Si(1)–Si(5)
110.31(4), Si(4)–Si(1)–Si(5) 109.32(4), Si(3)–Si(1)–Si(2)
107.23(3), Si(4)–Si(1)–Si(2) 110.58(3), Si(5)–Si(1)–Si(2)
111.74(4), C(4)–N(1)–C(2) 114.5(2).
It is known
that alkylated cyclosilanes ((R2Si), n = 3–7) with smaller
ring size exhibit a hypsochromic shift in the UV absorption spectrum,
while on a further increase in the ring size the absorption behavior
resembles more the linear compounds with bathochromic shifts.[51] The UV absorption spectrum of 1,1,4,4-tetrakis(trimethylsilyl)octamethylcyclohexasilane
shows two bands at 246 and 268 nm,[22] whereas
the related spectrum of -8 exhibits a band at 242 nm and a trailing shoulder around 270 nm.
The spectrum of -8 finally does not show distinct bands. A shoulder that is not well
resolved appears slightly blue shifted in comparison to -8. This picture is consistent with
the hypsochromic shift of 4 in comparison to 5 that is described above.Molecular structure of -8 (thermal ellipsoid plot drawn at the 30%
probability level). All
hydrogen atoms are omitted for clarity. Bond lengths (Å) and
angles (deg): Si(1)–Si(7) 2.3447(8), Si(1)–Si(8) 2.3454(7),
Si(1)–Si(6) 2.3527(8), Si(1)–Si(2) 2.3540(7), Si(2)–C(1)
1.8966(17), Si(4)–Si(9) 2.3429(7), Si(7)–O(1) 1.6676(12),
Si(7)–N(1) 2.2912(15), Si(9)–O(4) 1.6572(12), Si(9)–N(2)
2.3326(15), N(1)–C(16) 1.460(2), N(2)–C(21) 1.462(3),
O(1)–C(15) 1.418(2), O(4)–C(23) 1.421(2), C(17)–C(18)
1.512(2); Si(7)–Si(1)–Si(8) 104.75(2), Si(5)–Si(4)–Si(9)
109.97(2), O(2)–Si(7)–O(1) 117.62(6), O(4)–Si(9)–O(5)
115.53(7), O(4)–Si(9)–O(6) 116.64(7), C(16)–N(1)–C(18)
114.20(13).Molecular structure
of -8 (thermal ellipsoid
plot drawn at the 30% probability level).
All hydrogen atoms are omitted for clarity. Bond lengths (Å)
and angles (deg): Si(1)–Si(2) 2.3639(10), Si(4)–C(10)
1.890(3), Si(2)–O(1) 1.6731(18), Si(2)–N(1) 2.194(2),
O(1)–C(1) 1.421(3), N(1)–C(2) 1.470(3), C(2)–C(1)
1.522(4); Si(3)–Si(1)–Si(4) 107.57(4), Si(3)–Si(1)–Si(5)
110.31(4), Si(4)–Si(1)–Si(5) 109.32(4), Si(3)–Si(1)–Si(2)
107.23(3), Si(4)–Si(1)–Si(2) 110.58(3), Si(5)–Si(1)–Si(2)
111.74(4), C(4)–N(1)–C(2) 114.5(2).
Conclusion
The recent report of the tris(trimethylsilyl)silylated
silatrane 1 and its conversion to the related potassiumsilanide 2(17) have added the
silatranyl substituent
to the toolbox of oligosilanechemistry. Its influence on σ-bond
electron delocalization was analyzed by UV spectroscopy using the
related oligosilanes 3 and 4. In order to
gain a better insight into silatranyl-substituted oligosilanes, electrochemical
studies were carried out, accompanied by a theoretical study using
DFT methods. The voltammetric behavior of 3 and 4 could be rationalized as an initial one-electron withdrawal
from the HOMO of the silatranyl unit (two sequential oxidations of
two units in 4), providing a short-lived cation radical
that undergoes structural relaxation to form a pair of N–Si
bond length conformers, endo and exo, distributed according to the
corresponding activation barriers of their interconversion. Although
ET in the endo redox pair seems faster since less internal reorganization
is involved, the exo form of the cation radical is a global minimum
on the PE curve in solution and the reversibility of ET with endergoniccharacter of electrooxidation of these silatranes provides sufficient
driving force to allow the observation of both forms. After the removal
of one electron from the 3c-4e bonding scheme (which in fact becomes
a much weaker 3c-3e bond, not sufficient to retain the system in endo
form), the nitrogen atom in the resulting species adopts the exo configuration
which is maintained during fast ET so that the apparent potential
of the 3•+exo/3exo pair (Figures and 5) becomes comparable with the
oxidation potential of triethanolamine, in which a N→Si dative
interaction is absent. However, the fundamental difference in the
oxidation of 3 and 4 and of triethanolamine
is that the ET from the former species is reversible while from the
latter it is not. Solvation in acetonitrile appears to be an important
factor in the electrochemical reactivity of silatranes; therefore,
it must be taken into account for correct interpretation of the experiment.
A particularly interesting finding is the doubly oxidized form of 4, which, due to the specific structure of its poorly interacting
3c-4e silatrane systems, might exist as a biradical; it certainly
merits a special study.Reacting oligosilanes 4 with 2 equiv of KOBu provides easy
access to a 1,4-disilatranyl-1,4-disilanide.
Further reaction with 1,2-dichlorotetramethyldisilane led to the formation
of a mixture of cis and trans isomers of cyclohexasilane 8. Interestingly, the silatranyl units in the trans isomer show a
substantially diminished Si–N distance and accordingly an elongated
Si–SiO3 distance.
Experimental
Section
General Remarks
All reactions involving air-sensitive
compounds were carried out under an atmosphere of dry nitrogen or
argon using either Schlenk techniques or a glovebox. Solvents were
dried using a column-based solvent purification system.[52] Compounds 1,[17]2,[17]3,[17]4,[17] tris(trimethylsilyl)germylpotassium,[25] silatranyl triflate,[17] and 1,2-dichlorotetramethyldisilane[53,54] were prepared according to previously published procedures. All
other chemicals were obtained from different suppliers and used without
further purification.1H (300 MHz), 13C (75.4 MHz), and 29Si (59.3 MHz) NMR spectra were recorded
on a Varian INOVA 300 spectrometer and are referenced to tetramethylsilane
(TMS) for 1H, 13C, and 29Si. In the
case of reaction samples a D2Ocapillary was used to provide
an external lock frequency signal. To compensate for the low isotopic
abundance of 29Si, the INEPT pulse sequence[55,56] was used for the amplification of the signal. Elemental analysis
was carried out using a Heraeus VARIO ELEMENTAR instrument. For silanides 2a and 7 elemental analysis was not possible
due to their extreme sensitivity. For - and elemental analysis did
not provide a criterion of purity, since they are isomeric. Therefore,
for compounds 2a, 7, and - and 1H, 13C, and 29Si NMR spectra are provided in
the Supporting Information. GC/MS analyses
were carried out on an Agilent 7890A GC instrument (capillary column
HP-5MS; 30 m × 0.250 mm; film 0.25 μm) with an Agilent
5975C mass spectrometer.Cyclic voltammetry and
square wave pulse
voltammetry experiments were carried out using a PAR 2373 computer-piloted
potentiostat under PAR PowerSuite (release 2.58)[57] software. A conventional 5 mL three-electrode electrochemical
cell was used with a Pt-wire counter electrode and an Ag/AgCl reference
electrode. The potentials were additionally corrected using E0 of the reversible couple Fc+/Fc
(0.31 V vs SCE)[58] and brought to the SCE
scale for the sake of homogeneity with the previous data. The supporting
saltBu4NPF6 (ACROS Organics) was dried over
P2O5 and activated overnight under vacuum at
80 °C before use. Acetonitrile was distilled from CaH2 under argon and kept over molecular sieves.
DFT Calculations
DFT calculations of structures and
PE profiles of neutral 1 and of its cation radical 1•+ along the redundant coordinate l(N–Si), including Tomasi’s polarized continuum
model of acetonitrile solvation (PCM,[59] as implemented in Gaussian 03),[60] were
carried out (on HF/6-311G preoptimized structures) using the B3LYP
hybrid functional with Lanl2DZ basis set that has been previously
shown to provide a good accounting for the experimental features in
sila- and germatranes.[12,41] In comparison to PM2, it provides
equally chemically sound results at much shorter computation time.
The absence of imaginary vibration frequencies was shown at the same
level for the structures obtained as global minima.
X-ray Structure
Determination
For X-ray structure analyses
the crystals were mounted onto the tip of glass fibers, and data collection
was performed with a BRUKER-AXS SMART APEX CCD diffractometer using
graphite-monochromated Mo Kα radiation (0.71073 Å). The
data were reduced to Fo2 and
corrected for absorption effects with SAINT[61] and SADABS,[62] respectively. The structures
were solved by direct methods and refined by full-matrix least-squares
methods (SHELXL97).[63] If not noted otherwise,
all non-hydrogen atoms were refined with anisotropic displacement
parameters and all hydrogen atoms were located in calculated positions
to correspond to standard bond lengths and angles. Crystallographic
data (excluding structure factors) for the structures of compounds 1a, 2a, -8, and -8 reported in this paper have been deposited with the Cambridge Crystallographic
Data Center as supplementary publication nos. CCDC 1477576 (1a), 1477575 (2a), 1477577 (-8), and 1477574 (-8); data can be obtained free of charge at http://www.ccdc.cam.ac.uk/products/csd/request/. Figures of solid-state molecular structures were generated using
Ortep-3 as implemented in WINGX[64] and rendered
using POV-Ray 3.6.[65]
Tris(trimethylsilyl)germylsilatrane
(1a)
A mixture of tetrakis(trimethylsilyl)germane
(1.00 g, 2.74 mmol)
and KOBu (316 mg, 2.82 mmol) was dissolved
in THF (5 mL). The solution turned yellow immediately. After 2 h NMR
spectroscopy confirmed the formation of tris(trimethylsilyl)germylpotassium.
After THF was removed by putting the sample under vacuum, the germanide
was dissolved in toluene (10 mL), whereupon the solution was added
dropwise over 1 h to a stirred slurry of silatranyl triflate (973
mg, 3.01 mmol) in toluene (5 mL) at −85 °C. After 12 h
toluene was removed under vacuum and the obtained residue was dissolved
in pentane and filtered. The colorless solid obtained (870 mg crude
yield) was found to be a mixture of tetrakis(trimethylsilyl)germane
and tris(trimethylsilyl)germylsilatrane (1a). Due to
the thermal sensitivity of 1a, it was not possible to
remove tetrakis(trimethylsilyl)germane by sublimation. Crystallization
from pentane yielded 1a (350 mg, 27%) as colorless crystals.
Mp: 170–174 °C. NMR (δ in ppm): 1H (CDCl3) 3.67 (t, J = 5.3 Hz, 6H, OCH2), 2.73 (t, J = 5.3 Hz, 6H, NCH2), 0.19 (s, 27H, (CH3)3Si); 13C (CDCl3) 58.56 (OCH2), 52.16 (NCH2), 2.80 (Me3Si–Ge); 29Si (CDCl3) −5.6 (Me3Si), −53.2 (SiO3). MS (70 eV) m/z (%): 467(2) [M+], 452(1)
[M+ – Me], 278(3) [M+ – N(CH2CH2O)3Si – Me], 219(1) [(Me3Si)2Ge+ – H], 174(100) [N(CH2CH2O)3Si+], 73(9) [SiMe3+]. Anal. Calcd for C15H39GeNO3Si4: C, 38.62, H, 8.43, N, 3.00. Found:
C, 38.99, H, 8.22, N 3.05.
Authors: Kirill V Zaitsev; Andrei V Churakov; Oleg Kh Poleshchuk; Yuri F Oprunenko; Galina S Zaitseva; Sergey S Karlov Journal: Dalton Trans Date: 2014-05-14 Impact factor: 4.390
Authors: A B Trofimov; V G Zakrzewski; O Dolgounitcheva; J V Ortiz; V F Sidorkin; E F Belogolova; M Belogolov; V A Pestunovich Journal: J Am Chem Soc Date: 2005-01-26 Impact factor: 15.419
Authors: Mohammad Aghazadeh Meshgi; Kirill V Zaitsev; Mikhail V Vener; Andrei V Churakov; Judith Baumgartner; Christoph Marschner Journal: ACS Omega Date: 2018-08-31
Authors: Mohammad Aghazadeh Meshgi; Alexander Pöcheim; Judith Baumgartner; Viatcheslav V Jouikov; Christoph Marschner Journal: Molecules Date: 2021-01-05 Impact factor: 4.411