| Literature DB >> 28072546 |
Che Chen1, Nathan Youngblood1, Ruoming Peng1, Daehan Yoo1, Daniel A Mohr1, Timothy W Johnson1, Sang-Hyun Oh1, Mo Li1.
Abstract
We demonstrate the integration of a black phosphorus photodetector in a hybrid, three-dimensional architecture of silicon photonics and metallic nanoplasmonics structures. This integration approach combines the advantages of the low propagation loss of silicon waveguides, high-field confinement of a plasmonic nanogap, and the narrow bandgap of black phosphorus to achieve high responsivity for detection of telecom-band, near-infrared light. Benefiting from an ultrashort channel (∼60 nm) and near-field enhancement enabled by the nanogap structure, the photodetector shows an intrinsic responsivity as high as 10 A/W afforded by internal gain mechanisms, and a 3 dB roll-off frequency of 150 MHz. This device demonstrates a promising approach for on-chip integration of three distinctive photonic systems, which, as a generic platform, may lead to future nanophotonic applications for biosensing, nonlinear optics, and optical signal processing.Entities:
Keywords: Silicon photonics; black phosphorus; extraordinary optical transmission; nanogap; photodetector; plasmonics
Year: 2017 PMID: 28072546 DOI: 10.1021/acs.nanolett.6b04332
Source DB: PubMed Journal: Nano Lett ISSN: 1530-6984 Impact factor: 11.189