| Literature DB >> 27980928 |
Nadav Amdursky1, Lior Sepunaru2, Sara Raichlin1, Israel Pecht3, Mordechai Sheves4, David Cahen2.
Abstract
Electron transfer (ET) proteins are biomolecules with specific functions, selected by evolution. As such they are attractive candidates for use in potential bioelectronic devices. The blue copper protein azurin (Az) is one of the most-studied ET proteins. Traditional spectroscopic, electrochemical, and kinetic methods employed for studying ET to/from the protein's Cu ion have been complemented more recently by studies of electrical conduction through a monolayer of Az in the solid-state, sandwiched between electrodes. As the latter type of measurement does not require involvement of a redox process, it also allows monitoring electronic transport (ETp) via redox-inactive Az-derivatives. Here, results of macroscopic ETp via redox-active and -inactive Az derivatives, i.e., Cu(II) and Cu(I)-Az, apo-Az, Co(II)-Az, Ni(II)-Az, and Zn(II)-Az are reported and compared. It is found that earlier reported temperature independence of ETp via Cu(II)-Az (from 20 K until denaturation) is unique, as ETp via all other derivatives is thermally activated at temperatures >≈200 K. Conduction via Cu(I)-Az shows unexpected temperature dependence >≈200 K, with currents decreasing at positive and increasing at negative bias. Taking all the data together we find a clear compensation effect of Az conduction around the Az denaturation temperature. This compensation can be understood by viewing the Az binding site as an electron trap, unless occupied by Cu(II), as in the native protein, with conduction of the native protein setting the upper transport efficiency limit.Entities:
Keywords: compensation effect; electron transport; temperature dependence
Year: 2015 PMID: 27980928 PMCID: PMC5115354 DOI: 10.1002/advs.201400026
Source DB: PubMed Journal: Adv Sci (Weinh) ISSN: 2198-3844 Impact factor: 16.806
Figure 1ln(J) versus 1000/T of Cu‐Az, Ni‐Az, Co‐Az, and Zn‐Az at −50 mV bias. The data points in the lower left corner represent the irreversible drop in current, which are ascribed to denaturation of the proteins. The top contacts were LOFO Au pads.
Figure 4a) I–V characteristics of Cu(I) and Cu(II) Az junctions at RT. b) I–V for Cu(II) (top) and Cu(I) (bottom) Az junctions at several temperatures. c) ln(J) versus 1000/T plots for Cu(I) Az junctions at several indicated bias voltages. The table presents the activation energies of Cu(I) Az at the different measured biases (calculated by fitting to the Arrhenius equation). The scheme illustrates the electrical circuit of the molecular junction. The top contacts for the results in panel ) are Hg, b) Au (LOFO), and c) both Au (LOFO) and Hg.
Solid‐state ETp via Az
| Measuring system | Variant [force] | Activation energy [meV] | Transition to temp. dependence, | Current density @ | Denaturation temperature | |
|---|---|---|---|---|---|---|
| Macroscopic electrodes | Cu(II)[[qv: 7e]] | 0 | None | 2.3 ± 0.4 × 10−6 | 360 | |
| Deuterated Cu(II)[[qv: 7d]] | 80 ± 18 | 180 | 2.7 ± 0.3 × 10−7 | – | ||
| Cu(I) | 21 ± 9 | 200 | 2.0 ± 0.8 × 10−6
| – | ||
| Ni(II) | 20 ± 12 | 180 | 1.0 ± 0.3 × 10−6 | 360 | ||
| Co(II) | 70 ± 7 | 190 | 3.1 ± 0.6 × 10−7 | 360 | ||
| Zn(II) | 150 ± 22 | 205 | 5.1 ± 1.0 × 10−8 | 358 | ||
| Metal‐free (apo)[[qv: 7e]] | 320 ± 31 | 205 | 2.8 ± 0.8 × 10−8 | 358 | ||
| Deuterated metal‐free | 220 ± 37 | 195 | 4.1 ± 1.3 × 10−8 | – | ||
| CP–AFM[[qv: 7h]] | Cu(II) | [6 nN] | 0 | None | 5.8 ± 2.6 × 10−10 | 372 |
| [9 nN] | 1010 ± 180 | 310 | 1.6 ± 0.6 × 10−9 | – | ||
| [12 nN] | 1080 ± 205 | 310 | 2.7 ± 1.1 × 10−9 | – | ||
| [6 nN] | 520 ± 115 | – | 1.4 ± 0.7 × 10−11
| – | ||
| Metal‐free | [9 nN] | 490 ± 120 | − | 6.2 ± 3.4 × 10−11
| 368 | |
| [12 nN] | 500 ± 105 | − | 3.9 ± 1.9 × 10−10
| – | ||
a)The current densities, measured with the macroscopic electrodes, are those at −0.05 V; the units are A cm−2. CP–AFM current densities are in A nm−2 (a detailed explanation for the determination of the AFM tip surface area can be found in ref. [[qv: 7h]] and were measured at +0.5 V because of the poor S/N at lower bias voltages in measurements with nanoscopic contact area;
b)We give here the temperatures where, upon heating, the current drops irreversibly. The thermal denaturation temperature of Cu(II)Az in solution is around 355 K and those of the other derivatives range between 355 and 365 K.12 We ascribe the higher temperatures seen in the nanoscopic (CP–AFM) than in the macroscopic experiments to differences between the two setups, where uniform temperatures are much harder to achieve in the SPM than in the probe station;
c)We present the values for Cu(I), measured at −0.05 V, but as discussed later, and unlike the case for the other Az derivatives, the values for Cu(I) differ, consistently, between negative and positive bias;
d)The temperature range of the CP–AFM measurements is 250–370 K, and, therefore, we could not decrease the temperature enough to reach T c for apo‐Az;
e)These are values at 278 K because as this was the lowest temperature at which the CP–AFM data were (and could be) measured.
Figure 2ln(J) versus 1000/T plots of holo‐Az, apo‐Az, and their deuterated forms at −50 mV bias. The top contacts were Hg drops.
Figure 3Summary of all temperature‐dependent current data, plotted as the natural logarithm of the current density [A cm−2] at −50 mV applied bias versus 1000/T [K−1]. It can be seen that the data fit the compensation or MNR. Cu(II)‐Az is included even though its ETp is not thermally activated. T MN is the characteristic compensation temperature, found for Az, and is ≈365 K. J MN is the (temperature‐independent) current density @ −50 mV through the Cu(II)‐Az junction. Data are from experiments with Au (LOFO) and Hg top contacts. The error bars for the various variants can be observed in Figures 1 and 2.
Figure 5Schematic cross‐section of the experimental setup: the Az molecules are oriented and covalently bound to the substrate via the specific (Cys3 or Cys26) thiol bridges. Because of this all molecules are oriented in the same way with respect to the substrate and the top electrode (although not necessarily in the “soldiers‐on‐a‐parade” manner shown). The highly conducting Si substrate is grounded and voltage is applied to the Au or Hg contact.