| Literature DB >> 27874223 |
Peng Yu1, Junhao Lin2, Linfeng Sun3, Quang Luan Le1, Xuechao Yu4, Guanhui Gao5, Chuang-Han Hsu6, Di Wu6, Tay-Rong Chang7, Qingsheng Zeng1, Fucai Liu1, Qi Jie Wang4, Horng-Tay Jeng7,8, Hsin Lin6, Achim Trampert5, Zexiang Shen3, Kazu Suenaga2, Zheng Liu1.
Abstract
A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2 (WSe2(1-x) Te2x , where x = 0%-100%). The optical bandgaps of the WSe2(1-x) Te2x monolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.Entities:
Keywords: 2D materials; band gap; field-effect transistor; metal; semiconductors
Year: 2016 PMID: 27874223 DOI: 10.1002/adma.201603991
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849