| Literature DB >> 27830701 |
Abstract
Electrons ejected from atoms and subsequently driven to high energies in strong laser fields enable techniques from attosecond pulse generation to imaging with rescattered electrons. Analogous processes govern strong-field electron emission from nanostructures, where long wavelength radiation and large local field enhancements hold the promise for producing electrons with substantially higher energies, allowing for higher resolution time-resolved imaging. Here we report on the use of single-cycle terahertz pulses to drive electron emission from unbiased nano-tips. Energies exceeding 5 keV are observed, substantially greater than previously attained at higher drive frequencies. Despite large differences in the magnitude of the respective local fields, we find that the maximum electron energies are only weakly dependent on the tip radius, for 10 nm<R<1,000 nm. Due to the single-cycle nature of the field, the high-energy electron emission is predicted to be confined to a single burst, potentially enabling a variety of applications.Entities:
Year: 2016 PMID: 27830701 PMCID: PMC5109587 DOI: 10.1038/ncomms13405
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Figure 1Terahertz-induced field emission from tips of different radii.
(a) SEM images of the five tungsten tips used to produce the data shown in b–f. The lower panel shows tips before terahertz exposure. The upper panel shows tips, which have been exposed to over 100,000 shots with a peak terahertz field of 450 kV cm−1. From left to right, the tip radii are R≃20, 100, 200, 400 and 800 nm. The white horizontal scale bar has a length of 5 μm. The angular orientations of the tips in the upper and lower panes are not identical. Aside from small carbonaceous patches that form due to the attraction of gaseous background molecules to the transiently charged tips, only the sharpest tip shows any apparent terahertz-induced modification of the tungsten surface. (b) Electron yield as a function of peak terahertz field strength for tips with radii of R≃100 nm (blue) and R≃800 nm (orange). (c) Electron yield versus retarding voltage (data points) and smooth (eighth-order polynomial) fits to those data (solid lines) for the R≃100 nm (blue) and R≃800 nm (orange) tips. The data were collected using different terahertz field strengths (∼180 and ∼270 kV cm−1 for the 100 and 800 nm tips, respectively) to generate spectra with similar cutoff energies, ∼4 keV. (d) Energy distributions derived from the smooth fits to the yield data shown in c. (e) Measured (filled circles) and calculated (solid curve) electron cutoff energy as a function of tip radius for a fixed incident terahertz field strength F≃180 kV cm−1. (f) High-energy cutoff of the electron energy spectrum as a function of incident terahertz field strength, for tips with R≃20 nm (filled blue squares), 100 nm (filled brown diamonds), 200 nm (filled magenta triangles), 400 nm (black asterisks) and 800 nm (filled orange circles).
Figure 2Experimental apparatus schematic and terahertz field characteristics.
(a) Terahertz pulses are produced via optical rectification, at a 15 Hz repetition rate, using 790 nm, 150 fs and 20 mJ pump laser pulses in a tilted pulse-front configuration. The terahertz pulses pass through two wire-grid polarizers, which serve as a variable attenuator. Two off-axis parabolic mirrors focus the terahertz radiation on a single wire tip (identified by a red circle in the main figure and side view inset) positioned at the centre of a retarding potential electron energy analyser (see side view inset) near the centre of the vacuum chamber. A precision translation stage allows the positioning of different tips in the terahertz focus, allowing us to maintain identical experimental conditions for measurements from different tips without breaking vacuum. (b) Terahertz electric field (main figure) obtained from photoelectron streaking measurements41 and corresponding frequency spectrum (inset) obtained by Fourier transforming the time-domain data shown in the main figure.
Figure 3Energy distributions versus incident terahertz field strength.
(a) Energy distribution of electrons emitted from a tip with R≃130 nm for different incident terahertz fields: 40 kV cm−1 (blue); 80 kV cm−1 (brown); 110 kV cm−1 (magenta); 150 kV cm−1 (black); and 190 kV cm−1 (orange). Lines connecting data points are provided to guide the eye. The total yield at each field has been normalized to unity. (b) High-energy cutoff of electron energy spectra as a function of incident terahertz field strength for the same tip used to produce the data shown in a. Solid orange circles are data and the solid blue line is the result of the simulation described in the text.