Literature DB >> 27704774

Characterization of Few-Layer 1T' MoTe2 by Polarization-Resolved Second Harmonic Generation and Raman Scattering.

Ryan Beams1, Luiz Gustavo Cançado2, Sergiy Krylyuk1,3, Irina Kalish1, Berç Kalanyan1, Arunima K Singh1, Kamal Choudhary1, Alina Bruma1, Patrick M Vora4, Francesca Tavazza1, Albert V Davydov1, Stephan J Stranick1.   

Abstract

We study the crystal symmetry of few-layer 1T' MoTe2 using the polarization dependence of the second harmonic generation (SHG) and Raman scattering. Bulk 1T' MoTe2 is known to be inversion symmetric; however, we find that the inversion symmetry is broken for finite crystals with even numbers of layers, resulting in strong SHG comparable to other transition-metal dichalcogenides. Group theory analysis of the polarization dependence of the Raman signals allows for the definitive assignment of all the Raman modes in 1T' MoTe2 and clears up a discrepancy in the literature. The Raman results were also compared with density functional theory simulations and are in excellent agreement with the layer-dependent variations of the Raman modes. The experimental measurements also determine the relationship between the crystal axes and the polarization dependence of the SHG and Raman scattering, which now allows the anisotropy of polarized SHG or Raman signal to independently determine the crystal orientation.

Entities:  

Keywords:  Raman scattering; crystal symmetry; optical spectroscopy; second harmonic generation; two-dimensional material

Year:  2016        PMID: 27704774      PMCID: PMC5542881          DOI: 10.1021/acsnano.6b05127

Source DB:  PubMed          Journal:  ACS Nano        ISSN: 1936-0851            Impact factor:   15.881


  35 in total

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