| Literature DB >> 27667099 |
Bing Han1, Qiang Peng1, Ruopeng Li1, Qikun Rong1, Yang Ding1, Eser Metin Akinoglu2,3, Xueyuan Wu4, Xin Wang5, Xubing Lu1, Qianming Wang6, Guofu Zhou5, Jun-Ming Liu1,7, Zhifeng Ren8, Michael Giersig2,9, Andrzej Herczynski4, Krzysztof Kempa1,4, Jinwei Gao1.
Abstract
An ideal network window electrode for photovoltaic applications should provide an optimal surface coverage, a uniform current density into and/or from a substrate, and a minimum of the overall resistance for a given shading ratio. Here we show that metallic networks with quasi-fractal structure provides a near-perfect practical realization of such an ideal electrode. We find that a leaf venation network, which possesses key characteristics of the optimal structure, indeed outperforms other networks. We further show that elements of hierarchal topology, rather than details of the branching geometry, are of primary importance in optimizing the networks, and demonstrate this experimentally on five model artificial hierarchical networks of varied levels of complexity. In addition to these structural effects, networks containing nanowires are shown to acquire transparency exceeding the geometric constraint due to the plasmonic refraction.Entities:
Year: 2016 PMID: 27667099 PMCID: PMC5052667 DOI: 10.1038/ncomms12825
Source DB: PubMed Journal: Nat Commun ISSN: 2041-1723 Impact factor: 14.919
Figure 1Optoelectronic performance and morphology of the networks and ITO films.
(a) T versus Rsq; T is measured at 550 nm vacuum wavelength. The expected analytical dependencies (equation (8)) for two figures of merit F=1,200 and 700 are shown as the blue and red dashed lines, respectively. The left inset shows the SEM image of the QF network based on the leaf venation (scale bar, 500 μm), and the right inset is the SEM image of the C network (scale bar, 100 μm). (b) T versus wavelength for QF, C and ITO films. (c) Schematic of the contact resistance measurement. (d) SEM image of the cross-section of the PV cell. The scale bar is 200 μm. (e) I–V characteristics of the PV cells under AM1.5 illumination: QF (red line with circles); C (black line with squares); and ITO (blue line with triangles). The inset shows a plot of the corresponding series resistance Rs. Two optical images of the PV cells are also shown in this inset; the cell based on the QF network has a clearly visible leaf venation structure. The dark circle (0.196 cm2) in the middle of each cell is the Ag back reflector.
Figure 2Morphology of the model networks.
Single-order networks: (a) C network (R1; SEM image; scale bar, 200 μm); (b) large-scale simple grid network (P1; optical image; scale bar, 200 μm); and (c) ultrafine scale grid network (UP1; SEM image; scale bar, 5 μm). Two-order random networks: (d) C-based network (R2; SEM image; scale bar, 30 μm). (e) High (atomic)-resolution transmission electron microscopy images of a single NW. Inset shows an X-ray diffraction pattern. Scale bar, 10 nm. (f) High-resolution SEM image of the R2 network at the tilt angle of ∼60°. Scale bar, 2 μm. Inset: details of the ribbon–NW contact (scale bar, 400 nm). (g) Two-order periodic network (P2; optical image; scale bar, 200 μm). (h) Three-order periodic network (M3) obtained by adding NW to the P2 network. Scale bar, 200 μm. (i) Optical image of the quasi fractal QF network. Scale bar, 500 μm.
Figure 3Optoelectronic properties and morphology of the hierarchical networks.
(a) Measured Rsq and T of the C-based networks (black solid squares) and the corresponding R2 networks (red solid circles). The numbers at the data points are the corresponding T values in %. (b) SEM images of the C-based networks, with increasing NW density (C network: no NWs; S1: 0.125 mg ml−1; S2: 0.25 mg ml−1; and S3: 0.5 mg ml−1). The scale bars are all 10 μm. (c) Measured Rcont for hierarchical structures of various orders (each pair of symbols represents the same order). Blue circles represent random (R1 and R2) and red triangles periodic (P1 and P2) networks. The third-order networks are M3 (red circle) and QF (green square). (d) Transmittance of the ultrafine scale grid network (UP1) shown in Fig. 2c: experimental (solid blue line); simulated (dashed red line); and Tg (solid black). The inset shows maps of the x-component of the electric field near a single nanowire of the ultrafine network at various times, within the period T. The uncertainty in (a) and (c) comes from the non-uniformity of the film, and is calculated as a standard deviation.