| Literature DB >> 27649044 |
Tianshuo Zhao1, Earl D Goodwin1, Jiacen Guo1, Han Wang1, Benjamin T Diroll1, Christopher B Murray1, Cherie R Kagan1.
Abstract
Advanced architectures are required to further improve the performance of colloidal PbS heterojunction quantum dot solar cells. Here, we introduce a CdI2-treated CdSe quantum dot buffer layer at the junction between ZnO nanoparticles and PbS quantum dots in the solar cells. We exploit the surface- and size-tunable electronic properties of the CdSe quantum dots to optimize its carrier concentration and energy band alignment in the heterojunction. We combine optical, electrical, and analytical measurements to show that the CdSe quantum dot buffer layer suppresses interface recombination and contributes additional photogenerated carriers, increasing the open-circuit voltage and short-circuit current of PbS quantum dot solar cells, leading to a 25% increase in solar power conversion efficiency.Entities:
Keywords: CdSe; PbS; buffer layer; interface; quantum dot; solar cell
Year: 2016 PMID: 27649044 DOI: 10.1021/acsnano.6b03175
Source DB: PubMed Journal: ACS Nano ISSN: 1936-0851 Impact factor: 15.881