Literature DB >> 27540753

Lateral Versus Vertical Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Thermodynamic Insight into MoS2.

Shun-Li Shang1, Greta Lindwall1, Yi Wang1, Joan M Redwing1, Tim Anderson2, Zi-Kui Liu1.   

Abstract

Unprecedented interest has been spurred recently in two-dimensional (2D) layered transition metal dichalcogenides (TMDs) that possess tunable electronic and optical properties. However, synthesis of a wafer-scale TMD thin film with controlled layers and homogeneity remains highly challenging due mainly to the lack of thermodynamic and diffusion knowledge, which can be used to understand and design process conditions, but falls far behind the rapidly growing TMD field. Here, an integrated density functional theory (DFT) and calculation of phase diagram (CALPHAD) modeling approach is employed to provide thermodynamic insight into lateral versus vertical growth of the prototypical 2D material MoS2. Various DFT energies are predicted from the layer-dependent MoS2, 2D flake-size related mono- and bilayer MoS2, to Mo and S migrations with and without graphene and sapphire substrates, thus shedding light on the factors that control lateral versus vertical growth of 2D islands. For example, the monolayer MoS2 flake in a small 2D lateral size is thermodynamically favorable with respect to the bilayer counterpart, indicating the monolayer preference during the initial stage of nucleation; while the bilayer MoS2 flake becomes stable with increasing 2D lateral size. The critical 2D flake-size of phase stability between mono- and bilayer MoS2 is adjustable via the choice of substrate. In terms of DFT energies and CALPHAD modeling, the size dependent pressure-temperature-composition (P-T-x) growth windows are predicted for MoS2, indicating that the formation of MoS2 flake with reduced size appears in the middle but close to the lower T and higher P "Gas + MoS2" phase region. It further suggests that Mo diffusion is a controlling factor for MoS2 growth owing to its extremely low diffusivity compared to that of sulfur. Calculated MoS2 energies, Mo and S diffusivities, and size-dependent P-T-x growth windows are in good accord with available experiments, and the present data provide quantitative insight into the controlled growth of 2D layered MoS2.

Entities:  

Keywords:  Molybdenum disulfide; Mo−S phase diagram; controlled synthesis; first-principles calculations; thermodynamic modeling

Year:  2016        PMID: 27540753     DOI: 10.1021/acs.nanolett.6b02443

Source DB:  PubMed          Journal:  Nano Lett        ISSN: 1530-6984            Impact factor:   11.189


  10 in total

1.  Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire.

Authors:  Lei Liu; Taotao Li; Liang Ma; Weisheng Li; Si Gao; Wenjie Sun; Ruikang Dong; Xilu Zou; Dongxu Fan; Liangwei Shao; Chenyi Gu; Ningxuan Dai; Zhihao Yu; Xiaoqing Chen; Xuecou Tu; Yuefeng Nie; Peng Wang; Jinlan Wang; Yi Shi; Xinran Wang
Journal:  Nature       Date:  2022-05-04       Impact factor: 49.962

2.  A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides.

Authors:  Yifan Nie; Chaoping Liang; Pil-Ryung Cha; Luigi Colombo; Robert M Wallace; Kyeongjae Cho
Journal:  Sci Rep       Date:  2017-06-07       Impact factor: 4.379

Review 3.  Synthesis of 2D transition metal dichalcogenides by chemical vapor deposition with controlled layer number and morphology.

Authors:  Jiawen You; Md Delowar Hossain; Zhengtang Luo
Journal:  Nano Converg       Date:  2018-09-28

4.  Growth Mechanisms and Electronic Properties of Vertically Aligned MoS2.

Authors:  Chen Stern; Shmuel Grinvald; Moshe Kirshner; Ofer Sinai; Mark Oksman; Hadas Alon; Oren E Meiron; Maya Bar-Sadan; Lothar Houben; Doron Naveh
Journal:  Sci Rep       Date:  2018-11-07       Impact factor: 4.379

Review 5.  Chemical vapor deposition of 2D materials: A review of modeling, simulation, and machine learning studies.

Authors:  Sayan Bhowmik; Ananth Govind Rajan
Journal:  iScience       Date:  2022-01-29

6.  Tuning the orientation of few-layer MoS2 films using one-zone sulfurization.

Authors:  Michaela Sojková; Karol Vegso; Nada Mrkyvkova; Jakub Hagara; Peter Hutár; Alica Rosová; Mária Čaplovičová; Ursula Ludacka; Viera Skákalová; Eva Majková; Peter Siffalovic; Martin Hulman
Journal:  RSC Adv       Date:  2019-09-19       Impact factor: 3.361

7.  Layer-by-layer epitaxy of multi-layer MoS2 wafers.

Authors:  Qinqin Wang; Jian Tang; Xiaomei Li; Jinpeng Tian; Jing Liang; Na Li; Depeng Ji; Lede Xian; Yutuo Guo; Lu Li; Qinghua Zhang; Yanbang Chu; Zheng Wei; Yanchong Zhao; Luojun Du; Hua Yu; Xuedong Bai; Lin Gu; Kaihui Liu; Wei Yang; Rong Yang; Dongxia Shi; Guangyu Zhang
Journal:  Natl Sci Rev       Date:  2022-04-21       Impact factor: 23.178

8.  The Combination of MoS2/WO3 and Its Adsorption Properties of Methylene Blue at Low Temperatures.

Authors:  Yifan Zheng; Jingjing Wang; Yedan Wang; Huan Zhou; Zhiying Pu; Qian Yang; Wanzhen Huang
Journal:  Molecules       Date:  2019-12-18       Impact factor: 4.411

9.  Epitaxial Growth of Wafer-Scale Molybdenum Disulfide/Graphene Heterostructures by Metal-Organic Vapor-Phase Epitaxy and Their Application in Photodetectors.

Authors:  Anh Tuan Hoang; Ajit K Katiyar; Heechang Shin; Neeraj Mishra; Stiven Forti; Camilla Coletti; Jong-Hyun Ahn
Journal:  ACS Appl Mater Interfaces       Date:  2020-09-17       Impact factor: 9.229

10.  Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization.

Authors:  Salvatore E Panasci; Antal Koos; Emanuela Schilirò; Salvatore Di Franco; Giuseppe Greco; Patrick Fiorenza; Fabrizio Roccaforte; Simonpietro Agnello; Marco Cannas; Franco M Gelardi; Attila Sulyok; Miklos Nemeth; Béla Pécz; Filippo Giannazzo
Journal:  Nanomaterials (Basel)       Date:  2022-01-06       Impact factor: 5.076

  10 in total

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