| Literature DB >> 27383739 |
Xin Rong1, Xinqiang Wang2,3, Sergey V Ivanov4, Xinhe Jiang1, Guang Chen1, Ping Wang1, Weiying Wang1, Chenguang He1, Tao Wang1, Tobias Schulz5, Martin Albrecht5, Valentin N Jmerik4, Alexey A Toropov4, Viacheslav V Ratnikov4, Vladimir I Kozlovsky6,7, Victor P Martovitsky6, Peng Jin8, Fujun Xu1, Xuelin Yang1, Zhixin Qin1, Weikun Ge1, Junjie Shi1, Bo Shen9,10.
Abstract
Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.Keywords: e-beam pumping; high output power; mid-UV light sources; molecular beam epitaxy; quasi-2D GaN
Year: 2016 PMID： 27383739 DOI： 10.1002/adma.201600990
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849