| Literature DB >> 27325910 |
Yvonne B Gerbig1, Chris A Michaels2, Robert F Cook2.
Abstract
The pressure induced phase transitions of crystalline Si films were studied in situ under a Berkovich probe using a Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in the nucleation and growth of high-pressure phases and, in contrast to earlier reports, indicate that pressure release is not a precondition for transformation to high pressure phases.Entities:
Keywords: Nanoindentation; Phase transitions; Raman spectroscopy; Silicon
Year: 2016 PMID: 27325910 PMCID: PMC4908827 DOI: 10.1016/j.scriptamat.2016.04.007
Source DB: PubMed Journal: Scr Mater ISSN: 1359-6462 Impact factor: 5.611