Literature DB >> 10045340

Raman scattering in metallic Si and Ge up to 50 GPa.

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Abstract

Entities:  

Year:  1992        PMID： 10045340     DOI： 10.1103/PhysRevLett.68.2232

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN： 0031-9007            Impact factor:   9.161


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  3 in total

1.  In situ spectroscopic study of the plastic deformation of amorphous silicon under non-hydrostatic conditions induced by indentation.

Authors:  Y B Gerbig; C A Michaels; J E Bradby; B Haberl; R F Cook
Journal:  Phys Rev B Condens Matter Mater Phys       Date:  2015-12-17

2.  In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films.

Authors:  Yvonne B Gerbig; Chris A Michaels; Robert F Cook
Journal:  Scr Mater       Date:  2016-04-19       Impact factor: 5.611

3.  Probing the coupling between the components in a graphene-mesoporous germanium nanocomposite using high-pressure Raman spectroscopy.

Authors:  Denis Machon; Stéphanie Sauze; Richard Arès; Abderraouf Boucherif
Journal:  Nanoscale Adv       Date:  2021-03-10
  3 in total

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