| Literature DB >> 27273791 |
Yun Xu1, Yi Wen2, Rob Grote1, Jake Amoroso3, Lindsay Shuller Nickles2, Kyle S Brinkman1.
Abstract
The hollandite structure is a promising crystalline host for Cs immobilization. A series of Ga-doped hollandite BaxCsyGa2x+yTi8-2x-yO16 (x = 0, 0.667, 1.04, 1.33; y = 1.33, 0.667, 0.24, 0) was synthesized through a solid oxide reaction method resulting in a tetragonal hollandite structure (space group I4/m). The lattice parameter associated with the tunnel dimension was found to increases as Cs substitution in the tunnel increased. A direct investigation of cation mobility in tunnels using electrochemical impedance spectroscopy was conducted to evaluate the ability of the hollandite structure to immobilize cations over a wide compositional range. Hollandite with the largest tunnel size and highest aspect ratio grain morphology resulting in rod-like microstructural features exhibited the highest ionic conductivity. The results indicate that grain size and optimized Cs stoichiometry control cation motion and by extension, the propensity for Cs release from hollandite.Entities:
Year: 2016 PMID: 27273791 PMCID: PMC4895209 DOI: 10.1038/srep27412
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Perspective view of hollandite along [001] direction.
Calculated (CASTEP calculations with GGA-PBE and ultra-soft pseudopotentials) enthalpies of the selected compositions.
| Compositions | Formation Enthalpy (kJ/mol) |
|---|---|
| Ba1.33Ga2.66Ti5.34O16 | −109.6 |
| Ba0.667Cs0.667Ga2Ti6O16 | −133.9 |
| Cs1.33Ga1.33Ti6.67O16 | −140.8 |
Figure 2(a) XRD patterns of the synthesized hollandite containing different Cs levels with fixed A site occupancy of 1.33/2. *Indicates secondary phase detected. (b) Evolution of lattice parameters versus Cs content: black lines and points are lattice parameter a; red lines and points are lattice parameter c.
Figure 3SEM-Backscattered Electron micrograph of the sintered pallets at magnification of 300X, (a) Ba1.33Cs0Ga2.32Ti5.68O16; (b) Ba1.04Cs0.24Ga2.32Ti5.68O16; (c) Ba0.667Cs0.667Ga2Ti6O16. (d) Cs1.33Ga1.33Ti6.67O16.
Target and measured hollandite compositions based on semi-quantitative measurement by SEM-EDX (normalized to Ti) and ICP-MS and density ρ of sintered pellets.
| Target composition | EDX composition | ICP-MS composition | ρa | ρt | ρa/ρt |
|---|---|---|---|---|---|
| Ba1.33Cs0Ga2.66Ti5.34O16 | Ba1.39Cs0Ga2.6Ti5.4O16 | Ba1.3Ga2.7Ti5.3O16.0 | 4.42 | 4.59 | 0.91 |
| Ba1.04Cs0.24Ga2.32Ti5.68O16 | Ba1.09Cs0.229Ga2.6Ti5.68O16 | Ba1.1Cs0.2Ga2.4Ti5.7O16.0 | 4.31 | 4.74 | 0.91 |
| Ba0.667Cs0.667Ga2Ti6O16 | Ba0.77Cs0.529Ga2.06Ti6O16 | Ba0.7Cs0.5Ga2.1Ti6.0O16.1 | 4.15 | 4.74 | 0.87 |
| Ba0Cs1.33Ga2.66Ti5.34O16 | Ba0Cs1.22Ga1.44Ti6.67O16 | Ba0Cs1.2Ga1.4Ti6.6O16.0 | 3.92 | 4.66 | 0.84 |
Figure 4(a) Arrhenius plots of hollandite with different Cs doping levels. Scattered points are experimental data, lines are linear fitted data. (b) Graphic depicting the variation of ionic conductivity in the hollandite structure as a function of composition (Cs concentration). Increasing Cs concentration impacts atomic structure through ring size expansion and microstructure by formation of rod-like features, which grow along c axis; both of these effects lead to an increase in conductivity with increasing Cs concentration.
Activation energies determined from the temperature dependent conductivity.
| Compositions | Ba1.33 | Ba0.66Cs0.66 | Cs1.33 |
|---|---|---|---|
| Ea (eV) | 0.99 | 0.62 | 0.78 |
XRD refinement and DFT results showing key bond distances and lattice parameters.
| Property | Composition | Calculated | Measured | Δ% |
|---|---|---|---|---|
| Average Ba/Cs-O1 (Å) | Ba1.33 | 2.76 | 2.872(6) | −3.8% |
| Ba0.667Cs0.667 | 2.85 | 2.943(4) | −3.1% | |
| Cs1.33 | 2.98 | 3.120(1) | −4.5% | |
| Average Ti/Ga-O(Å) | Ba1.33 | 0.19 | 0.194(5) | −2.1% |
| Ba0.667Cs0.667 | 0.20 | 0.190(3) | 5.3% | |
| Cs1.33 | 0.20 | 0.190(12) | 5.3% | |
| Average O1- O1 (Å) | Ba1.33 | 5.07 | ||
| Ba0.667Cs0.667 | 5.43 | |||
| Cs1.33 | 5.50 | |||
| a (Å) | Ba1.33 | 10.12 | 10.04 | 0.8% |
| Ba0.667Cs0.667 | 10.26 | 10.14 | 1.2% | |
| Cs1.33 | 10.45 | 10.26 | 1.9% | |
| c (Å) | Ba1.33 | 2.96 | 2.964 | −0.1% |
| Ba0.667Cs0.667 | 2.96 | 2.959 | 0.0% | |
| Cs1.33 | 2.96 | 2.959 | 0.0% |
The difference between measured and calculated values are represented as a percent change (Δ%). The experimental uncertainties are in parentheses.
Figure 5Nyquist plots and simulation results of (a) Ba1.33; (b) Ba0.667Cs0.667; (c) Cs1.33 at 800 °C; (d) General equivalent circuit used for simulation.