| Literature DB >> 25160888 |
Shuangyi Liu1, Andrew R Akbashev2, Xiaohao Yang3, Xiaohua Liu4, Wanlu Li4, Lukas Zhao5, Xue Li6, Alexander Couzis7, Myung-Geun Han8, Yimei Zhu8, Lia Krusin-Elbaum5, Jackie Li9, Limin Huang10, Simon J L Billinge11, Jonathan E Spanier12, Stephen O'Brien1.
Abstract
Discovery of new complex oxides that exhibit both magnetic and ferroelectric properties is of great interest for the design of functional magnetoelectrics, in which research is driven by the technologically exciting prospect of controlling charges by magnetic fields and spins by applied voltages, for sensors, 4-state logic, and spintronics. Motivated by the notion of a tool-kit for complex oxide design, we developed a chemical synthesis strategy for single-phase multifunctional lattices. Here, we introduce a new class of multiferroic hollandite Ba-Mn-Ti oxides not apparent in nature. BaMn3Ti4O14.25, designated BMT-134, possesses the signature channel-like hollandite structure, contains Mn(4+) and Mn(3+) in a 1:1 ratio, exhibits an antiferromagnetic phase transition (TN ~ 120 K) with a weak ferromagnetic ordering at lower temperatures, ferroelectricity, a giant dielectric constant at low frequency and a stable intrinsic dielectric constant of ~200 (1-100 MHz). With evidence of correlated antiferromagnetic and ferroelectric order, the findings point to an unexplored family of structures belonging to the hollandite supergroup with multifunctional properties, and high potential for developing new magnetoelectric materials.Entities:
Year: 2014 PMID: 25160888 PMCID: PMC5385805 DOI: 10.1038/srep06203
Source DB: PubMed Journal: Sci Rep ISSN: 2045-2322 Impact factor: 4.379
Figure 1Structural characterization of BMT-134 (BaMn3Ti4O14.25) (a), Synchrotron X-ray powder diffraction and PDF refinement patterns (b), crystal structure of BMT-134 projected down the c-axis, and a simple cartoon depiction of how spin and charge distribution in the lattice can cause collective polarization. (c) and (d), the atomic images obtained by spherical-aberration corrected STEM, with the zone axis along [001].
Figure 2Magnetic and electronic transport properties, and electronic structure of BMT-134.
(a), Temperature dependent magnetic susceptibility measured at 2 kOe under FC and ZFC conditions. The inset shows the inverse ZFC susceptibility with a Curie-Weiss fit; (b), magnetic hysteresis loops at 50 K, 20 K, and 1.84 K. Deviation from linearity at TN ~ 120 K and a local minimum at T ~ 42 K in χ−1 (inset) signal onset of the coupled CO-antiferromagnetic phase transition and of weak long-range order, respectively, as described in the text; (c), X-ray photoelectron spectroscopy (XPS) analysis indicating evidence of Mn3+ and Mn4+, and no evidence of Mn2+; (d), resistivity as a function of temperature ρ(T) in samples of (Ba-Ti-Mn-O) with differing Ba:Mn:Ti ratios A: 1:2:5 (BaMn2Ti5O14.5), B: 1:3:4 (BMT-134), and C: 1:4:3 (BaMn4Ti3O14). The dramatic change in character of ρ(T) in the case of BMT-134 provides additional evidence of the potential onset of a charge-ordering transition near 120 K.
Figure 3Ferroelectric and dielectric measurements of BMT-134.
Ferroelectric hysteresis measured in BMT-134 at (a) 100 K and (b) 120 K, each at a 5 Hz poling rate, exhibiting ferroelectric switching and saturation at 120 K; (c) at 160 K unambiguous switching and saturation can be observed only at a higher poling rate due to stronger charge leakage. (d) Variation in P(E) loops in the same sample using identical voltage sweep rate of 5 Hz, indicating an onset of leakage at this poling rate with temperature above ~150 K, below which ferroelectric switching and polarization saturation is observed. At 100 K and below, the value of saturation polarization for a given applied field is seen to decrease for decreasing T, presumably due to application of an insufficiently large field and incomplete poling, consistent with Landau theory for a displacive transition. (e) Frequency-dependent dielectric properties of the paraelectric phase in the ranges of 1–100 MHz and 100 Hz–1 MHz (inset) at 300 K, together with dielectric loss (shown in red).