Literature DB >> 27213756

Giant Resistive Switching via Control of Ferroelectric Charged Domain Walls.

Linze Li1,2, Jason Britson3, Jacob R Jokisaari1,2, Yi Zhang1,2, Carolina Adamo4, Alexander Melville4, Darrell G Schlom4,5, Long-Qing Chen3, Xiaoqing Pan1.   

Abstract

Controlled switching of resistivity in ferroelectric thin films is demonstrated by writing and erasing stable, nanoscale, strongly charged domain walls using an in situ transmission electron microscopy technique. The resistance can be read nondestructively and presents the largest off/on ratio (≈10(5) ) ever reported in room-temperature ferroelectric devices, opening new avenues for engineering ferroelectric thin-film devices.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords:  charged domain walls; ferroelectrics; in situ transmission electron microscopy; resistive switching

Year:  2016        PMID： 27213756     DOI： 10.1002/adma.201600160

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  5 in total

1.  Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

Authors:  Jun Jiang; Zi Long Bai; Zhi Hui Chen; Long He; David Wei Zhang; Qing Hua Zhang; Jin An Shi; Min Hyuk Park; James F Scott; Cheol Seong Hwang; An Quan Jiang
Journal:  Nat Mater       Date:  2017-11-20       Impact factor: 43.841

2.  Nonvolatile ferroelectric domain wall memory.

Authors:  Pankaj Sharma; Qi Zhang; Daniel Sando; Chi Hou Lei; Yunya Liu; Jiangyu Li; Valanoor Nagarajan; Jan Seidel
Journal:  Sci Adv       Date:  2017-06-23       Impact factor: 14.136

Review 3.  Functional Ferroic Domain Walls for Nanoelectronics.

Authors:  Pankaj Sharma; Peggy Schoenherr; Jan Seidel
Journal:  Materials (Basel)       Date:  2019-09-10       Impact factor: 3.623

4.  Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects.

Authors:  Wenda Yang; Guo Tian; Yang Zhang; Fei Xue; Dongfeng Zheng; Luyong Zhang; Yadong Wang; Chao Chen; Zhen Fan; Zhipeng Hou; Deyang Chen; Jinwei Gao; Min Zeng; Minghui Qin; Long-Qing Chen; Xingsen Gao; Jun-Ming Liu
Journal:  Nat Commun       Date:  2021-02-26       Impact factor: 14.919

5.  Nonvolatile ferroelectric domain wall memory integrated on silicon.

Authors:  Haoying Sun; Jierong Wang; Yushu Wang; Changqing Guo; Jiahui Gu; Wei Mao; Jiangfeng Yang; Yuwei Liu; Tingting Zhang; Tianyi Gao; Hanyu Fu; Tingjun Zhang; Yufeng Hao; Zhengbin Gu; Peng Wang; Houbing Huang; Yuefeng Nie
Journal:  Nat Commun       Date:  2022-07-26       Impact factor: 17.694
  5 in total

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