Literature DB >> 33637763

Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects.

Wenda Yang1, Guo Tian1, Yang Zhang2,3, Fei Xue2, Dongfeng Zheng1, Luyong Zhang1, Yadong Wang1, Chao Chen1, Zhen Fan1, Zhipeng Hou1, Deyang Chen1, Jinwei Gao1, Min Zeng1, Minghui Qin1, Long-Qing Chen2, Xingsen Gao4, Jun-Ming Liu1,3.   

Abstract

Ferroelectric topological objects provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels associated with the topological cores of quadrant vortex domain and center domain (monopole-like) states confined in high quality BiFeO3 nanoislands, abbreviated as the vortex core and the center core. We unveil via the phase-field simulation that the superfine metallic conduction channels along the center cores arise from the screening charge carriers confined at the core region, whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be reversibly created and deleted by manipulating the two topological states via electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices, e.g. nonvolatile memory.

Entities:  

Year:  2021        PMID: 33637763     DOI: 10.1038/s41467-021-21521-9

Source DB:  PubMed          Journal:  Nat Commun        ISSN: 2041-1723            Impact factor:   14.919


  23 in total

1.  Magnetotransport at domain walls in BiFeO3.

Authors:  Q He; C-H Yeh; J-C Yang; G Singh-Bhalla; C-W Liang; P-W Chiu; G Catalan; L W Martin; Y-H Chu; J F Scott; R Ramesh
Journal:  Phys Rev Lett       Date:  2012-02-09       Impact factor: 9.161

2.  Conduction at domain walls in oxide multiferroics.

Authors:  J Seidel; L W Martin; Q He; Q Zhan; Y-H Chu; A Rother; M E Hawkridge; P Maksymovych; P Yu; M Gajek; N Balke; S V Kalinin; S Gemming; F Wang; G Catalan; J F Scott; N A Spaldin; J Orenstein; R Ramesh
Journal:  Nat Mater       Date:  2009-01-25       Impact factor: 43.841

3.  Above-bandgap voltages from ferroelectric photovoltaic devices.

Authors:  S Y Yang; J Seidel; S J Byrnes; P Shafer; C-H Yang; M D Rossell; P Yu; Y-H Chu; J F Scott; J W Ager; L W Martin; R Ramesh
Journal:  Nat Nanotechnol       Date:  2010-01-10       Impact factor: 39.213

4.  Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films.

Authors:  Arnaud Crassous; Tomas Sluka; Alexander K Tagantsev; Nava Setter
Journal:  Nat Nanotechnol       Date:  2015-06-15       Impact factor: 39.213

5.  Controllable conductive readout in self-assembled, topologically confined ferroelectric domain walls.

Authors:  Ji Ma; Jing Ma; Qinghua Zhang; Renci Peng; Jing Wang; Chen Liu; Meng Wang; Ning Li; Mingfeng Chen; Xiaoxing Cheng; Peng Gao; Lin Gu; Long-Qing Chen; Pu Yu; Jinxing Zhang; Ce-Wen Nan
Journal:  Nat Nanotechnol       Date:  2018-07-23       Impact factor: 39.213

6.  Domain wall geometry controls conduction in ferroelectrics.

Authors:  R K Vasudevan; A N Morozovska; E A Eliseev; J Britson; J-C Yang; Y-H Chu; P Maksymovych; L Q Chen; V Nagarajan; S V Kalinin
Journal:  Nano Lett       Date:  2012-09-27       Impact factor: 11.189

7.  Collective magnetism at multiferroic vortex domain walls.

Authors:  Yanan Geng; N Lee; Y J Choi; S-W Cheong; Weida Wu
Journal:  Nano Lett       Date:  2012-11-14       Impact factor: 11.189

8.  Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories.

Authors:  Jun Jiang; Zi Long Bai; Zhi Hui Chen; Long He; David Wei Zhang; Qing Hua Zhang; Jin An Shi; Min Hyuk Park; James F Scott; Cheol Seong Hwang; An Quan Jiang
Journal:  Nat Mater       Date:  2017-11-20       Impact factor: 43.841

9.  Free-electron gas at charged domain walls in insulating BaTiO₃.

Authors:  Tomas Sluka; Alexander K Tagantsev; Petr Bednyakov; Nava Setter
Journal:  Nat Commun       Date:  2013       Impact factor: 14.919

10.  Nonvolatile ferroelectric domain wall memory.

Authors:  Pankaj Sharma; Qi Zhang; Daniel Sando; Chi Hou Lei; Yunya Liu; Jiangyu Li; Valanoor Nagarajan; Jan Seidel
Journal:  Sci Adv       Date:  2017-06-23       Impact factor: 14.136

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  2 in total

1.  Exploring far-from-equilibrium ultrafast polarization control in ferroelectric oxides with excited-state neural network quantum molecular dynamics.

Authors:  Thomas Linker; Ken-Ichi Nomura; Anikeya Aditya; Shogo Fukshima; Rajiv K Kalia; Aravind Krishnamoorthy; Aiichiro Nakano; Pankaj Rajak; Kohei Shimmura; Fuyuki Shimojo; Priya Vashishta
Journal:  Sci Adv       Date:  2022-03-23       Impact factor: 14.136

2.  Nonvolatile ferroelectric domain wall memory integrated on silicon.

Authors:  Haoying Sun; Jierong Wang; Yushu Wang; Changqing Guo; Jiahui Gu; Wei Mao; Jiangfeng Yang; Yuwei Liu; Tingting Zhang; Tianyi Gao; Hanyu Fu; Tingjun Zhang; Yufeng Hao; Zhengbin Gu; Peng Wang; Houbing Huang; Yuefeng Nie
Journal:  Nat Commun       Date:  2022-07-26       Impact factor: 17.694

  2 in total

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