Literature DB >> 27168054

Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors.

Binghao Wang1,2, Li Zeng3, Wei Huang1, Ferdinand S Melkonyan1, William C Sheets4, Lifeng Chi2, Michael J Bedzyk3, Tobin J Marks1,3, Antonio Facchetti1,4.   

Abstract

Owing to high carrier mobilities, good environmental/thermal stability, excellent optical transparency, and compatibility with solution processing, thin-film transistors (TFTs) based on amorphous metal oxide semiconductors (AOSs) are promising alternatives to those based on amorphous silicon (a-Si:H) and low-temperature (<600 °C) poly-silicon (LTPS). However, solution-processed display-relevant indium-gallium-tin-oxide (IGZO) TFTs suffer from low carrier mobilities and/or inferior bias-stress stability versus their sputtered counterparts. Here we report that three types of environmentally benign carbohydrates (sorbitol, sucrose, and glucose) serve as especially efficient fuels for IGZO film combustion synthesis to yield high-performance TFTs. The results indicate that these carbohydrates assist the combustion process by lowering the ignition threshold temperature and, for optimal stoichiometries, enhancing the reaction enthalpy. IGZO TFT mobilities are increased to >8 cm(2) V(-1) s(-1) on SiO2/Si gate dielectrics with significantly improved bias-stress stability. The first correlations between precursor combustion enthalpy and a-MO densification/charge transport are established.

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Year:  2016        PMID: 27168054     DOI: 10.1021/jacs.6b02309

Source DB:  PubMed          Journal:  J Am Chem Soc        ISSN: 0002-7863            Impact factor:   15.419


  2 in total

1.  Experimental and theoretical evidence for hydrogen doping in polymer solution-processed indium gallium oxide.

Authors:  Wei Huang; Po-Hsiu Chien; Kyle McMillen; Sawankumar Patel; Joshua Tedesco; Li Zeng; Subhrangsu Mukherjee; Binghao Wang; Yao Chen; Gang Wang; Yang Wang; Yanshan Gao; Michael J Bedzyk; Dean M DeLongchamp; Yan-Yan Hu; Julia E Medvedeva; Tobin J Marks; Antonio Facchetti
Journal:  Proc Natl Acad Sci U S A       Date:  2020-07-23       Impact factor: 11.205

2.  Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel.

Authors:  Liuhui Lei; Yuanyuan Tan; Xing Yuan; Wei Dou; Jiale Zhang; Yongkang Wang; Sizhe Zeng; Shenyi Deng; Haoting Guo; Weichang Zhou; Dongsheng Tang
Journal:  RSC Adv       Date:  2021-05-18       Impact factor: 3.361

  2 in total

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