Literature DB >> 27159590

Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism.

Jaewoo Shim1, Hyo Seok Kim2, Yoon Su Shim2, Dong-Ho Kang1, Hyung-Youl Park1, Jaehyeong Lee1, Jaeho Jeon3, Seong Jun Jung3, Young Jae Song3, Woo-Shik Jung4, Jaeho Lee5, Seongjun Park5, Jeehwan Kim6, Sungjoo Lee3, Yong-Hoon Kim2, Jin-Hong Park1.   

Abstract

A WSe2 -based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 10(7) at 180 K (3 × 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Entities:  

Keywords:  WSe2; barristors; graphene; heterojunctions; trap-assisted tunneling

Year:  2016        PMID： 27159590     DOI： 10.1002/adma.201506004

Source DB:  PubMed          Journal:  Adv Mater        ISSN： 0935-9648            Impact factor:   30.849


  5 in total

1.  Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

Authors:  Jaewoo Shim; Seyong Oh; Dong-Ho Kang; Seo-Hyeon Jo; Muhammad Hasnain Ali; Woo-Young Choi; Keun Heo; Jaeho Jeon; Sungjoo Lee; Minwoo Kim; Young Jae Song; Jin-Hong Park
Journal:  Nat Commun       Date:  2016-11-07       Impact factor: 14.919

2.  Simulation of Figures of Merit for Barristor Based on Graphene/Insulator Junction.

Authors:  Jun-Ho Lee; Inchul Choi; Nae Bong Jeong; Minjeong Kim; Jaeho Yu; Sung Ho Jhang; Hyun-Jong Chung
Journal:  Nanomaterials (Basel)       Date:  2022-08-31       Impact factor: 5.719

3.  Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture.

Authors:  Zhongxun Guo; Yan Chen; Heng Zhang; Jianlu Wang; Weida Hu; Shijin Ding; David Wei Zhang; Peng Zhou; Wenzhong Bao
Journal:  Adv Sci (Weinh)       Date:  2018-08-02       Impact factor: 16.806

4.  Twist angle-dependent conductivities across MoS2/graphene heterojunctions.

Authors:  Mengzhou Liao; Ze-Wen Wu; Luojun Du; Tingting Zhang; Zheng Wei; Jianqi Zhu; Hua Yu; Jian Tang; Lin Gu; Yanxia Xing; Rong Yang; Dongxia Shi; Yugui Yao; Guangyu Zhang
Journal:  Nat Commun       Date:  2018-10-04       Impact factor: 14.919

5.  Electrolyte-Gated Vertical Synapse Array based on Van Der Waals Heterostructure for Parallel Computing.

Authors:  Seyong Oh; Ju-Hee Lee; Seunghwan Seo; Hyongsuk Choo; Dongyoung Lee; Jeong-Ick Cho; Jin-Hong Park
Journal:  Adv Sci (Weinh)       Date:  2021-12-26       Impact factor: 16.806
  5 in total

北京卡尤迪生物科技股份有限公司 © 2022-2023.