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Literature DB >> 27106134

A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.

Seo-Hyeon Jo¹, Dong-Ho Kang¹, Jaewoo Shim¹, Jaeho Jeon², Min Hwan Jeon², Gwangwe Yoo¹, Jinok Kim¹, Jaehyeong Lee¹, Geun Young Yeom², Sungjoo Lee², Hyun-Yong Yu³, Changhwan Choi⁴, Jin-Hong Park¹.

Abstract

The effects of triphenylphosphine (PPh3 )-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2 ) photodetector are systematically studied, and a very high performance WSe2 /h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 × 10(6) A W(-1) ) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.

Entities: Chemical Gene

Keywords: PPh3; WSe2; nondegenerate doping; photodetectors; type-converted FET

Year: 2016 PMID： 27106134 DOI： 10.1002/adma.201600032

Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849

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Cited

11 in total

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2. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe₂ and PdSe₂.

Authors: Amir Muhammad Afzal; Muhammad Zahir Iqbal; Ghulam Dastgeer; Aqrab Ul Ahmad; Byoungchoo Park
Journal: Adv Sci (Weinh) Date: 2021-03-16 Impact factor: 16.806

3. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

Authors: Jaewoo Shim; Seyong Oh; Dong-Ho Kang; Seo-Hyeon Jo; Muhammad Hasnain Ali; Woo-Young Choi; Keun Heo; Jaeho Jeon; Sungjoo Lee; Minwoo Kim; Young Jae Song; Jin-Hong Park
Journal: Nat Commun Date: 2016-11-07 Impact factor: 14.919

4. Artificial optic-neural synapse for colored and color-mixed pattern recognition.

Authors: Seunghwan Seo; Seo-Hyeon Jo; Sungho Kim; Jaewoo Shim; Seyong Oh; Jeong-Hoon Kim; Keun Heo; Jae-Woong Choi; Changhwan Choi; Saeroonter Oh; Duygu Kuzum; H-S Philip Wong; Jin-Hong Park
Journal: Nat Commun Date: 2018-11-30 Impact factor: 14.919

Review 5. Janus 2D materials via asymmetric molecular functionalization.

Authors: Verónica Montes-García; Paolo Samorì
Journal: Chem Sci Date: 2021-11-19 Impact factor: 9.825

6. A first-principles study of electronic structure and photocatalytic performance of GaN-MX₂ (M = Mo, W; X= S, Se) van der Waals heterostructures.

Authors: Fawad Khan; M Idrees; C Nguyen; Iftikhar Ahmad; Bin Amin
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7. Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment.

Authors: Seo-Hyeon Jo; Hae Won Lee; Jaewoo Shim; Keun Heo; Minwoo Kim; Young Jae Song; Jin-Hong Park
Journal: Adv Sci (Weinh) Date: 2018-01-18 Impact factor: 16.806

A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.

Review 1. A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices.

2. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe₂ and PdSe₂.

3. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

4. Artificial optic-neural synapse for colored and color-mixed pattern recognition.

Review 5. Janus 2D materials via asymmetric molecular functionalization.

6. A first-principles study of electronic structure and photocatalytic performance of GaN-MX₂ (M = Mo, W; X= S, Se) van der Waals heterostructures.

7. Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment.

8. Interface-Induced WSe₂ In-plane Homojunction for High-Performance Photodetection.

Review 9. 2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges.

Review 10. Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications.

A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.

Review 1. A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices.

2. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe2 and PdSe2.

3. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.

4. Artificial optic-neural synapse for colored and color-mixed pattern recognition.

Review 5. Janus 2D materials via asymmetric molecular functionalization.

6. A first-principles study of electronic structure and photocatalytic performance of GaN-MX2 (M = Mo, W; X= S, Se) van der Waals heterostructures.

7. Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment.

8. Interface-Induced WSe2 In-plane Homojunction for High-Performance Photodetection.

Review 9. 2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges.

Review 10. Recent Advances in Electrical Doping of 2D Semiconductor Materials: Methods, Analyses, and Applications.

Review 1. A review of molybdenum disulfide (MoS₂) based photodetectors: from ultra-broadband, self-powered to flexible devices.

2. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe₂ and PdSe₂.

6. A first-principles study of electronic structure and photocatalytic performance of GaN-MX₂ (M = Mo, W; X= S, Se) van der Waals heterostructures.

8. Interface-Induced WSe₂ In-plane Homojunction for High-Performance Photodetection.