| Literature DB >> 27066160 |
Elisabeth Wruss1, Oliver T Hofmann1, David A Egger1, Elisabeth Verwüster1, Alexander Gerlach2, Frank Schreiber2, Egbert Zojer1.
Abstract
Using density functional theory augmented with state-of-the-art van der Waals corrections, we studied the geometric and electronic properties of nonplanar chlorogallium-phthalocyanine GaClPc molecules adsorbed on Cu(111). Comparing these results with published experimental data for adsorption heights, we found indications for breaking of the metal-halogen bond when the molecule is heated during or after the deposition process. Interestingly, the work-function change induced by this dissociated geometry is the same as that computed for an intact adsorbate layer in the "Cl-down" configuration, with both agreeing well with the experimental photoemission data. This is unexpected, as the chemical natures of the adsorbates and the adsorption distances are markedly different in the two cases. The observation is explained as a consequence of Fermi-level pinning due to fractional charge transfer at the interface. Our results show that rationalizing the adsorption configurations on the basis of electronic interface properties alone can be ambiguous and that additional insight from dispersion-corrected DFT simulations is desirable.Entities:
Year: 2016 PMID: 27066160 PMCID: PMC4819946 DOI: 10.1021/acs.jpcc.6b00312
Source DB: PubMed Journal: J Phys Chem C Nanomater Interfaces ISSN: 1932-7447 Impact factor: 4.126
Figure 1Top and side views of the adsorption geometries of a GaClPc molecule on the Cu(111) surface. Adsorption in the (a) Cl-up, (b) Cl-down, and (c) Cl-diss geometries is shown. The molecular atomic species are depicted as follows: C, light blue; H, dark green; N, yellow; Ga, purple; Cl, light green. The unit cell is indicated by solid black lines.
Adsorption Heights (Å) of the Different Atomic Species of the GaClPc Molecule on Cu(111), as Obtained by Experiments (XSW)[12] and Simulations (DFT), for the (a) Cl-up, (b) Cl-down, and (c) Cl-diss Scenariosa
| (a) Cl-up | (b) Cl-down | (c) Cl-diss | ||||
|---|---|---|---|---|---|---|
| atom | XSW | DFT | XSW | DFT | XSW | DFT |
| C | 2.36(7) | 2.45 | 4.44(7) | 3.18 | 2.36(7) | 2.51 |
| N | 2.63(3) | 2.58 | 4.71(3) | 3.72 | 2.63(3) | 2.68 |
| Ga | 2.13(5) | 3.14 | 4.21(5) | 3.79 | 2.13(5) | 2.14 |
| Cl | 3.96(3) | 5.36 | 1.88(3) | 1.51 | 1.88(3) | 1.86 |
To better suit the different molecular configurations, the XSW results were interpreted differently for the three configurations by adding appropriate numbers of bulk lattice plane spacings [2.08 Å for Cu(111)[12]].[9,10]
Adsorption Energies (Eads) and van der Waals Contributions (Eads,vdW) per Molecule for GaClPc on the Cu(111) Surface in the (a) Cl-up, (b) Cl-down, and (c) Cl-diss Configurations
| configuration | ||
|---|---|---|
| (a) Cl-up | –4.72 | –6.47 |
| (b) Cl-down | –2.65 | –4.24 |
| (c) Cl-diss | –5.10 | –6.47 |
Note that the identical values of Eads,vdW for Cl-up and Cl-diss are a coincidence.
ΔΦ Values of the Cu(111) Surface upon Adsorption of GaClPc in Different Configurations, Including Contributions Originating from the Molecular Dipole (ΔΦdip) and the Bonding-Induced Dipole (ΔΦbond)a
| ΔΦ (eV) | ΔΦdip (eV) | ΔΦbond (eV) | |
|---|---|---|---|
| Cl-up | –0.37 | 0.23 | –0.58 |
| Cl-down | –0.58 | –0.26 | –0.30 |
| Cl-diss | –0.62 | –0.08 | –0.53 |
| experimental[ | |||
| before annealing | –0.34 | ||
| after annealing | –0.60 | ||
| Cl-down from ref ( | –0.55 | –0.30 | –0.25 |
The minimal deviations from eq arise from the asymmetry of the slab due to rearrangements of the top two Cu rows, which were neglected in the derivation of ΔΦbond.
To avoid effects of spurious charge transfer in the Cl-diss case between the GaPc molecule and the Cl atom, these two fragments were calculated separately (see SI for details).
Figure 2PBE-calculated densities of states projected onto the adsorbed GaClPc layer for the (a) Cl-up, (b) Cl-down, and (c) Cl-diss configurations. The energy is aligned to the Fermi energy, which is indicated by a dotted line. The blue region indicates the filled states. The PDOSs were obtained on the basis of fully optimized geometries.