| Literature DB >> 27038143 |
Yuan Liu1, Jiming Sheng1, Hao Wu1, Qiyuan He2, Hung-Chieh Cheng1, Muhammad Imran Shakir3, Yu Huang1, Xiangfeng Duan2.
Abstract
Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures.Entities:
Keywords: graphene; graphene-silicon junctions; high current density; tunneling transistors; vertical transistors
Year: 2016 PMID： 27038143 DOI： 10.1002/adma.201506173
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849