| Literature DB >> 27002478 |
Yongsuk Choi1,2, Junmo Kang2, Deep Jariwala2, Moon Sung Kang3, Tobin J Marks2,4, Mark C Hersam2,4,5, Jeong Ho Cho1,2,6.
Abstract
Low-voltage complementary circuits comprising n-type and p-type van der Waals heterojunction vertical field-effect transistors (VFETs) are demonstrated. The resulting VFETs possess high on-state current densities (>3000 A cm(-2) ) and on/off current ratios (>10(4) ) in a narrow voltage window (<3 V).Entities:
Keywords: Schottky barrier; graphene; ion gels; low power; transition-metal dichalcogenides; vertical transistors
Year: 2016 PMID: 27002478 DOI: 10.1002/adma.201506450
Source DB: PubMed Journal: Adv Mater ISSN: 0935-9648 Impact factor: 30.849