| Literature DB >> 26833783 |
Angada B Sachid1,2, Mahmut Tosun1,2,3, Sujay B Desai1,2,3, Ching-Yi Hsu1,4, Der-Hsien Lien1,2,5, Surabhi R Madhvapathy1,2, Yu-Ze Chen6, Mark Hettick1,2,7, Jeong Seuk Kang1,2, Yuping Zeng1, Jr-Hau He5, Edward Yi Chang4, Yu-Lun Chueh6, Ali Javey1,2,3,7, Chenming Hu1.
Abstract
Monolithic 3D integrated circuits using transition metal dichalcogenide materials and low-temperature processing are reported. A variety of digital and analog circuits are implemented on two sequentially integrated layers of devices. Inverter circuit operation at an ultralow supply voltage of 150 mV is achieved, paving the way to high-density, ultralow-voltage, and ultralow-power applications.Keywords: metal oxide semiconductors; monolithic 3D integration; transition metal dichalcogenides; ultra-low voltage operation
Year: 2016 PMID： 26833783 DOI： 10.1002/adma.201505113
Source DB: PubMed Journal: Adv Mater ISSN： 0935-9648 Impact factor: 30.849