Literature DB >> 26727201

Single-spin CCD.

T A Baart1, M Shafiei1, T Fujita1, C Reichl2, W Wegscheider2, L M K Vandersypen1.   

Abstract

Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision. In its ultimate limit, information is stored in the spin state of a single electron, at which point quantum information processing also becomes a possibility. Here, we demonstrate the manipulation, transport and readout of individual electron spins in a linear array of three semiconductor quantum dots. First, we demonstrate single-shot readout of three spins with fidelities of 97% on average, using an approach analogous to the operation of a charge-coupled device (CCD). Next, we perform site-selective control of the three spins, thereby writing the content of each pixel of this 'single-spin charge-coupled device'. Finally, we show that shuttling an electron back and forth in the array hundreds of times, covering a cumulative distance of 80 μm, has negligible influence on its spin projection. Extrapolating these results to the case of much larger arrays points at a diverse range of potential applications, from quantum information to imaging and sensing.

Entities:  

Year:  2016        PMID: 26727201     DOI: 10.1038/nnano.2015.291

Source DB:  PubMed          Journal:  Nat Nanotechnol        ISSN: 1748-3387            Impact factor:   39.213


  20 in total

1.  Architecture for a large-scale ion-trap quantum computer.

Authors:  D Kielpinski; C Monroe; D J Wineland
Journal:  Nature       Date:  2002-06-13       Impact factor: 49.962

2.  On-demand single-electron transfer between distant quantum dots.

Authors:  R P G McNeil; M Kataoka; C J B Ford; C H W Barnes; D Anderson; G A C Jones; I Farrer; D A Ritchie
Journal:  Nature       Date:  2011-09-21       Impact factor: 49.962

3.  Nondestructive real-time measurement of charge and spin dynamics of photoelectrons in a double quantum dot.

Authors:  T Fujita; H Kiyama; K Morimoto; S Teraoka; G Allison; A Ludwig; A D Wieck; A Oiwa; S Tarucha
Journal:  Phys Rev Lett       Date:  2013-06-25       Impact factor: 9.161

4.  Simultaneous spin-charge relaxation in double quantum dots.

Authors:  V Srinivasa; K C Nowack; M Shafiei; L M K Vandersypen; J M Taylor
Journal:  Phys Rev Lett       Date:  2013-05-08       Impact factor: 9.161

5.  Coherent manipulation of single spins in semiconductors.

Authors:  Ronald Hanson; David D Awschalom
Journal:  Nature       Date:  2008-06-19       Impact factor: 49.962

6.  Tunable spin loading and T1 of a silicon spin qubit measured by single-shot readout.

Authors:  C B Simmons; J R Prance; B J Van Bael; Teck Seng Koh; Zhan Shi; D E Savage; M G Lagally; R Joynt; Mark Friesen; S N Coppersmith; M A Eriksson
Journal:  Phys Rev Lett       Date:  2011-04-11       Impact factor: 9.161

7.  An addressable quantum dot qubit with fault-tolerant control-fidelity.

Authors:  M Veldhorst; J C C Hwang; C H Yang; A W Leenstra; B de Ronde; J P Dehollain; J T Muhonen; F E Hudson; K M Itoh; A Morello; A S Dzurak
Journal:  Nat Nanotechnol       Date:  2014-10-12       Impact factor: 39.213

8.  Spin-relaxation anisotropy in a GaAs quantum dot.

Authors:  P Scarlino; E Kawakami; P Stano; M Shafiei; C Reichl; W Wegscheider; L M K Vandersypen
Journal:  Phys Rev Lett       Date:  2014-12-19       Impact factor: 9.161

9.  Current rectification by Pauli exclusion in a weakly coupled double quantum dot system.

Authors:  K Ono; D G Austing; Y Tokura; S Tarucha
Journal:  Science       Date:  2002-07-25       Impact factor: 47.728

10.  Single-shot read-out of an individual electron spin in a quantum dot.

Authors:  J M Elzerman; R Hanson; L H Willems Van Beveren; B Witkamp; L M K Vandersypen; L P Kouwenhoven
Journal:  Nature       Date:  2004-07-22       Impact factor: 49.962

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  22 in total

1.  Quantum simulation of a Fermi-Hubbard model using a semiconductor quantum dot array.

Authors:  T Hensgens; T Fujita; L Janssen; Xiao Li; C J Van Diepen; C Reichl; W Wegscheider; S Das Sarma; L M K Vandersypen
Journal:  Nature       Date:  2017-08-02       Impact factor: 49.962

2.  Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet.

Authors:  Erika Kawakami; Thibaut Jullien; Pasquale Scarlino; Daniel R Ward; Donald E Savage; Max G Lagally; Viatcheslav V Dobrovitski; Mark Friesen; Susan N Coppersmith; Mark A Eriksson; Lieven M K Vandersypen
Journal:  Proc Natl Acad Sci U S A       Date:  2016-10-03       Impact factor: 11.205

3.  Coherent spin-exchange via a quantum mediator.

Authors:  Timothy Alexander Baart; Takafumi Fujita; Christian Reichl; Werner Wegscheider; Lieven Mark Koenraad Vandersypen
Journal:  Nat Nanotechnol       Date:  2016-10-10       Impact factor: 39.213

4.  Fast spin information transfer between distant quantum dots using individual electrons.

Authors:  B Bertrand; S Hermelin; S Takada; M Yamamoto; S Tarucha; A Ludwig; A D Wieck; C Bäuerle; T Meunier
Journal:  Nat Nanotechnol       Date:  2016-05-30       Impact factor: 39.213

5.  A coherent spin-photon interface in silicon.

Authors:  X Mi; M Benito; S Putz; D M Zajac; J M Taylor; Guido Burkard; J R Petta
Journal:  Nature       Date:  2018-02-14       Impact factor: 49.962

6.  Coherent spin-state transfer via Heisenberg exchange.

Authors:  Yadav P Kandel; Haifeng Qiao; Saeed Fallahi; Geoffrey C Gardner; Michael J Manfra; John M Nichol
Journal:  Nature       Date:  2019-09-25       Impact factor: 69.504

7.  Coherent spin qubit transport in silicon.

Authors:  J Yoneda; W Huang; M Feng; C H Yang; K W Chan; T Tanttu; W Gilbert; R C C Leon; F E Hudson; K M Itoh; A Morello; S D Bartlett; A Laucht; A Saraiva; A S Dzurak
Journal:  Nat Commun       Date:  2021-07-05       Impact factor: 14.919

8.  Coherent long-distance displacement of individual electron spins.

Authors:  H Flentje; P-A Mortemousque; R Thalineau; A Ludwig; A D Wieck; C Bäuerle; T Meunier
Journal:  Nat Commun       Date:  2017-09-11       Impact factor: 14.919

9.  Silicon CMOS architecture for a spin-based quantum computer.

Authors:  M Veldhorst; H G J Eenink; C H Yang; A S Dzurak
Journal:  Nat Commun       Date:  2017-12-15       Impact factor: 14.919

10.  Atomically engineered electron spin lifetimes of 30 s in silicon.

Authors:  Thomas F Watson; Bent Weber; Yu-Ling Hsueh; Lloyd L C Hollenberg; Rajib Rahman; Michelle Y Simmons
Journal:  Sci Adv       Date:  2017-03-31       Impact factor: 14.136

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