Literature DB >> 23705734

Simultaneous spin-charge relaxation in double quantum dots.

V Srinivasa1, K C Nowack, M Shafiei, L M K Vandersypen, J M Taylor.   

Abstract

We investigate phonon-induced spin and charge relaxation mediated by spin-orbit and hyperfine interactions for a single electron confined within a double quantum dot. A simple toy model incorporating both direct decay to the ground state of the double dot and indirect decay via an intermediate excited state yields an electron spin relaxation rate that varies nonmonotonically with the detuning between the dots. We confirm this model with experiments performed on a GaAs double dot, demonstrating that the relaxation rate exhibits the expected detuning dependence and can be electrically tuned over several orders of magnitude. Our analysis suggests that spin-orbit mediated relaxation via phonons serves as the dominant mechanism through which the double-dot electron spin-flip rate varies with detuning.

Year:  2013        PMID: 23705734     DOI: 10.1103/PhysRevLett.110.196803

Source DB:  PubMed          Journal:  Phys Rev Lett        ISSN: 0031-9007            Impact factor:   9.161


  6 in total

1.  A programmable two-qubit quantum processor in silicon.

Authors:  T F Watson; S G J Philips; E Kawakami; D R Ward; P Scarlino; M Veldhorst; D E Savage; M G Lagally; Mark Friesen; S N Coppersmith; M A Eriksson; L M K Vandersypen
Journal:  Nature       Date:  2018-02-14       Impact factor: 49.962

2.  Single-spin CCD.

Authors:  T A Baart; M Shafiei; T Fujita; C Reichl; W Wegscheider; L M K Vandersypen
Journal:  Nat Nanotechnol       Date:  2016-01-04       Impact factor: 39.213

3.  Readout and control of the spin-orbit states of two coupled acceptor atoms in a silicon transistor.

Authors:  Joost van der Heijden; Takashi Kobayashi; Matthew G House; Joe Salfi; Sylvain Barraud; Romain Laviéville; Michelle Y Simmons; Sven Rogge
Journal:  Sci Adv       Date:  2018-12-07       Impact factor: 14.136

4.  Shuttling a single charge across a one-dimensional array of silicon quantum dots.

Authors:  A R Mills; D M Zajac; M J Gullans; F J Schupp; T M Hazard; J R Petta
Journal:  Nat Commun       Date:  2019-03-05       Impact factor: 14.919

5.  Toward high-fidelity coherent electron spin transport in a GaAs double quantum dot.

Authors:  Xinyu Zhao; Xuedong Hu
Journal:  Sci Rep       Date:  2018-09-18       Impact factor: 4.379

6.  Coherent spin control of s-, p-, d- and f-electrons in a silicon quantum dot.

Authors:  R C C Leon; C H Yang; J C C Hwang; J Camirand Lemyre; T Tanttu; W Huang; K W Chan; K Y Tan; F E Hudson; K M Itoh; A Morello; A Laucht; M Pioro-Ladrière; A Saraiva; A S Dzurak
Journal:  Nat Commun       Date:  2020-02-11       Impact factor: 14.919

  6 in total

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